DE3751755D1 - Verfahren und Vorrichtung zum Abscheiden aus der Gasphase - Google Patents
Verfahren und Vorrichtung zum Abscheiden aus der GasphaseInfo
- Publication number
- DE3751755D1 DE3751755D1 DE3751755T DE3751755T DE3751755D1 DE 3751755 D1 DE3751755 D1 DE 3751755D1 DE 3751755 T DE3751755 T DE 3751755T DE 3751755 T DE3751755 T DE 3751755T DE 3751755 D1 DE3751755 D1 DE 3751755D1
- Authority
- DE
- Germany
- Prior art keywords
- gas phase
- phase separation
- separation
- gas
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/101—Liquid Source Chemical Depostion, i.e. LSCVD or Aerosol Chemical Vapor Deposition, i.e. ACVD
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61152921A JPS6311668A (ja) | 1986-06-30 | 1986-06-30 | Cvd法 |
JP61170335A JP2526039B2 (ja) | 1986-07-18 | 1986-07-18 | Cvd法 |
JP17028086A JPS6326368A (ja) | 1986-07-19 | 1986-07-19 | Cvd法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3751755D1 true DE3751755D1 (de) | 1996-05-02 |
DE3751755T2 DE3751755T2 (de) | 1997-04-03 |
Family
ID=27320372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3751755T Expired - Fee Related DE3751755T2 (de) | 1986-06-30 | 1987-06-30 | Verfahren und Vorrichtung zum Abscheiden aus der Gasphase |
Country Status (3)
Country | Link |
---|---|
US (1) | US4994301A (de) |
EP (1) | EP0251764B1 (de) |
DE (1) | DE3751755T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008026000B4 (de) * | 2008-05-29 | 2012-03-22 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur Beschichtung flächiger Substrate |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3772659D1 (de) * | 1986-06-28 | 1991-10-10 | Ulvac Corp | Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik. |
US4800105A (en) * | 1986-07-22 | 1989-01-24 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of forming a thin film by chemical vapor deposition |
DD274830A1 (de) * | 1988-08-12 | 1990-01-03 | Elektromat Veb | Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken |
US5356661A (en) * | 1990-11-21 | 1994-10-18 | Sumitomo Electric Industries, Ltd. | Heat transfer insulated parts and manufacturing method thereof |
US5681394A (en) * | 1991-06-26 | 1997-10-28 | Canon Kabushiki Kaisha | Photo-excited processing apparatus and method for manufacturing a semiconductor device by using the same |
JP2763222B2 (ja) * | 1991-12-13 | 1998-06-11 | 三菱電機株式会社 | 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置 |
US5370739A (en) * | 1992-06-15 | 1994-12-06 | Materials Research Corporation | Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD |
US5434110A (en) * | 1992-06-15 | 1995-07-18 | Materials Research Corporation | Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates |
US5534072A (en) * | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
JPH0624896A (ja) * | 1992-07-09 | 1994-02-01 | Sumitomo Electric Ind Ltd | ダイヤモンド合成方法 |
US5187120A (en) * | 1992-08-24 | 1993-02-16 | Hewlett-Packard Company | Selective deposition of metal on metal nitride to form interconnect |
US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
US5753303A (en) * | 1996-04-30 | 1998-05-19 | International Business Machines Corporation | Process for the elimination of tungsten oxidation with inert gas stabilization in chemical vapor deposition processes |
US6383330B1 (en) | 1999-09-10 | 2002-05-07 | Asm America, Inc. | Quartz wafer processing chamber |
KR100332313B1 (ko) * | 2000-06-24 | 2002-04-12 | 서성기 | Ald 박막증착장치 및 증착방법 |
US6660606B2 (en) * | 2000-09-29 | 2003-12-09 | Canon Kabushiki Kaisha | Semiconductor-on-insulator annealing method |
JP2002110564A (ja) * | 2000-10-02 | 2002-04-12 | Japan Pionics Co Ltd | 気相成長装置及び気相成長方法 |
WO2002044437A2 (en) * | 2000-11-02 | 2002-06-06 | Composite Tool Company, Inc. | High strength alloys and methods for making same |
JP4133209B2 (ja) * | 2002-10-22 | 2008-08-13 | 株式会社神戸製鋼所 | 高圧処理装置 |
US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
JP2011501409A (ja) * | 2007-10-10 | 2011-01-06 | イザ,マイケル | 化学蒸着反応チャンバ |
US8628616B2 (en) * | 2007-12-11 | 2014-01-14 | Sumitomo Electric Industries, Ltd. | Vapor-phase process apparatus, vapor-phase process method, and substrate |
JP5432686B2 (ja) * | 2009-12-03 | 2014-03-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9512520B2 (en) * | 2011-04-25 | 2016-12-06 | Applied Materials, Inc. | Semiconductor substrate processing system |
US9499905B2 (en) * | 2011-07-22 | 2016-11-22 | Applied Materials, Inc. | Methods and apparatus for the deposition of materials on a substrate |
DE102011054566A1 (de) * | 2011-10-18 | 2013-04-18 | Aixtron Se | Vorrichtung und Verfahren zum Abscheiden mehrkomponentiger Schichten, insbesondere metallorganischer Halbleiterschichten |
WO2014103727A1 (ja) * | 2012-12-27 | 2014-07-03 | 昭和電工株式会社 | SiC膜成膜装置およびSiC膜の製造方法 |
WO2014103728A1 (ja) * | 2012-12-27 | 2014-07-03 | 昭和電工株式会社 | 成膜装置 |
JP2018133471A (ja) * | 2017-02-16 | 2018-08-23 | 漢民科技股▲分▼有限公司 | 気相成膜装置 |
CN115261823B (zh) * | 2022-08-26 | 2023-09-08 | 北京北方华创微电子装备有限公司 | 工艺腔室的进气装置、半导体工艺设备及半导体加工工艺 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3404998A (en) * | 1965-05-18 | 1968-10-08 | Union Carbide Corp | Method of metal plating aluminum alloys |
GB1099490A (en) * | 1965-11-01 | 1968-01-17 | Martin James | Improvements relating to vehicle ejection seats |
US3794516A (en) * | 1970-12-15 | 1974-02-26 | W Engeler | Method for making high temperature low ohmic contact to silicon |
US3697342A (en) * | 1970-12-16 | 1972-10-10 | Ibm | Method of selective chemical vapor deposition |
US3697343A (en) * | 1970-12-16 | 1972-10-10 | Ibm | Method of selective chemical vapor deposition |
JPS5120267B2 (de) * | 1972-05-13 | 1976-06-23 | ||
US3900646A (en) * | 1973-02-21 | 1975-08-19 | Robert A Clyde | Method of plating metal uniformly on and throughout porous structures |
GB1507996A (en) * | 1975-06-11 | 1978-04-19 | Pilkington Brothers Ltd | Coating glass |
US4215156A (en) * | 1977-08-26 | 1980-07-29 | International Business Machines Corporation | Method for fabricating tantalum semiconductor contacts |
US4191794A (en) * | 1978-05-11 | 1980-03-04 | Westinghouse Electric Corp. | Integrated solar cell array |
US4401689A (en) * | 1980-01-31 | 1983-08-30 | Rca Corporation | Radiation heated reactor process for chemical vapor deposition on substrates |
US4404235A (en) * | 1981-02-23 | 1983-09-13 | Rca Corporation | Method for improving adhesion of metal film on a dielectric surface |
JPS5948952B2 (ja) * | 1981-03-23 | 1984-11-29 | 富士通株式会社 | 金属薄膜の形成方法 |
US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
US4435445A (en) * | 1982-05-13 | 1984-03-06 | Energy Conversion Devices, Inc. | Photo-assisted CVD |
US4565157A (en) * | 1983-03-29 | 1986-01-21 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
FR2548218B1 (fr) * | 1983-06-29 | 1987-03-06 | Pauleau Yves | Procede de depot de couches minces par reaction chimique en phase gazeuse utilisant deux rayonnements differents |
JPS6042823A (ja) * | 1983-08-19 | 1985-03-07 | Toshiba Corp | 薄膜形成方法 |
US4504526A (en) * | 1983-09-26 | 1985-03-12 | Libbey-Owens-Ford Company | Apparatus and method for producing a laminar flow of constant velocity fluid along a substrate |
JPS60166032A (ja) * | 1984-02-09 | 1985-08-29 | Mitsubishi Electric Corp | 光化学反応による膜形成装置 |
US4629635A (en) * | 1984-03-16 | 1986-12-16 | Genus, Inc. | Process for depositing a low resistivity tungsten silicon composite film on a substrate |
US4543270A (en) * | 1984-06-20 | 1985-09-24 | Gould Inc. | Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser |
JPH0642456B2 (ja) * | 1984-11-21 | 1994-06-01 | 株式会社日立製作所 | 表面光処理方法 |
WO1986006755A1 (en) * | 1985-05-10 | 1986-11-20 | General Electric Company | Selective chemical vapor deposition method and apparatus |
US4741928A (en) * | 1985-12-27 | 1988-05-03 | General Electric Company | Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces |
DE3772659D1 (de) * | 1986-06-28 | 1991-10-10 | Ulvac Corp | Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik. |
US4849260A (en) * | 1986-06-30 | 1989-07-18 | Nihon Sinku Gijutsu Kabushiki Kaisha | Method for selectively depositing metal on a substrate |
US4800105A (en) * | 1986-07-22 | 1989-01-24 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of forming a thin film by chemical vapor deposition |
-
1987
- 1987-06-30 US US07/068,644 patent/US4994301A/en not_active Expired - Fee Related
- 1987-06-30 DE DE3751755T patent/DE3751755T2/de not_active Expired - Fee Related
- 1987-06-30 EP EP87305783A patent/EP0251764B1/de not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008026000B4 (de) * | 2008-05-29 | 2012-03-22 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur Beschichtung flächiger Substrate |
Also Published As
Publication number | Publication date |
---|---|
US4994301A (en) | 1991-02-19 |
DE3751755T2 (de) | 1997-04-03 |
EP0251764A3 (en) | 1988-08-17 |
EP0251764A2 (de) | 1988-01-07 |
EP0251764B1 (de) | 1996-03-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de | ||
8370 | Indication of lapse of patent is to be deleted | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |