DE3638017C2 - - Google Patents

Info

Publication number
DE3638017C2
DE3638017C2 DE3638017A DE3638017A DE3638017C2 DE 3638017 C2 DE3638017 C2 DE 3638017C2 DE 3638017 A DE3638017 A DE 3638017A DE 3638017 A DE3638017 A DE 3638017A DE 3638017 C2 DE3638017 C2 DE 3638017C2
Authority
DE
Germany
Prior art keywords
region
type
diffused
semiconductor
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3638017A
Other languages
German (de)
English (en)
Other versions
DE3638017A1 (de
Inventor
Yoshio Matsuda
Kazuyasu Itami Hyogo Jp Fujishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3638017A1 publication Critical patent/DE3638017A1/de
Application granted granted Critical
Publication of DE3638017C2 publication Critical patent/DE3638017C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE19863638017 1985-11-13 1986-11-07 Halbleiterspeichereinrichtung Granted DE3638017A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60257093A JPS62114265A (ja) 1985-11-13 1985-11-13 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3638017A1 DE3638017A1 (de) 1987-05-14
DE3638017C2 true DE3638017C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-27

Family

ID=17301638

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863638017 Granted DE3638017A1 (de) 1985-11-13 1986-11-07 Halbleiterspeichereinrichtung

Country Status (4)

Country Link
US (2) US4833645A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS62114265A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3638017A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2183091B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62141756A (ja) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp 半導体記憶装置
JPS62141757A (ja) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp 半導体記憶装置の製造方法
JPS63302535A (ja) * 1987-06-03 1988-12-09 Mitsubishi Electric Corp ガリウム砒素集積回路
KR930009127B1 (ko) * 1991-02-25 1993-09-23 삼성전자 주식회사 스택형캐패시터를구비하는반도체메모리장치
KR100243741B1 (ko) * 1996-12-27 2000-02-01 김영환 반도체 소자의 제조방법
DE19848357A1 (de) 1998-10-21 2000-04-27 Edf Polymer Applikation Maschi Vorrichtung zum Herstellen und/oder Verarbeiten von Mehrkomponentengemischen
GB2358080B (en) 2000-01-07 2004-06-02 Seiko Epson Corp Method of manufacturing a thin-film transistor
DE10059398A1 (de) * 2000-11-30 2002-06-13 Basf Ag Verfahren zur Herstellung von Alkylarylsulfonaten
JP4928675B2 (ja) * 2001-03-01 2012-05-09 エルピーダメモリ株式会社 半導体装置
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1602361A (en) * 1977-02-21 1981-11-11 Zaidan Hojin Handotai Kenkyu Semiconductor memory devices
JPS54606A (en) * 1977-09-09 1979-01-06 Sanyo Electric Co Ltd Reel carriage device
US4163243A (en) * 1977-09-30 1979-07-31 Hewlett-Packard Company One-transistor memory cell with enhanced capacitance
JPS55146956A (en) * 1979-05-02 1980-11-15 Fujitsu Ltd Semiconductor element having function for avoiding generation of soft error due to alpha ray
JPS55160463A (en) * 1979-06-01 1980-12-13 Fujitsu Ltd Semiconductor memory device
DE3069973D1 (en) * 1979-08-25 1985-02-28 Zaidan Hojin Handotai Kenkyu Insulated-gate field-effect transistor
JPS5696854A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor memory device
US4507159A (en) * 1981-10-07 1985-03-26 Advanced Micro Devices, Inc. Method of manufacturing high capacity semiconductor capacitance devices
US4506436A (en) * 1981-12-21 1985-03-26 International Business Machines Corporation Method for increasing the radiation resistance of charge storage semiconductor devices
JPS6260256A (ja) * 1985-09-10 1987-03-16 Toshiba Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
DE3638017A1 (de) 1987-05-14
GB2183091A (en) 1987-05-28
US5030586A (en) 1991-07-09
US4833645A (en) 1989-05-23
GB8626659D0 (en) 1986-12-10
GB2183091B (en) 1989-02-01
JPS62114265A (ja) 1987-05-26

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8125 Change of the main classification

Ipc: G11C 11/24

8125 Change of the main classification

Ipc: H01L 27/108

D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee