DE3780889D1 - Roentgenstrahldurchlaessige membran und herstellungsverfahren. - Google Patents

Roentgenstrahldurchlaessige membran und herstellungsverfahren.

Info

Publication number
DE3780889D1
DE3780889D1 DE8787113715T DE3780889T DE3780889D1 DE 3780889 D1 DE3780889 D1 DE 3780889D1 DE 8787113715 T DE8787113715 T DE 8787113715T DE 3780889 T DE3780889 T DE 3780889T DE 3780889 D1 DE3780889 D1 DE 3780889D1
Authority
DE
Germany
Prior art keywords
production method
ray transmitting
transmitting membrane
membrane
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787113715T
Other languages
English (en)
Other versions
DE3780889T2 (de
Inventor
Masafumi Nakaishi
Masao Maison De Nobless Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61219781A external-priority patent/JPS6375700A/ja
Priority claimed from JP61219217A external-priority patent/JPS63164214A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3780889D1 publication Critical patent/DE3780889D1/de
Publication of DE3780889T2 publication Critical patent/DE3780889T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE8787113715T 1986-09-19 1987-09-18 Roentgenstrahldurchlaessige membran und herstellungsverfahren. Expired - Fee Related DE3780889T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61219781A JPS6375700A (ja) 1986-09-19 1986-09-19 Ｘ線マスク
JP61219217A JPS63164214A (ja) 1986-09-19 1986-09-19 Ｘ線マスクの製造方法

Publications (2)

Publication Number Publication Date
DE3780889D1 true DE3780889D1 (de) 1992-09-10
DE3780889T2 DE3780889T2 (de) 1993-03-18

Family

ID=26522986

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787113715T Expired - Fee Related DE3780889T2 (de) 1986-09-19 1987-09-18 Roentgenstrahldurchlaessige membran und herstellungsverfahren.

Country Status (3)

Country Link
US (1) US4820546A (de)
EP (1) EP0260718B1 (de)
DE (1) DE3780889T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3042127B2 (ja) * 1991-09-02 2000-05-15 富士電機株式会社 酸化シリコン膜の製造方法および製造装置
JPH07111244A (ja) * 1993-10-13 1995-04-25 Mitsubishi Electric Corp 気相結晶成長装置
US5509041A (en) * 1994-06-30 1996-04-16 Motorola, Inc. X-ray lithography method for irradiating an object to form a pattern thereon
DE19753624A1 (de) * 1997-12-03 1999-06-10 Fraunhofer Ges Forschung Verschleiß- und reibungsmindernde Schicht, mit Substrat mit dieser Schicht sowie Verfahren zum Herstellen einer solchen Schicht

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
JPS6054671B2 (ja) * 1979-01-31 1985-11-30 超エル・エス・アイ技術研究組合 露光用マスク
JPS6167857A (ja) * 1984-09-12 1986-04-08 Shuzo Hattori Ｘ線リソグラフイ−用のマスク基板の製造法
JPS6253786A (ja) * 1985-09-03 1987-03-09 Asahi Chem Ind Co Ltd 純水または超純水の製造方法

Also Published As

Publication number Publication date
EP0260718A3 (en) 1989-04-26
DE3780889T2 (de) 1993-03-18
EP0260718A2 (de) 1988-03-23
US4820546A (en) 1989-04-11
EP0260718B1 (de) 1992-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee