DE3855444D1 - Programmierbarer Halbleiterspeicher - Google Patents

Programmierbarer Halbleiterspeicher

Info

Publication number
DE3855444D1
DE3855444D1 DE3855444T DE3855444T DE3855444D1 DE 3855444 D1 DE3855444 D1 DE 3855444D1 DE 3855444 T DE3855444 T DE 3855444T DE 3855444 T DE3855444 T DE 3855444T DE 3855444 D1 DE3855444 D1 DE 3855444D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
programmable semiconductor
programmable
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3855444T
Other languages
English (en)
Other versions
DE3855444T2 (de
Inventor
Fujio C O Patent Divis Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3855444D1 publication Critical patent/DE3855444D1/de
Application granted granted Critical
Publication of DE3855444T2 publication Critical patent/DE3855444T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE19883855444 1988-10-24 1988-10-24 Programmierbarer Halbleiterspeicher Expired - Lifetime DE3855444T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88309995A EP0365721B1 (de) 1988-10-24 1988-10-24 Programmierbarer Halbleiterspeicher

Publications (2)

Publication Number Publication Date
DE3855444D1 true DE3855444D1 (de) 1996-08-29
DE3855444T2 DE3855444T2 (de) 1996-12-19

Family

ID=8200259

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883855444 Expired - Lifetime DE3855444T2 (de) 1988-10-24 1988-10-24 Programmierbarer Halbleiterspeicher

Country Status (2)

Country Link
EP (1) EP0365721B1 (de)
DE (1) DE3855444T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5544103A (en) * 1992-03-03 1996-08-06 Xicor, Inc. Compact page-erasable eeprom non-volatile memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437174A (en) * 1981-01-19 1984-03-13 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
US4485349A (en) * 1983-04-08 1984-11-27 Varian Associates, Inc. Stabilized microwave power amplifier system
US4648074A (en) * 1984-06-29 1987-03-03 Rca Corporation Reference circuit with semiconductor memory array
JP2647101B2 (ja) * 1987-11-17 1997-08-27 株式会社東芝 不揮発性半導体メモリ装置

Also Published As

Publication number Publication date
EP0365721B1 (de) 1996-07-24
EP0365721A1 (de) 1990-05-02
DE3855444T2 (de) 1996-12-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)