DE3771945D1 - Verfahren und vorrichtung zur infrarotabsorptionsmessung der konzentration von mikrokristallinen fehlern in einem silizium-wafer zur herstellung eines halbleiterelementes. - Google Patents

Verfahren und vorrichtung zur infrarotabsorptionsmessung der konzentration von mikrokristallinen fehlern in einem silizium-wafer zur herstellung eines halbleiterelementes.

Info

Publication number
DE3771945D1
DE3771945D1 DE8787102401T DE3771945T DE3771945D1 DE 3771945 D1 DE3771945 D1 DE 3771945D1 DE 8787102401 T DE8787102401 T DE 8787102401T DE 3771945 T DE3771945 T DE 3771945T DE 3771945 D1 DE3771945 D1 DE 3771945D1
Authority
DE
Germany
Prior art keywords
microcristalline
errors
concentration
producing
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787102401T
Other languages
English (en)
Inventor
Atsuko Kubota
Yoshiaki Matsushita
Yoshiaki Ohwada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3771945D1 publication Critical patent/DE3771945D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N2021/3595—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using FTIR
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE8787102401T 1986-02-25 1987-02-20 Verfahren und vorrichtung zur infrarotabsorptionsmessung der konzentration von mikrokristallinen fehlern in einem silizium-wafer zur herstellung eines halbleiterelementes. Expired - Lifetime DE3771945D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61038265A JPS62197743A (ja) 1986-02-25 1986-02-25 赤外吸収測定装置

Publications (1)

Publication Number Publication Date
DE3771945D1 true DE3771945D1 (de) 1991-09-12

Family

ID=12520489

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787102401T Expired - Lifetime DE3771945D1 (de) 1986-02-25 1987-02-20 Verfahren und vorrichtung zur infrarotabsorptionsmessung der konzentration von mikrokristallinen fehlern in einem silizium-wafer zur herstellung eines halbleiterelementes.

Country Status (4)

Country Link
US (1) US4862000A (de)
EP (1) EP0250707B1 (de)
JP (1) JPS62197743A (de)
DE (1) DE3771945D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066599A (en) * 1989-07-27 1991-11-19 Fujitsu Limited Silicon crystal oxygen evaluation method using fourier transform infrared spectroscopy (ftir) and semiconductor device fabrication method using the same
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration
US5702973A (en) * 1990-04-05 1997-12-30 Seh America, Inc. Method for forming epitaxial semiconductor wafer for CMOS integrated circuits
JPH07105424B2 (ja) * 1991-07-23 1995-11-13 信越半導体株式会社 シリコンウェーハの表面の結合状態及び不純物の評価方法
US5386118A (en) * 1992-05-11 1995-01-31 Shin-Etsu Handotai Co., Ltd. Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal
US5444246A (en) * 1992-09-30 1995-08-22 Shin-Etsu Handotai Co., Ltd. Determining carbon concentration in silicon single crystal by FT-IR
US5595916A (en) * 1993-03-29 1997-01-21 Fujitsu Limited Silicon oxide film evaluation method
JPH10509276A (ja) * 1993-04-28 1998-09-08 エス・イー・エイチ・アメリカ，アイ・エヌ・シー Ｃｍｏｓ集積回路用のエピタキシャル半導体ウエーハ
US5550374A (en) * 1994-05-12 1996-08-27 Memc Electronic Materials, Inc. Methods and apparatus for determining interstitial oxygen content of relatively large diameter silicon crystals by infrared spectroscopy
US20050090641A1 (en) * 2001-10-02 2005-04-28 Regina Valluzzi Self-assembling polymers, and materials fabricated therefrom
DE102007029666B4 (de) 2007-06-27 2011-03-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Bearbeiten eines Substrats
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
US8318239B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus for detecting and passivating defects in thin film solar cells
US8318240B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement
TWI715039B (zh) 2014-06-03 2021-01-01 荷蘭商Ａｓｍｌ荷蘭公司 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法
CN108693141A (zh) * 2018-01-25 2018-10-23 上海大学 激光与红外复合的无损检测设备及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251080A1 (de) * 1972-10-18 1974-05-02 Max Planck Gesellschaft Michelson-interferometer
JPS5694243A (en) * 1979-12-28 1981-07-30 Fujitsu Ltd Observing method for impurity in semiconductor
US4429047A (en) * 1981-08-28 1984-01-31 Rca Corporation Method for determining oxygen content in semiconductor material
US4590574A (en) * 1983-04-29 1986-05-20 International Business Machines Corp. Method for determining oxygen and carbon in silicon semiconductor wafer having rough surface
JPS6117031A (ja) * 1984-07-03 1986-01-25 Nec Corp シリコン結晶中の格子間酸素濃度測定方法及び測定装置
JPS6417031A (en) * 1987-07-10 1989-01-20 Olympus Optical Co Shutter driving device
JPH06117031A (ja) * 1992-10-06 1994-04-26 Toshiba Corp 住宅の構造材

Also Published As

Publication number Publication date
JPH0449904B2 (de) 1992-08-12
US4862000A (en) 1989-08-29
JPS62197743A (ja) 1987-09-01
EP0250707B1 (de) 1991-08-07
EP0250707A3 (en) 1988-08-03
EP0250707A2 (de) 1988-01-07

Similar Documents

Publication Publication Date Title
DE3771945D1 (de) Verfahren und vorrichtung zur infrarotabsorptionsmessung der konzentration von mikrokristallinen fehlern in einem silizium-wafer zur herstellung eines halbleiterelementes.
DE3679250D1 (de) Verfahren und vorrichtung zur optischen fehlerbestimmung in einem halbleitermaterial.
DE3787397D1 (de) Verfahren zur Messung der Konzentrationen von Unreinheiten in einer Flüssigkeit und Vorrichtung dazu.
DE3781654D1 (de) Verfahren und vorrichtung zur ketonmessung.
DE3785475D1 (de) Verfahren und vorrichtung zur passiven abstandsmessung.
DE3769224D1 (de) Verfahren und vorrichtung zum festlegen der spalttiefe von in mengen angefertigten magnetischen duennfilm-wandlern.
DE69106222D1 (de) Vorrichtung zur kontinuierlichen Fehlermessung von Werkstückformen und Messverfahren zur Anwendung der Vorrichtung.
DE3853778D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements.
DE3872932D1 (de) Geraet und verfahren zur detektion oberflaechenfehler.
DE58906265D1 (de) Verfahren und vorrichtung zur messung der absorption von strahlung in einem gewebe.
DE69124843D1 (de) Verfahren und Vorrichtung zur Messung von Radwinkeln
DE58904662D1 (de) Verfahren und vorrichtung zur glanzmessung.
DE3768562D1 (de) Verfahren und vorrichtung zur dimensionsmessung eines objektes.
DE69025438D1 (de) Verfahren zur Auswertung eines Siliziumkristalls und Verfahren zur Herstellung einer Halbleitervorrichtung mit Verwendung desselben
DE3854893D1 (de) Verfahren und Vorrichtung zum Abschrägen der Kerbe eines Halbleiterplättchen
DE69031712D1 (de) Verfahren zur Herstellung eines Halbleiterbauelementes
DE3789372D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements.
DE3783022D1 (de) Verfahren zur messung von gitterfehlstellen in einem halbleiter.
DE69032074D1 (de) Verfahren zur Herstellung eines Halbleiterbauteils
DE59207869D1 (de) Verfahren und Vorrichtung zur Messung der Konzentration von in einem Gas befindlichen Partikeln
DE3675138D1 (de) Verfahren und vorrichtung zur messung der absorptionsdifferenzspektren von radikalreaktionen.
DE69011619D1 (de) Verfahren und Vorrichtung zur Einstellung der Sauerstoff-Konzentration in einem Silizium-Einkristall.
ATA108787A (de) Verfahren und vorrichtung zur messung des anteiles von nicht kondensierbaren gasen in dämpfen
DE3776016D1 (de) Verfahren und vorrichtung zur messung der groesse von teilchen in einem gas.
ATA429683A (de) Messeinrichtung zur bestimmung der konzentration von halogeniden und pseudohalogeniden, sowie verfahren zur herstellung eines sensorelementes fuer eine derartige einrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee