DE3604799C2 - - Google Patents

Info

Publication number
DE3604799C2
DE3604799C2 DE19863604799 DE3604799A DE3604799C2 DE 3604799 C2 DE3604799 C2 DE 3604799C2 DE 19863604799 DE19863604799 DE 19863604799 DE 3604799 A DE3604799 A DE 3604799A DE 3604799 C2 DE3604799 C2 DE 3604799C2
Authority
DE
Germany
Prior art keywords
substrate
deposition
vapor pressure
cover layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19863604799
Other languages
German (de)
English (en)
Other versions
DE3604799A1 (de
Inventor
Heinz Prof. Dr.Rer.Nat. 5100 Aachen De Beneking
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Electronic GmbH
Licentia Patent Verwaltungs GmbH
Original Assignee
Telefunken Electronic GmbH
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH, Licentia Patent Verwaltungs GmbH filed Critical Telefunken Electronic GmbH
Priority to DE19863604799 priority Critical patent/DE3604799A1/de
Publication of DE3604799A1 publication Critical patent/DE3604799A1/de
Application granted granted Critical
Publication of DE3604799C2 publication Critical patent/DE3604799C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
DE19863604799 1986-02-15 1986-02-15 Verfahren zum herstellen von halbleiter-heterouebergaengen Granted DE3604799A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19863604799 DE3604799A1 (de) 1986-02-15 1986-02-15 Verfahren zum herstellen von halbleiter-heterouebergaengen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19863604799 DE3604799A1 (de) 1986-02-15 1986-02-15 Verfahren zum herstellen von halbleiter-heterouebergaengen

Publications (2)

Publication Number Publication Date
DE3604799A1 DE3604799A1 (de) 1987-08-20
DE3604799C2 true DE3604799C2 (fr) 1989-07-27

Family

ID=6294153

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863604799 Granted DE3604799A1 (de) 1986-02-15 1986-02-15 Verfahren zum herstellen von halbleiter-heterouebergaengen

Country Status (1)

Country Link
DE (1) DE3604799A1 (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL281602A (fr) * 1959-06-18

Also Published As

Publication number Publication date
DE3604799A1 (de) 1987-08-20

Similar Documents

Publication Publication Date Title
DE2416550C2 (de) Verfahren zum Herstellen eines Halbleiterbauelements mit versetzungsfreiem Übergitterstrukturkristall
DE10392313B4 (de) Auf Galliumnitrid basierende Vorrichtungen und Herstellungsverfahren
EP0321909B1 (fr) Procédé et appareillage pour l'épitaxie par couches monoatomiques
DE69631662T2 (de) GaAs-SUBSTRAT MIT GRADIERT ZUSAMMENGESETZTEM AeGaAsSb-PUFFER ZUR HERSTELLUNG VON FELDEFFEKTTRANSISTOREN MIT HOHEM INDIUM-GEHALT
DE3587377T2 (de) Verfahren zur herstellung von halbleiteranordnungen unter verwendung von silizium-auf- isolator techniken.
DE69204794T2 (de) Verfahren zur Züchtung von heteroepitaktischen Schichten.
DE4415601C2 (de) Komposit-Struktur für elektronische Bauteile und Verfahren zu deren Herstellung
DE3013563C2 (fr)
DE2653532C2 (de) Züchtungsverfahren für epitaktische Halbleiterschichten
DE68918799T2 (de) Verbindungshalbleitersubstrat.
DE2404276C3 (de) Verfahren zum Aufwachsen einer einkristallinen Schicht aus Halbleitermaterial auf ein Substrat
DE2154386C3 (de) Verfahren zum Herstellen einer epitaktischen Halbleiterschicht auf einem Halbleitersubstrat durch Abscheiden aus einem Reaktionsgas/Trägergas-Gemisch
DE3604799C2 (fr)
EP0187402B1 (fr) Méthode de fabrication de tungstène à orientation préférentielle (111)
DE60311412T2 (de) InP-basierte Hochtemperaturlaser mit InAsP-Quantenschachtschichten und Sperrschichten aus Gax(AIIn)1-xP
DE112015001803B4 (de) Verfahren zur Herstellung einer Schichtstruktur als Pufferschicht eines Halbleiterbauelements sowie Schichtstruktur als Pufferschicht eines Halbleiterbauelements
DE3689387T2 (de) Verfahren zur Herstellung einer Dünnschicht aus GaAs.
DE3617927C2 (fr)
DE1521804A1 (de) Verfahren zum chemischen Polieren von Substraten der III-V Verbindungshalbleiter
DE4421539C2 (de) Verfahren zur Herstellung eines Halbleiters aus einer Verbindung der Gruppe II-VI
DE3508024C2 (fr)
DE2556503C2 (de) Verfahren zum epitaktischen Niederschlagen einer Halbleiterschicht auf einem Substrat
DE3789067T2 (de) Herstellung von Halbleitervorrichtungen.
DE2420780A1 (de) Halbleiterplaettchen und verfahren zu seiner herstellung
DE3604260A1 (de) Fluessigkeitsepitaxieverfahren

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licenses declared (paragraph 23)
8339 Ceased/non-payment of the annual fee