DE3851195D1 - Verfahren für die chemische Dampfabscheidung. - Google Patents

Verfahren für die chemische Dampfabscheidung.

Info

Publication number
DE3851195D1
DE3851195D1 DE3851195T DE3851195T DE3851195D1 DE 3851195 D1 DE3851195 D1 DE 3851195D1 DE 3851195 T DE3851195 T DE 3851195T DE 3851195 T DE3851195 T DE 3851195T DE 3851195 D1 DE3851195 D1 DE 3851195D1
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
deposition processes
processes
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3851195T
Other languages
English (en)
Other versions
DE3851195T2 (de
Inventor
Takafumi Kimura
Hideki Yamawaki
Kazuto Ikeda
Masaru Ihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3851195D1 publication Critical patent/DE3851195D1/de
Publication of DE3851195T2 publication Critical patent/DE3851195T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE3851195T 1987-10-09 1988-10-06 Verfahren für die chemische Dampfabscheidung. Expired - Fee Related DE3851195T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25567787 1987-10-09
JP63087629A JPH01212220A (ja) 1987-10-09 1988-04-08 超伝導材料の気相成長方法

Publications (2)

Publication Number Publication Date
DE3851195D1 true DE3851195D1 (de) 1994-09-29
DE3851195T2 DE3851195T2 (de) 1994-12-15

Family

ID=26428879

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3851195T Expired - Fee Related DE3851195T2 (de) 1987-10-09 1988-10-06 Verfahren für die chemische Dampfabscheidung.

Country Status (4)

Country Link
US (1) US4931425A (de)
EP (1) EP0311401B1 (de)
JP (1) JPH01212220A (de)
DE (1) DE3851195T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988010499A1 (en) * 1987-06-16 1988-12-29 Kawasaki Steel Corporation Process for forming thin film of oxide superconductor
US5185317A (en) * 1988-02-19 1993-02-09 Northwestern University Method of forming superconducting Tl-Ba-Ca-Cu-O films
JPH01235103A (ja) * 1988-03-15 1989-09-20 Toray Ind Inc 超伝導材
JPH02150040A (ja) * 1988-11-30 1990-06-08 Fujitsu Ltd 気相成長装置
US5198411A (en) * 1988-12-02 1993-03-30 Hewlett-Packard Company Chemical vapor phase method for forming thin films of high temperature oxide superconductors
US5252548A (en) * 1989-06-09 1993-10-12 Oki Electric Industry Co., Ltd. Method of forming an oxide superconductor/semiconductor junction
US5108983A (en) * 1989-11-21 1992-04-28 Georgia Tech Research Corporation Method for the rapid deposition with low vapor pressure reactants by chemical vapor deposition
EP0450394A3 (de) * 1990-03-20 1991-10-23 Fujitsu Limited Verfahren und Vorrichtung zur Herstellung von supraleitenden Schichten
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US7323581B1 (en) 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5362328A (en) * 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
CA2053549A1 (en) * 1990-11-15 1992-05-16 John A. Agostinelli Construction of high temperature josephson junction device
CA2158568C (en) * 1993-03-24 2001-12-04 Andrew T. Hunt Method and apparatus for the combustion chemical vapor deposition of films and coatings
US5858465A (en) * 1993-03-24 1999-01-12 Georgia Tech Research Corporation Combustion chemical vapor deposition of phosphate films and coatings
US6689422B1 (en) * 1994-02-16 2004-02-10 Howmet Research Corporation CVD codeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating
US5989733A (en) * 1996-07-23 1999-11-23 Howmet Research Corporation Active element modified platinum aluminide diffusion coating and CVD coating method
NZ502030A (en) 1997-06-18 2002-12-20 Massachusetts Inst Technology Controlled conversion of metal oxyfluorides into superconducting oxides
US6214473B1 (en) 1998-05-13 2001-04-10 Andrew Tye Hunt Corrosion-resistant multilayer coatings
US20030130129A1 (en) * 2001-07-13 2003-07-10 Massachusetts Institute Of Technology Vacuum processing for fabrication of superconducting films fabricated by metal-organic processing
US10233541B2 (en) * 2012-06-29 2019-03-19 Applied Materials, Inc. Deposition of films containing alkaline earth metals
CN104947084A (zh) * 2015-07-09 2015-09-30 成都点石创想科技有限公司 一种在导电金属基底上制备超导材料的方法
US20230002906A1 (en) * 2021-07-01 2023-01-05 Mellanox Technologies, Ltd. Continuous-feed chemical vapor deposition system
CN115369387A (zh) * 2021-05-18 2022-11-22 迈络思科技有限公司 连续进给化学气相沉积系统
US11963309B2 (en) 2021-05-18 2024-04-16 Mellanox Technologies, Ltd. Process for laminating conductive-lubricant coated metals for printed circuit boards
US12004308B2 (en) 2021-05-18 2024-06-04 Mellanox Technologies, Ltd. Process for laminating graphene-coated printed circuit boards

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982049A (en) * 1969-06-16 1976-09-21 Rockwell International Corporation Method for producing single crystal films
DE3440590A1 (de) * 1984-11-07 1986-05-07 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Verfahren zur herstellung von supraleitenden faserbuendeln
JPS63225528A (ja) * 1987-03-13 1988-09-20 Toa Nenryo Kogyo Kk 超伝導性複合酸化物の製造方法
JPH0753638B2 (ja) * 1987-03-30 1995-06-07 住友電気工業株式会社 超電導薄膜の形成方法
JPS63274027A (ja) * 1987-05-01 1988-11-11 Sumitomo Electric Ind Ltd 超電導材料の製造方法

Also Published As

Publication number Publication date
EP0311401A3 (en) 1990-12-05
DE3851195T2 (de) 1994-12-15
JPH01212220A (ja) 1989-08-25
EP0311401A2 (de) 1989-04-12
US4931425A (en) 1990-06-05
EP0311401B1 (de) 1994-08-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee