DE3807710C2 - - Google Patents
Info
- Publication number
- DE3807710C2 DE3807710C2 DE19883807710 DE3807710A DE3807710C2 DE 3807710 C2 DE3807710 C2 DE 3807710C2 DE 19883807710 DE19883807710 DE 19883807710 DE 3807710 A DE3807710 A DE 3807710A DE 3807710 C2 DE3807710 C2 DE 3807710C2
- Authority
- DE
- Germany
- Prior art keywords
- tube
- substrates
- longitudinal edges
- profiles
- tray according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 238000009826 distribution Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Packaging Frangible Articles (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19883807710 DE3807710A1 (de) | 1988-03-09 | 1988-03-09 | Traegerhorde |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19883807710 DE3807710A1 (de) | 1988-03-09 | 1988-03-09 | Traegerhorde |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3807710A1 DE3807710A1 (de) | 1989-09-21 |
| DE3807710C2 true DE3807710C2 (enrdf_load_stackoverflow) | 1991-06-27 |
Family
ID=6349240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19883807710 Granted DE3807710A1 (de) | 1988-03-09 | 1988-03-09 | Traegerhorde |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3807710A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007063017A1 (de) * | 2007-12-21 | 2009-06-25 | Von Ardenne Anlagentechnik Gmbh | Substrathalterung für Gasdiffusionsöfen |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2732224B2 (ja) * | 1994-09-30 | 1998-03-25 | 信越半導体株式会社 | ウエーハ支持ボート |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2558041C3 (de) * | 1975-12-22 | 1979-01-04 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Transport von Halbleiterscheiben durch ein Temperaturbehandlungsrohr |
| DE3419866C2 (de) * | 1984-05-28 | 1986-06-26 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Trägerhorde aus Quarzglas für scheibenförmige Substrate |
-
1988
- 1988-03-09 DE DE19883807710 patent/DE3807710A1/de active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007063017A1 (de) * | 2007-12-21 | 2009-06-25 | Von Ardenne Anlagentechnik Gmbh | Substrathalterung für Gasdiffusionsöfen |
| DE102007063017B4 (de) * | 2007-12-21 | 2012-03-01 | Von Ardenne Anlagentechnik Gmbh | Substrathalterung für Gasdiffusionsöfen |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3807710A1 (de) | 1989-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2133877A1 (de) | Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben | |
| DE3721636A1 (de) | Quarzglasreaktor fuer mocvd-anlagen | |
| DE2133876A1 (de) | Anordnung zum eindiffundieren von dotierstoffen | |
| DE3916975A1 (de) | Geraetetraeger | |
| WO1997039475A2 (de) | Anlage zur nassbehandlung von substraten | |
| DE69912519T2 (de) | Ofen zur kontinuierlichen Wärmebehandlung von Glascontainern | |
| EP0166032B1 (de) | Trägerhorde aus Quarzglas für scheibenförmige Substrate | |
| DE3441887C1 (de) | Ofen fuer die Waermebehandlung von Halbleiter-Substraten | |
| DE3807710C2 (enrdf_load_stackoverflow) | ||
| DE1539794A1 (de) | Brennstoffanordnung fuer einen fluessigmetallgekuehlten Kernreaktor | |
| DE3024751C2 (de) | Trägerhorde aus Quarzglas | |
| EP0232477B1 (de) | Verfahren zum Zonenglühen eines metallischen Werkstücks | |
| DE3235359C1 (de) | Verfahren zur Herstellung monokristalliner Schaufeln | |
| DE3829159C2 (enrdf_load_stackoverflow) | ||
| DE3634935C2 (enrdf_load_stackoverflow) | ||
| DE19859468C2 (de) | Vorrichtung zum Behandeln und Handhaben von Substraten | |
| EP0467230B1 (de) | Kalt-Schmelz-Tiegel | |
| DE10135574B4 (de) | Verfahren und Vorrichtung zur Fertigung von Schichtstrukturen auf Substraten mittels Flüssigphasenepitaxie | |
| DE3840588C1 (en) | Quartz glass container for the thermal treatment of semiconductor wafers | |
| DE3612375C2 (enrdf_load_stackoverflow) | ||
| DE1036815B (de) | Apparat zum fraktionierten Abtrennen von in einer Loesung enthaltenen Stoffen durch Ausfrieren | |
| DE622552C (de) | Verfahren und Vorrichtung zum Reinigen von Bierwuerze waehrend der Kuehlung | |
| DE1794065C3 (de) | Vorrichtung zum Abscheiden von Halbleitermaterial | |
| DE2924214A1 (de) | Maische fuer die behandlung einer fuellmasse in der zuckerindustrie | |
| DE8302957U1 (de) | Vorrichtung zur Hitzebehandlung von Halbleitersubstraten und dergleichen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8127 | New person/name/address of the applicant |
Owner name: HERAEUS QUARZGLAS GMBH, 6450 HANAU, DE |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |