DE3770569D1 - Verfahren zur herstellung einer p+nn+-diode und eines diese diode umfassenden bipolaren transistors unter verwendung des neutralisierungseffektes von atomarem wasserstoff auf donatoratomen. - Google Patents

Verfahren zur herstellung einer p+nn+-diode und eines diese diode umfassenden bipolaren transistors unter verwendung des neutralisierungseffektes von atomarem wasserstoff auf donatoratomen.

Info

Publication number
DE3770569D1
DE3770569D1 DE8787402202T DE3770569T DE3770569D1 DE 3770569 D1 DE3770569 D1 DE 3770569D1 DE 8787402202 T DE8787402202 T DE 8787402202T DE 3770569 T DE3770569 T DE 3770569T DE 3770569 D1 DE3770569 D1 DE 3770569D1
Authority
DE
Germany
Prior art keywords
diode
donator
atoms
producing
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787402202T
Other languages
English (en)
Inventor
Andrei Mircea
Jacques Chevallier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Etat Francais
Original Assignee
Centre National de la Recherche Scientifique CNRS
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Etat Francais filed Critical Centre National de la Recherche Scientifique CNRS
Application granted granted Critical
Publication of DE3770569D1 publication Critical patent/DE3770569D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8787402202T 1986-10-06 1987-10-05 Verfahren zur herstellung einer p+nn+-diode und eines diese diode umfassenden bipolaren transistors unter verwendung des neutralisierungseffektes von atomarem wasserstoff auf donatoratomen. Expired - Lifetime DE3770569D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8613885A FR2604828B1 (fr) 1986-10-06 1986-10-06 Procede de fabrication d'une diode p+nn+ et d'un transistor bipolaire comportant cette diode, utilisant l'effet de neutralisation des atomes donneurs par l'hydrogene atomique

Publications (1)

Publication Number Publication Date
DE3770569D1 true DE3770569D1 (de) 1991-07-11

Family

ID=9339576

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787402202T Expired - Lifetime DE3770569D1 (de) 1986-10-06 1987-10-05 Verfahren zur herstellung einer p+nn+-diode und eines diese diode umfassenden bipolaren transistors unter verwendung des neutralisierungseffektes von atomarem wasserstoff auf donatoratomen.

Country Status (5)

Country Link
US (1) US4936781A (de)
EP (1) EP0263755B1 (de)
JP (1) JPS63148624A (de)
DE (1) DE3770569D1 (de)
FR (1) FR2604828B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093280A (en) * 1987-10-13 1992-03-03 Northrop Corporation Refractory metal ohmic contacts and method
FR2635611B1 (fr) * 1988-08-18 1990-10-19 Centre Nat Rech Scient Procede de neutralisation des atomes accepteurs dans inp de type p
US5179029A (en) * 1990-02-07 1993-01-12 At&T Bell Laboratories Hydrogen plasma passivation of GaAs
JPH06151801A (ja) * 1992-11-13 1994-05-31 Canon Inc 光電変換装置及び光電変換装置の製造方法
US5362657A (en) * 1992-11-25 1994-11-08 Texas Instruments Incorporated Lateral complementary heterojunction bipolar transistor and processing procedure
US5872387A (en) * 1996-01-16 1999-02-16 The Board Of Trustees Of The University Of Illinois Deuterium-treated semiconductor devices
US5744202A (en) * 1996-09-30 1998-04-28 Xerox Corporation Enhancement of hydrogenation of materials encapsulated by an oxide

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315782A (en) * 1980-07-21 1982-02-16 Rca Corporation Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions
DE3047870A1 (de) * 1980-12-18 1982-07-15 Siemens AG, 1000 Berlin und 8000 München "pn-diode und verfahren zu deren herstellung"
FR2517883A1 (fr) * 1981-12-09 1983-06-10 Thomson Csf Dispositif semi-conducteur a faible capacite parasite muni de connexions externes prises au moyen de poutres
US4728616A (en) * 1982-09-17 1988-03-01 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4584028A (en) * 1984-09-24 1986-04-22 Rca Corporation Neutralization of acceptor levels in silicon by atomic hydrogen
JPH0744182B2 (ja) * 1984-11-09 1995-05-15 株式会社日立製作所 ヘテロ接合バイポ−ラ・トランジスタ
US4610731A (en) * 1985-04-03 1986-09-09 At&T Bell Laboratories Shallow impurity neutralization
JPH0797589B2 (ja) * 1986-06-26 1995-10-18 ソニー株式会社 ヘテロ接合型バイポ−ラトランジスタの製造方法

Also Published As

Publication number Publication date
US4936781A (en) 1990-06-26
FR2604828A1 (fr) 1988-04-08
EP0263755A1 (de) 1988-04-13
JPS63148624A (ja) 1988-06-21
FR2604828B1 (fr) 1988-12-23
EP0263755B1 (de) 1991-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee