DE3679110D1 - Verfahren zur herstellung eines halbleiterlasers mit sperrschichten zur erreichung einer strombegrenzung. - Google Patents

Verfahren zur herstellung eines halbleiterlasers mit sperrschichten zur erreichung einer strombegrenzung.

Info

Publication number
DE3679110D1
DE3679110D1 DE8686401019T DE3679110T DE3679110D1 DE 3679110 D1 DE3679110 D1 DE 3679110D1 DE 8686401019 T DE8686401019 T DE 8686401019T DE 3679110 T DE3679110 T DE 3679110T DE 3679110 D1 DE3679110 D1 DE 3679110D1
Authority
DE
Germany
Prior art keywords
barriers
reaching
producing
semiconductor laser
current limit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686401019T
Other languages
English (en)
Inventor
Pascal Devoldere
Marc Gilleron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3679110D1 publication Critical patent/DE3679110D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8686401019T 1985-05-13 1986-05-13 Verfahren zur herstellung eines halbleiterlasers mit sperrschichten zur erreichung einer strombegrenzung. Expired - Lifetime DE3679110D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8507210A FR2581801B1 (fr) 1985-05-13 1985-05-13 Procede de realisation de lasers a semiconducteurs a jonctions bloquantes assurant un confinement electrique

Publications (1)

Publication Number Publication Date
DE3679110D1 true DE3679110D1 (de) 1991-06-13

Family

ID=9319212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686401019T Expired - Lifetime DE3679110D1 (de) 1985-05-13 1986-05-13 Verfahren zur herstellung eines halbleiterlasers mit sperrschichten zur erreichung einer strombegrenzung.

Country Status (3)

Country Link
EP (1) EP0206851B1 (de)
DE (1) DE3679110D1 (de)
FR (1) FR2581801B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8603009A (nl) * 1986-11-27 1988-06-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
JPH02503047A (ja) * 1987-04-16 1990-09-20 シーメンス、アクチエンゲゼルシヤフト 埋め込まれた活性層と側方に対する電流閉じ込め構造とを備えたレーザダイオードとその製造方法
EP0473443B1 (de) * 1990-08-30 1999-03-24 Sharp Kabushiki Kaisha Halbleiterlaser mit vergrabener Streifenstruktur
CN109510062B (zh) * 2018-12-28 2024-07-26 全磊光电股份有限公司 掩埋dfb激光器及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2440616A1 (fr) * 1978-10-31 1980-05-30 Bouley Jean Claude Laser a injection a double heterostructure a profil d'indice de refraction
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device
FR2465337A1 (fr) * 1979-09-11 1981-03-20 Landreau Jean Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede
US4429397A (en) * 1980-06-26 1984-01-31 Nippon Electric Co., Ltd. Buried heterostructure laser diode
EP0083697B1 (de) * 1981-10-19 1987-09-09 Nec Corporation Zweikanaliger Planar-vergrabene-Heterostruktur-Laser

Also Published As

Publication number Publication date
EP0206851A1 (de) 1986-12-30
FR2581801B1 (fr) 1987-06-26
FR2581801A1 (fr) 1986-11-14
EP0206851B1 (de) 1991-05-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee