DE3751127T2 - Herstellung von permeabelen polymeren Filmen oder Schichten durch Auslaugung. - Google Patents
Herstellung von permeabelen polymeren Filmen oder Schichten durch Auslaugung.Info
- Publication number
- DE3751127T2 DE3751127T2 DE3751127T DE3751127T DE3751127T2 DE 3751127 T2 DE3751127 T2 DE 3751127T2 DE 3751127 T DE3751127 T DE 3751127T DE 3751127 T DE3751127 T DE 3751127T DE 3751127 T2 DE3751127 T2 DE 3751127T2
- Authority
- DE
- Germany
- Prior art keywords
- resist
- film
- extractable
- resist film
- polymeric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87760686A | 1986-06-23 | 1986-06-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3751127D1 DE3751127D1 (de) | 1995-04-13 |
| DE3751127T2 true DE3751127T2 (de) | 1995-09-14 |
Family
ID=25370314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3751127T Expired - Fee Related DE3751127T2 (de) | 1986-06-23 | 1987-04-28 | Herstellung von permeabelen polymeren Filmen oder Schichten durch Auslaugung. |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0250762B1 (enExample) |
| JP (1) | JPS638643A (enExample) |
| DE (1) | DE3751127T2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0269746A (ja) * | 1988-08-01 | 1990-03-08 | Internatl Business Mach Corp <Ibm> | ホトレジストの形成方法、ポリマー構造体、ホトレジスト |
| JPH02161432A (ja) * | 1988-12-14 | 1990-06-21 | Nec Corp | 微細パターン形成方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4198236A (en) * | 1974-01-21 | 1980-04-15 | E. I. Du Pont De Nemours And Company | Method for preparation of lithographic printing plate having addition polymerized areas and binder areas |
| EP0014943A1 (en) * | 1979-02-16 | 1980-09-03 | Ardyth Dale Lakes | Process for producing self-metering liquid retentive pad and other porous articles of manufacture |
| US4552833A (en) * | 1984-05-14 | 1985-11-12 | International Business Machines Corporation | Radiation sensitive and oxygen plasma developable resist |
| GB8427149D0 (en) * | 1984-10-26 | 1984-12-05 | Ucb Sa | Resist materials |
| US4613398A (en) * | 1985-06-06 | 1986-09-23 | International Business Machines Corporation | Formation of etch-resistant resists through preferential permeation |
| DE3764702D1 (de) * | 1986-04-24 | 1990-10-11 | Ibm | Zwei-schichten-photolack-verfahren mit deckschicht. |
-
1987
- 1987-04-28 EP EP87106181A patent/EP0250762B1/en not_active Expired - Lifetime
- 1987-04-28 DE DE3751127T patent/DE3751127T2/de not_active Expired - Fee Related
- 1987-05-08 JP JP62110910A patent/JPS638643A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0462661B2 (enExample) | 1992-10-07 |
| DE3751127D1 (de) | 1995-04-13 |
| EP0250762B1 (en) | 1995-03-08 |
| EP0250762A3 (en) | 1988-10-05 |
| EP0250762A2 (en) | 1988-01-07 |
| JPS638643A (ja) | 1988-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3689179T2 (de) | Verfahren zur Herstellung von ätzresistenten Schutzlacken durch bevorzugtes Eindringen. | |
| DE69127792T2 (de) | Verfahren zur Herstellung eines Musters in einer Schicht | |
| DE10019282B4 (de) | Verfahren zur Erzeugung einer feinen Struktur in einem Halbleitersubstrat und Resistzusammensetzung hierfür | |
| DE68925244T2 (de) | Verfahren zur Herstellung von Fotolackstrukturen unter Verwendung eines chemisch verstärkten und metallisierten Materials | |
| EP0395917B1 (de) | Photostrukturierungsverfahren | |
| EP0292821A2 (de) | Verfahren zur Bildumkehr von normalerweise positiv arbeitenden Photoresistmaterialien | |
| EP0394741A2 (de) | Ätzresistentes deep-UV-resist system | |
| DE68926143T2 (de) | Struktur zur Aufbringung eines Metallisationsmusters darauf und Verfahren zur Bildung einer solchen Struktur | |
| DE10361257B4 (de) | Verfahren zur Herstellung von feinen Mustern | |
| DE2950212C2 (de) | Photovernetzbares Polymer für die Herstellung von Resiststrukturen mit kurzwelligem UV-Licht und Verfahren zur Herstellung einer Maske mit einem photovernetzbaren Polymer | |
| DE69405955T2 (de) | Resistmaterial und Verfahren zur Herstellung von Bildstrukturen | |
| EP0124265A2 (en) | Process for forming pattern with negative resist | |
| DE2459156A1 (de) | Verfahren zum herstellen einer photolackmaske auf einem halbleitersubstrat | |
| EP0492256A1 (de) | Photolithographische Strukturerzeugung | |
| DE10339717A1 (de) | Mikrostrukturbildender Stoff und Verfahren zum Ausbilden einer feinen Struktur | |
| DE1797255A1 (de) | Verfahren zum Verhindern des Schaeumens bei der Herstellung von Photoresistmustern | |
| DE69120842T2 (de) | Photolackzusammensetzung und Strukturierungsmethode | |
| DE3337315A1 (de) | Zweifach-lichtempfindliche zusammensetzungen und verfahren zur erzeugung bildmustergemaesser photoresistschichten | |
| DE4410505A1 (de) | Verfahren zum Herstellen eines Reliefbildes im Submikrometerbereich | |
| DE69130594T2 (de) | Verfahren zur Erzeugung eines Musters | |
| DE3112196A1 (de) | "photosensitive zusammensetzung zur trockenentwicklung" | |
| EP0453610B1 (de) | Verfahren zur Erzeugung einer Resiststruktur | |
| EP0394740B1 (de) | Trockenentwickelbares Resistsystem | |
| EP0760971B1 (de) | Trockenentwickelbarer positivresist | |
| EP0186798B1 (en) | Top imaged plasma developable resists |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |