DE3788294T2 - Verfahren und Gerät zur Filmherstellung. - Google Patents

Verfahren und Gerät zur Filmherstellung.

Info

Publication number
DE3788294T2
DE3788294T2 DE87301539T DE3788294T DE3788294T2 DE 3788294 T2 DE3788294 T2 DE 3788294T2 DE 87301539 T DE87301539 T DE 87301539T DE 3788294 T DE3788294 T DE 3788294T DE 3788294 T2 DE3788294 T2 DE 3788294T2
Authority
DE
Germany
Prior art keywords
film
mask
ion beam
edge
specific part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87301539T
Other languages
German (de)
English (en)
Other versions
DE3788294D1 (de
Inventor
Takashi Kaito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of DE3788294D1 publication Critical patent/DE3788294D1/de
Application granted granted Critical
Publication of DE3788294T2 publication Critical patent/DE3788294T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Chemical Vapour Deposition (AREA)
DE87301539T 1986-02-24 1987-02-23 Verfahren und Gerät zur Filmherstellung. Expired - Fee Related DE3788294T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61038628A JPS62195662A (ja) 1986-02-24 1986-02-24 マスクリペア方法及び装置

Publications (2)

Publication Number Publication Date
DE3788294D1 DE3788294D1 (de) 1994-01-13
DE3788294T2 true DE3788294T2 (de) 1994-03-31

Family

ID=12530501

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87301539T Expired - Fee Related DE3788294T2 (de) 1986-02-24 1987-02-23 Verfahren und Gerät zur Filmherstellung.

Country Status (4)

Country Link
US (1) US4950498A (cg-RX-API-DMAC7.html)
EP (1) EP0237220B1 (cg-RX-API-DMAC7.html)
JP (1) JPS62195662A (cg-RX-API-DMAC7.html)
DE (1) DE3788294T2 (cg-RX-API-DMAC7.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273849A (en) * 1987-11-09 1993-12-28 At&T Bell Laboratories Mask repair
JPH01154064A (ja) * 1987-12-10 1989-06-16 Fujitsu Ltd 微細パターンの形成方法
US5283087A (en) * 1988-02-05 1994-02-01 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
JPH03124463U (cg-RX-API-DMAC7.html) * 1990-03-28 1991-12-17
GB2258083A (en) * 1991-07-25 1993-01-27 Kratos Analytical Ltd Sample analysis apparatus and method.
US5235154A (en) * 1992-04-28 1993-08-10 International Business Machines Corporation Laser removal of metal interconnects
US5397607A (en) * 1994-05-17 1995-03-14 International Business Machines Corporation Input/output (I/O) thin film repair process
WO1996000803A1 (en) * 1994-06-28 1996-01-11 Fei Company Charged particle deposition of electrically insulating films
US5506080A (en) * 1995-01-23 1996-04-09 Internation Business Machines Corp. Lithographic mask repair and fabrication method
JP3523405B2 (ja) 1996-01-26 2004-04-26 株式会社日立製作所 荷電ビーム処理によるパターン形成方法及び荷電ビーム処理装置
US6838380B2 (en) * 2001-01-26 2005-01-04 Fei Company Fabrication of high resistivity structures using focused ion beams
US20050109278A1 (en) * 2003-11-26 2005-05-26 Ted Liang Method to locally protect extreme ultraviolet multilayer blanks used for lithography
US20080206952A1 (en) * 2004-09-30 2008-08-28 Seiichi Nagata Silicon Substrate Processing Method
US8013300B2 (en) * 2008-06-20 2011-09-06 Carl Zeiss Nts, Llc Sample decontamination
US8617668B2 (en) * 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
CN105990102A (zh) * 2015-02-02 2016-10-05 中芯国际集成电路制造(上海)有限公司 一种对掩膜进行处理的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341592A (en) * 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
JPS55150226A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting pattern
JPS56114950A (en) * 1980-02-18 1981-09-09 Chiyou Lsi Gijutsu Kenkyu Kumiai Method for correcting mask pattern defect
JPS586127A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd フオトマスク欠陥修正方法とその装置
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS5862642A (ja) * 1981-10-09 1983-04-14 Kiyoshi Oguchi 電子線感応ネガ型レジスト
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
US4489102A (en) * 1983-04-04 1984-12-18 At&T Technologies, Inc. Radiation-stimulated deposition of aluminum
JPS6018726A (ja) * 1983-07-11 1985-01-30 Ishida Scales Mfg Co Ltd 電子秤
JPS6059738A (ja) * 1983-09-13 1985-04-06 Matsushita Electronics Corp 半導体装置の製造方法
JPS6086830A (ja) * 1983-10-19 1985-05-16 Hoya Corp フオトマスクのパタ−ン修正方法
JPS6094728A (ja) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd 荷電粒子ビームを用いた加工方法およびその装置
JPH0712033B2 (ja) * 1984-05-10 1995-02-08 工業技術院長 イオンビ−ムによる微細パタ−ン形成法
JPS60254729A (ja) * 1984-05-31 1985-12-16 Toppan Printing Co Ltd マスク基板上のマスクパタ−ンの修正方法

Also Published As

Publication number Publication date
JPS62195662A (ja) 1987-08-28
DE3788294D1 (de) 1994-01-13
US4950498A (en) 1990-08-21
JPS6362733B2 (cg-RX-API-DMAC7.html) 1988-12-05
EP0237220B1 (en) 1993-12-01
EP0237220A3 (en) 1989-04-19
EP0237220A2 (en) 1987-09-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee