DE3616233A1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE3616233A1
DE3616233A1 DE19863616233 DE3616233A DE3616233A1 DE 3616233 A1 DE3616233 A1 DE 3616233A1 DE 19863616233 DE19863616233 DE 19863616233 DE 3616233 A DE3616233 A DE 3616233A DE 3616233 A1 DE3616233 A1 DE 3616233A1
Authority
DE
Germany
Prior art keywords
metallization
emitter
semiconductor device
semiconductor
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863616233
Other languages
German (de)
English (en)
Other versions
DE3616233C2 (enExample
Inventor
Werner Dipl Ing Dr Tursky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Priority to DE19863616233 priority Critical patent/DE3616233A1/de
Priority to EP87902437A priority patent/EP0268599A1/de
Priority to JP62502953A priority patent/JPH01502706A/ja
Priority to PCT/DE1987/000221 priority patent/WO1987007080A1/de
Publication of DE3616233A1 publication Critical patent/DE3616233A1/de
Application granted granted Critical
Publication of DE3616233C2 publication Critical patent/DE3616233C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/401—Resistive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Die Bonding (AREA)
DE19863616233 1986-05-14 1986-05-14 Halbleiterbauelement Granted DE3616233A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19863616233 DE3616233A1 (de) 1986-05-14 1986-05-14 Halbleiterbauelement
EP87902437A EP0268599A1 (de) 1986-05-14 1987-05-12 Halbleiterbauelement
JP62502953A JPH01502706A (ja) 1986-05-14 1987-05-12 半導体構成要素
PCT/DE1987/000221 WO1987007080A1 (fr) 1986-05-14 1987-05-12 Composant a semiconducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19863616233 DE3616233A1 (de) 1986-05-14 1986-05-14 Halbleiterbauelement

Publications (2)

Publication Number Publication Date
DE3616233A1 true DE3616233A1 (de) 1987-11-19
DE3616233C2 DE3616233C2 (enExample) 1989-03-09

Family

ID=6300815

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863616233 Granted DE3616233A1 (de) 1986-05-14 1986-05-14 Halbleiterbauelement

Country Status (4)

Country Link
EP (1) EP0268599A1 (enExample)
JP (1) JPH01502706A (enExample)
DE (1) DE3616233A1 (enExample)
WO (1) WO1987007080A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031016A (en) * 1988-08-19 1991-07-09 Asea Brown Boveri Limited Semiconductor component with turn-off facility

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307235A (ja) * 1988-06-03 1989-12-12 Mitsubishi Electric Corp 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0121605A2 (de) * 1983-01-20 1984-10-17 BROWN, BOVERI & CIE Aktiengesellschaft Verfahren zur Herstellung einer mehrschichtigen Kontaktmetallisierung auf einem Silizium-Halbleiterbauelement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1910736C3 (de) * 1969-03-03 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens
JPS57181131A (en) * 1981-04-30 1982-11-08 Toshiba Corp Pressure-contact type semiconductor device
GB2168529B (en) * 1984-12-18 1988-02-03 Marconi Electronic Devices Electrical contacts for semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0121605A2 (de) * 1983-01-20 1984-10-17 BROWN, BOVERI & CIE Aktiengesellschaft Verfahren zur Herstellung einer mehrschichtigen Kontaktmetallisierung auf einem Silizium-Halbleiterbauelement

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DE-Z.: Siemens Forschungs- und Entwicklungs- Bericht, Bd. 14, Nr. 2, 1985, S. 39-44 *
US-Z.: Journal Applied Physics Bd. 55, Nr. 4, 1984, S. 914-919 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031016A (en) * 1988-08-19 1991-07-09 Asea Brown Boveri Limited Semiconductor component with turn-off facility

Also Published As

Publication number Publication date
EP0268599A1 (de) 1988-06-01
DE3616233C2 (enExample) 1989-03-09
WO1987007080A1 (fr) 1987-11-19
JPH01502706A (ja) 1989-09-14

Similar Documents

Publication Publication Date Title
DE1127488B (de) Halbleiteranordnung aus Silizium oder Germanium und Verfahren zu ihrer Herstellung
DE2050289A1 (enExample)
DE102013217801B4 (de) Halbleiteranordnung, verfahren zur herstellung einer anzahl von chipbaugruppen, verfahren zur herstellung einer halbleiteranordnung und verfahren zum betrieb einer halbleiteranordnung
DE2847853A1 (de) Presspackung-halbleitervorrichtung
DE2324780B2 (de) Verfahren zum herstellen eines halbleiterbauelements
DE3637513C2 (enExample)
DE3723150C2 (enExample)
DE3044514C2 (enExample)
DE2041727A1 (de) Mittels einer Gate-Elektrode steuerbare Schalteinrichtung
EP0187953A2 (de) Speicherkassettenschutz
DE2004776C2 (de) Halbleiterbauelement
EP0283588B1 (de) Steuerbares Leistungs-Halbleiterbauelement
DE3209666A1 (de) Halbleitervorrichtung und verfahren zum herstellen eines aufbaumetallkontaktes derselben
DE4300516C2 (de) Leistungshalbleitermodul
DE1639262A1 (de) Halbleiterbauelement mit einer Grossflaechen-Elektrode
DE2601131A1 (de) Halbleitereinrichtungen vom druckkontakt-typ
DE3616185C2 (enExample)
DE3616233A1 (de) Halbleiterbauelement
DE1805261A1 (de) Temperaturkompensierte Referenzdiode und Verfahren zur Herstellung derselben
DE3448379C2 (de) Gate-Abschaltthyristor
DE2606885A1 (de) Halbleiterbauteil
DE2855972A1 (de) Halbleiteranordnung
DE3781861T2 (de) Herstellung einer mehrschichtigen leistungshalbleiterschaltung mit mehrfachen parallelen kontaktfingern.
DE3538815A1 (de) Halbleiterbauelement
DE1166940B (de) Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnden Leitfaehigkeitstyps und Verfahren zum Herstellen

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee