DE3770286D1 - Sonnenbatterie. - Google Patents

Sonnenbatterie.

Info

Publication number
DE3770286D1
DE3770286D1 DE8787100410T DE3770286T DE3770286D1 DE 3770286 D1 DE3770286 D1 DE 3770286D1 DE 8787100410 T DE8787100410 T DE 8787100410T DE 3770286 T DE3770286 T DE 3770286T DE 3770286 D1 DE3770286 D1 DE 3770286D1
Authority
DE
Germany
Prior art keywords
sun battery
sun
battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787100410T
Other languages
German (de)
English (en)
Inventor
Kazuseu C O Fuji Electri Itoga
Takeshige C O Fuji El Ichimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Energy and Industrial Technology Development Organization
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Application granted granted Critical
Publication of DE3770286D1 publication Critical patent/DE3770286D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
DE8787100410T 1986-02-25 1987-01-14 Sonnenbatterie. Expired - Lifetime DE3770286D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61039788A JPS62198169A (ja) 1986-02-25 1986-02-25 太陽電池

Publications (1)

Publication Number Publication Date
DE3770286D1 true DE3770286D1 (de) 1991-07-04

Family

ID=12562680

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787100410T Expired - Lifetime DE3770286D1 (de) 1986-02-25 1987-01-14 Sonnenbatterie.

Country Status (4)

Country Link
US (1) US4900370A (enrdf_load_stackoverflow)
EP (1) EP0234222B1 (enrdf_load_stackoverflow)
JP (1) JPS62198169A (enrdf_load_stackoverflow)
DE (1) DE3770286D1 (enrdf_load_stackoverflow)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62211966A (ja) * 1986-03-12 1987-09-17 Nippon Sheet Glass Co Ltd 透明導電膜付き基板
JPH07112076B2 (ja) * 1987-05-07 1995-11-29 日本板硝子株式会社 二層構造を有する透明導電膜体
US5102721A (en) * 1987-08-31 1992-04-07 Solarex Corporation Textured tin oxide
EP0364780B1 (en) * 1988-09-30 1997-03-12 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Solar cell with a transparent electrode
JPH02210715A (ja) * 1989-02-08 1990-08-22 Nippon Sheet Glass Co Ltd 二層構造を有する透明導電基体
US5136351A (en) * 1990-03-30 1992-08-04 Sharp Kabushiki Kaisha Photovoltaic device with porous metal layer
JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
US5212395A (en) * 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
FR2694451B1 (fr) * 1992-07-29 1994-09-30 Asulab Sa Cellule photovoltaïque.
JP2713847B2 (ja) * 1992-12-28 1998-02-16 キヤノン株式会社 薄膜太陽電池
DE69635107D1 (de) * 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
KR100446591B1 (ko) * 1997-02-17 2005-05-16 삼성전자주식회사 태양전지용실리콘박막및그제조방법
US6602606B1 (en) * 1999-05-18 2003-08-05 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
US6380480B1 (en) * 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
JP2001060708A (ja) * 1999-06-18 2001-03-06 Nippon Sheet Glass Co Ltd 透明積層体およびこれを用いたガラス物品
JP4389585B2 (ja) 2001-10-19 2009-12-24 旭硝子株式会社 透明導電性酸化物膜付き基体および光電変換素子
JP4233455B2 (ja) * 2001-12-03 2009-03-04 日本板硝子株式会社 薄膜形成方法
JP2009239301A (ja) * 2001-12-03 2009-10-15 Nippon Sheet Glass Co Ltd 基板およびそれを用いた光電変換装置
KR20080074086A (ko) * 2005-11-17 2008-08-12 아사히 가라스 가부시키가이샤 태양 전지용 투명 도전성 기판 및 그 제조 방법
US7538405B2 (en) * 2006-01-13 2009-05-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor sensor using surface plasmons to increase energy absorption efficiency
WO2007096565A2 (fr) * 2006-02-22 2007-08-30 Saint-Gobain Glass France Dispositif electroluminescent organique et utilisation d'une couche electroconductrice transparente dans un dispositif electroluminescent organique
FR2897745A1 (fr) * 2006-02-22 2007-08-24 Saint Gobain Dispositif electroluminescent et utilisation d'une couche electroconductrice transparente dans un dispostif electroluminescent
FR2915834B1 (fr) * 2007-05-04 2009-12-18 Saint Gobain Substrat transparent muni d'une couche electrode perfectionnee
EP2232570A2 (en) * 2007-12-19 2010-09-29 Oerlikon Trading AG, Trübbach Method for obtaining high performance thin film devices deposited on highly textured substrates
WO2010016468A1 (ja) * 2008-08-05 2010-02-11 旭硝子株式会社 透明導電膜基板およびこの基板を用いた太陽電池
DE102009051345B4 (de) * 2009-10-30 2013-07-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer transparenten Elektrode
JP5659551B2 (ja) * 2010-04-28 2015-01-28 ソニー株式会社 透明導電性素子、入力装置、および表示装置
KR101886745B1 (ko) * 2011-03-29 2018-08-08 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
US11251316B2 (en) 2017-06-05 2022-02-15 University Of South Carolina Photovoltaic cell energy harvesting for fluorescent lights
TWI735247B (zh) * 2020-06-03 2021-08-01 凌巨科技股份有限公司 薄膜太陽能電池的前電極層及其製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0070509B2 (en) * 1981-07-17 1993-05-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor and amorphous silicon photovoltaic device
JPS58204572A (ja) * 1982-05-24 1983-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS5994472A (ja) * 1982-11-20 1984-05-31 Semiconductor Energy Lab Co Ltd 光電変換半導体装置の作製方法
GB2139421B (en) * 1983-03-07 1987-09-23 Semiconductor Energy Lab Semiconductor photoelectric conversion device and method of manufacture
JPS60154521A (ja) * 1984-01-23 1985-08-14 Semiconductor Energy Lab Co Ltd 炭化珪素被膜作製方法
JPS60240166A (ja) * 1984-05-14 1985-11-29 Taiyo Yuden Co Ltd 非晶質シリコン太陽電池及びその製造方法

Also Published As

Publication number Publication date
JPH0577192B2 (enrdf_load_stackoverflow) 1993-10-26
EP0234222B1 (en) 1991-05-29
JPS62198169A (ja) 1987-09-01
EP0234222A2 (en) 1987-09-02
EP0234222A3 (en) 1989-04-26
US4900370A (en) 1990-02-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

8328 Change in the person/name/address of the agent

Free format text: POPP, E., DIPL.-ING.DIPL.-WIRTSCH.-ING.DR.RER.POL. SAJDA, W., DIPL.-PHYS., 80538 MUENCHEN BOLTE, E., DIPL.-ING., 28209 BREMEN REINLAENDER, C., DIPL.-ING. DR.-ING., 80538 MUENCHEN BOHNENBERGER, J., DIPL.-ING.DR.PHIL.NAT., 8000 MUENCHEN MOELLER, F., DIPL.-ING., PAT.-ANWAELTE, 28209 BREMEN

8339 Ceased/non-payment of the annual fee