DE3667500D1 - Waermequelle fuer das chemische vakuumbeschichten. - Google Patents

Waermequelle fuer das chemische vakuumbeschichten.

Info

Publication number
DE3667500D1
DE3667500D1 DE8686108058T DE3667500T DE3667500D1 DE 3667500 D1 DE3667500 D1 DE 3667500D1 DE 8686108058 T DE8686108058 T DE 8686108058T DE 3667500 T DE3667500 T DE 3667500T DE 3667500 D1 DE3667500 D1 DE 3667500D1
Authority
DE
Germany
Prior art keywords
heat source
vacuum coating
chemical vacuum
chemical
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686108058T
Other languages
English (en)
Inventor
Matthew Leroy Bunch
J B Price
Robert William Stitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Spectrum Cvd Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spectrum Cvd Inc filed Critical Spectrum Cvd Inc
Application granted granted Critical
Publication of DE3667500D1 publication Critical patent/DE3667500D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
DE8686108058T 1985-08-05 1986-06-12 Waermequelle fuer das chemische vakuumbeschichten. Expired - Lifetime DE3667500D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/762,355 US4640224A (en) 1985-08-05 1985-08-05 CVD heat source

Publications (1)

Publication Number Publication Date
DE3667500D1 true DE3667500D1 (de) 1990-01-18

Family

ID=25064800

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686108058T Expired - Lifetime DE3667500D1 (de) 1985-08-05 1986-06-12 Waermequelle fuer das chemische vakuumbeschichten.

Country Status (4)

Country Link
US (1) US4640224A (de)
EP (1) EP0212117B1 (de)
JP (1) JP2625109B2 (de)
DE (1) DE3667500D1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus
DE3752208T2 (de) * 1986-11-10 1998-12-24 Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa Durch Mikrowellen gesteigertes CVD-Verfahren und -Gerät
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5755886A (en) * 1986-12-19 1998-05-26 Applied Materials, Inc. Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
JPH0672306B2 (ja) 1987-04-27 1994-09-14 株式会社半導体エネルギー研究所 プラズマ処理装置およびプラズマ処理方法
US4908495A (en) * 1988-12-20 1990-03-13 Texas Instruments Incorporated Heating lamp assembly for ccvd reactors
US6016383A (en) * 1990-01-19 2000-01-18 Applied Materials, Inc. Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
KR930011413B1 (ko) * 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
US5359693A (en) * 1991-07-15 1994-10-25 Ast Elektronik Gmbh Method and apparatus for a rapid thermal processing of delicate components
US5446824A (en) * 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
US6072160A (en) * 1996-06-03 2000-06-06 Applied Materials, Inc. Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
US6108490A (en) * 1996-07-11 2000-08-22 Cvc, Inc. Multizone illuminator for rapid thermal processing with improved spatial resolution
US5937142A (en) * 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US5980638A (en) * 1997-01-30 1999-11-09 Fusion Systems Corporation Double window exhaust arrangement for wafer plasma processor
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6018616A (en) * 1998-02-23 2000-01-25 Applied Materials, Inc. Thermal cycling module and process using radiant heat
US6228773B1 (en) 1998-04-14 2001-05-08 Matrix Integrated Systems, Inc. Synchronous multiplexed near zero overhead architecture for vacuum processes
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6023555A (en) * 1998-08-17 2000-02-08 Eaton Corporation Radiant heating apparatus and method
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6259072B1 (en) * 1999-11-09 2001-07-10 Axcelis Technologies, Inc. Zone controlled radiant heating system utilizing focused reflector
US20040089227A1 (en) * 2002-07-19 2004-05-13 Albert Wang Dual chamber vacuum processing system
SG125934A1 (en) * 2003-02-27 2006-10-30 Asahi Glass Co Ltd Outer tube made of silicon carbide and thermal treatment system for semiconductors
US20040222210A1 (en) * 2003-05-08 2004-11-11 Hongy Lin Multi-zone ceramic heating system and method of manufacture thereof
WO2012009636A1 (en) * 2010-07-15 2012-01-19 Despatch Industries Limited Partnership Firing furnace configuration for thermal processing system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623712A (en) * 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
US4101759A (en) * 1976-10-26 1978-07-18 General Electric Company Semiconductor body heater
JPS5845177B2 (ja) * 1979-03-09 1983-10-07 富士通株式会社 半導体表面絶縁膜の形成法
DE3066027D1 (en) * 1979-12-17 1984-02-02 Hughes Aircraft Co Low temperature process for depositing oxide layers by photochemical vapor deposition
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate
DD216737A1 (de) * 1983-07-20 1984-12-19 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur prozesskontrolle und -steuerung bei der plasmagestuetzten bearbeitung von substraten
DE3330092A1 (de) * 1983-08-20 1985-03-07 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum einstellen der oertlichen verdampfungsleistung an verdampfern in vakuumaufdampfprozessen
US4504730A (en) * 1983-10-04 1985-03-12 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light
JPS6092477A (ja) * 1983-10-27 1985-05-24 Matsushita Electric Ind Co Ltd プラズマ化学処理装置

Also Published As

Publication number Publication date
JP2625109B2 (ja) 1997-07-02
JPS6233774A (ja) 1987-02-13
EP0212117A1 (de) 1987-03-04
EP0212117B1 (de) 1989-12-13
US4640224A (en) 1987-02-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: BCT SPECTRUM INC. (N.D.GES.D.STAATES DELAWARE), PH

8328 Change in the person/name/address of the agent

Free format text: WAECHTERSHAEUSER, G., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: BALZERS AG, BALZERS, LI

8327 Change in the person/name/address of the patent owner

Owner name: MATERIALS RESEARCH CORP., ORANGEBURG, N.Y., US

8327 Change in the person/name/address of the patent owner

Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP

8328 Change in the person/name/address of the agent

Free format text: EISENFUEHR, SPEISER & PARTNER, 28195 BREMEN

8339 Ceased/non-payment of the annual fee