DE3581353D1 - Halbleiteranordnung mit monokristalliner schicht aus ga-as auf einem substrat aus silicium und verfahren zu deren herstellung. - Google Patents

Halbleiteranordnung mit monokristalliner schicht aus ga-as auf einem substrat aus silicium und verfahren zu deren herstellung.

Info

Publication number
DE3581353D1
DE3581353D1 DE8585112542T DE3581353T DE3581353D1 DE 3581353 D1 DE3581353 D1 DE 3581353D1 DE 8585112542 T DE8585112542 T DE 8585112542T DE 3581353 T DE3581353 T DE 3581353T DE 3581353 D1 DE3581353 D1 DE 3581353D1
Authority
DE
Germany
Prior art keywords
monocristalline
silicon
production
layer
substrate made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585112542T
Other languages
German (de)
English (en)
Inventor
Masayoshi Umeno
Shiro Sakai
Tetsuo Soga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Original Assignee
Daido Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daido Steel Co Ltd filed Critical Daido Steel Co Ltd
Application granted granted Critical
Publication of DE3581353D1 publication Critical patent/DE3581353D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/149—Silicon on III-V
DE8585112542T 1984-10-09 1985-10-03 Halbleiteranordnung mit monokristalliner schicht aus ga-as auf einem substrat aus silicium und verfahren zu deren herstellung. Expired - Fee Related DE3581353D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59213188A JPS6191098A (ja) 1984-10-09 1984-10-09 シリコン基板上における砒素化ガリウム成長結晶体とその結晶成長方法

Publications (1)

Publication Number Publication Date
DE3581353D1 true DE3581353D1 (de) 1991-02-21

Family

ID=16634992

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585112542T Expired - Fee Related DE3581353D1 (de) 1984-10-09 1985-10-03 Halbleiteranordnung mit monokristalliner schicht aus ga-as auf einem substrat aus silicium und verfahren zu deren herstellung.

Country Status (5)

Country Link
US (1) US4789421A (https=)
EP (1) EP0177903B1 (https=)
JP (1) JPS6191098A (https=)
CA (1) CA1265980A (https=)
DE (1) DE3581353D1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3676019D1 (de) * 1985-09-03 1991-01-17 Daido Steel Co Ltd Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung.
US5578521A (en) * 1986-11-20 1996-11-26 Nippondenso Co., Ltd. Semiconductor device with vaporphase grown epitaxial
FR2620863B1 (fr) * 1987-09-22 1989-12-01 Thomson Csf Dispositif optoelectronique a base de composes iii-v sur substrat silicium
JPH01107515A (ja) * 1987-10-20 1989-04-25 Daido Steel Co Ltd 半導体素子の製造方法
JP2649936B2 (ja) * 1988-03-01 1997-09-03 富士通株式会社 歪超格子バッファ
JPH0237771A (ja) * 1988-07-28 1990-02-07 Fujitsu Ltd Ｓｏｉ基板
US5194395A (en) * 1988-07-28 1993-03-16 Fujitsu Limited Method of producing a substrate having semiconductor-on-insulator structure with gettering sites
JPH0294663A (ja) * 1988-09-30 1990-04-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5198269A (en) * 1989-04-24 1993-03-30 Battelle Memorial Institute Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
JP2557546B2 (ja) * 1990-03-30 1996-11-27 三菱電機株式会社 半導体装置の製造方法
JP3111644B2 (ja) * 1992-06-09 2000-11-27 三菱化学株式会社 りん化ひ化ガリウムエピタキシャルウエハ
US5993981A (en) * 1997-04-18 1999-11-30 Raytheon Company Broadband protective optical window coating
US20070252216A1 (en) * 2006-04-28 2007-11-01 Infineon Technologies Ag Semiconductor device and a method of manufacturing such a semiconductor device
NO20093193A1 (no) * 2009-10-22 2011-04-26 Integrated Solar As Fremgangsmate for fremstilling av fotoelektriske solceller og en multifunksjonell solcelle

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2225207B1 (https=) * 1973-04-16 1978-04-21 Ibm
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
US4517047A (en) * 1981-01-23 1985-05-14 The United States Of America As Represented By The Secretary Of The Army MBE growth technique for matching superlattices grown on GaAs substrates
US4578127A (en) * 1982-08-13 1986-03-25 At&T Bell Laboratories Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer
JPS6012724A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 化合物半導体の成長方法
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon

Also Published As

Publication number Publication date
JPH0463039B2 (https=) 1992-10-08
EP0177903A3 (en) 1987-09-09
US4789421A (en) 1988-12-06
EP0177903A2 (en) 1986-04-16
CA1265980A (en) 1990-02-20
EP0177903B1 (en) 1991-01-16
JPS6191098A (ja) 1986-05-09

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8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 81245 MUENCHEN

8339 Ceased/non-payment of the annual fee