DE3581293D1 - Verfahren zur herstellung von ultrafeinen keramikpartikeln. - Google Patents
Verfahren zur herstellung von ultrafeinen keramikpartikeln.Info
- Publication number
- DE3581293D1 DE3581293D1 DE8585101305T DE3581293T DE3581293D1 DE 3581293 D1 DE3581293 D1 DE 3581293D1 DE 8585101305 T DE8585101305 T DE 8585101305T DE 3581293 T DE3581293 T DE 3581293T DE 3581293 D1 DE3581293 D1 DE 3581293D1
- Authority
- DE
- Germany
- Prior art keywords
- ceramic particles
- producing ultrafine
- ultrafine ceramic
- producing
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/08—Application of shock waves for chemical reactions or for modifying the crystal structure of substances
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
- C01B13/32—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process
- C01B13/322—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process of elements or compounds in the solid state
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
- C01B21/0761—Preparation by direct nitridation of titanium, zirconium or hafnium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
- C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/02—Magnesia
- C01F5/04—Magnesia by oxidation of metallic magnesium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/42—Preparation of aluminium oxide or hydroxide from metallic aluminium, e.g. by oxidation
- C01F7/422—Preparation of aluminium oxide or hydroxide from metallic aluminium, e.g. by oxidation by oxidation with a gaseous oxidator at a high temperature
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G49/00—Compounds of iron
- C01G49/02—Oxides; Hydroxides
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0612—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with alkaline-earth metals, beryllium or magnesium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
- C01B21/0622—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with iron, cobalt or nickel
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/02—Amorphous compounds
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59022463A JPS60166025A (ja) | 1984-02-09 | 1984-02-09 | セラミツク超微粒子の製造方法 |
JP59109108A JPS60255602A (ja) | 1984-05-29 | 1984-05-29 | 酸化物超微粒子の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3581293D1 true DE3581293D1 (de) | 1991-02-21 |
Family
ID=26359690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585101305T Expired - Lifetime DE3581293D1 (de) | 1984-02-09 | 1985-02-07 | Verfahren zur herstellung von ultrafeinen keramikpartikeln. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4705762A (de) |
EP (1) | EP0151490B1 (de) |
DE (1) | DE3581293D1 (de) |
Families Citing this family (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8527716D0 (en) * | 1985-11-09 | 1985-12-11 | Tioxide Group Plc | Finely divided oxide |
DE3741119A1 (de) * | 1987-12-04 | 1989-06-15 | Krupp Gmbh | Erzeugung von sekundaerpulverteilchen mit nanokristalliner struktur und mit versiegelten oberflaechen |
US5250478A (en) * | 1988-07-28 | 1993-10-05 | Kyocera Corporation | Aluminum nitride sintered body and process for preparation thereof |
US5004488A (en) * | 1989-03-20 | 1991-04-02 | Pitman-Moore, Inc. | Process for producing high purity fused quartz powder |
JP2899893B2 (ja) * | 1989-06-07 | 1999-06-02 | 京セラ株式会社 | 窒化アルミニウム質焼結体およびその製造方法 |
US5128081A (en) * | 1989-12-05 | 1992-07-07 | Arch Development Corporation | Method of making nanocrystalline alpha alumina |
US5326589A (en) * | 1991-01-22 | 1994-07-05 | Shin-Etsu Chemical Co., Ltd | Method of protecting electronic or electric part |
JP2555786B2 (ja) * | 1991-01-22 | 1996-11-20 | 信越化学工業株式会社 | 電子・電気部品保護コート用シリコーンゴム組成物及び硬化物 |
JPH0686557B2 (ja) * | 1991-05-27 | 1994-11-02 | 信越化学工業株式会社 | ポリプロピレンフィルム |
DE4214725C2 (de) * | 1992-05-04 | 1995-04-20 | Starck H C Gmbh Co Kg | Feinteilige Nichtoxid-Keramikpulver |
DE4214719C2 (de) * | 1992-05-04 | 1995-02-02 | Starck H C Gmbh Co Kg | Verfahren zur Herstellung feinteiliger Metall- und Keramikpulver |
DE4214720C2 (de) * | 1992-05-04 | 1994-10-13 | Starck H C Gmbh Co Kg | Vorrichtung zur Herstellung feinteiliger Metall- und Keramikpulver |
DE4214724C2 (de) * | 1992-05-04 | 1995-05-18 | Starck H C Gmbh Co Kg | Feinteiliges Oxid-Keramikpulver |
US5358695A (en) * | 1993-01-21 | 1994-10-25 | Physical Sciences, Inc. | Process for producing nanoscale ceramic powders |
US5447708A (en) * | 1993-01-21 | 1995-09-05 | Physical Sciences, Inc. | Apparatus for producing nanoscale ceramic powders |
US5316697A (en) * | 1993-03-24 | 1994-05-31 | Kerr-Mcgee Corporation | Conductive, particulate, fluorine-doped zinc oxide |
DE4334639A1 (de) * | 1993-10-11 | 1995-04-13 | Inst Neue Mat Gemein Gmbh | Verfahren zur Herstellung von TiN-Sinterkörpern und -Schichten |
DE4337336C1 (de) * | 1993-11-02 | 1994-12-15 | Starck H C Gmbh Co Kg | Feinteilige Metall-, Legierungs- und Metallverbindungspulver |
US5455212A (en) * | 1994-03-15 | 1995-10-03 | The University Of British Columbia | In situ production of silicon carbide-containing ceramic composite powders |
US5879794A (en) * | 1994-08-25 | 1999-03-09 | W. L. Gore & Associates, Inc. | Adhesive-filler film composite |
US5910255A (en) * | 1996-11-08 | 1999-06-08 | W. L. Gore & Associates, Inc. | Method of sequential laser processing to efficiently manufacture modules requiring large volumetric density material removal for micro-via formation |
US5863446A (en) * | 1996-11-08 | 1999-01-26 | W. L. Gore & Associates, Inc. | Electrical means for extracting layer to layer registration |
US5896038A (en) * | 1996-11-08 | 1999-04-20 | W. L. Gore & Associates, Inc. | Method of wafer level burn-in |
US5766979A (en) * | 1996-11-08 | 1998-06-16 | W. L. Gore & Associates, Inc. | Wafer level contact sheet and method of assembly |
US5868887A (en) * | 1996-11-08 | 1999-02-09 | W. L. Gore & Associates, Inc. | Method for minimizing warp and die stress in the production of an electronic assembly |
AU5083998A (en) * | 1996-11-08 | 1998-05-29 | W.L. Gore & Associates, Inc. | Dimensionally stable solder mask material and method of application |
US5966593A (en) * | 1996-11-08 | 1999-10-12 | W. L. Gore & Associates, Inc. | Method of forming a wafer level contact sheet having a permanent z-axis material |
WO1998020557A1 (en) * | 1996-11-08 | 1998-05-14 | W.L. Gore & Associates, Inc. | Method for reducing via inductance in an electronic assembly and device |
US5830565A (en) * | 1996-11-08 | 1998-11-03 | W. L. Gore & Associates, Inc. | High planarity and low thermal coefficient of expansion base for semi-conductor reliability screening |
US5778523A (en) * | 1996-11-08 | 1998-07-14 | W. L. Gore & Associates, Inc. | Method for controlling warp of electronic assemblies by use of package stiffener |
US5882459A (en) * | 1996-11-08 | 1999-03-16 | W. L. Gore & Associates, Inc. | Method for aligning and laminating substrates to stiffeners in electrical circuits |
AU4902897A (en) | 1996-11-08 | 1998-05-29 | W.L. Gore & Associates, Inc. | Method for improving reliability of thin circuit substrates by increasing the T of the substrate |
US5879787A (en) * | 1996-11-08 | 1999-03-09 | W. L. Gore & Associates, Inc. | Method and apparatus for improving wireability in chip modules |
US5853517A (en) * | 1996-11-08 | 1998-12-29 | W. L. Gore & Associates, Inc. | Method for coining solder balls on an electrical circuit package |
US5900312A (en) * | 1996-11-08 | 1999-05-04 | W. L. Gore & Associates, Inc. | Integrated circuit chip package assembly |
US5965043A (en) * | 1996-11-08 | 1999-10-12 | W. L. Gore & Associates, Inc. | Method for using ultrasonic treatment in combination with UV-lasers to enable plating of high aspect ratio micro-vias |
WO1998020533A2 (en) * | 1996-11-08 | 1998-05-14 | W.L. Gore & Associates, Inc. | Method for using photoabsorptive coatings to enhance both blind and through micro-via entrance quality |
US5868950A (en) * | 1996-11-08 | 1999-02-09 | W. L. Gore & Associates, Inc. | Method to correct astigmatism of fourth yag to enable formation of sub 25 micron micro-vias using masking techniques |
US5847327A (en) * | 1996-11-08 | 1998-12-08 | W.L. Gore & Associates, Inc. | Dimensionally stable core for use in high density chip packages |
US5966022A (en) * | 1996-11-08 | 1999-10-12 | W. L. Gore & Associates, Inc. | Wafer level burn-in system |
US5886535A (en) * | 1996-11-08 | 1999-03-23 | W. L. Gore & Associates, Inc. | Wafer level burn-in base unit substrate and assembly |
US5879786A (en) * | 1996-11-08 | 1999-03-09 | W. L. Gore & Associates, Inc. | Constraining ring for use in electronic packaging |
US5779921A (en) * | 1996-11-08 | 1998-07-14 | W. L. Gore & Associates, Inc. | Method for selectively plating an organic substrate |
US6103992A (en) * | 1996-11-08 | 2000-08-15 | W. L. Gore & Associates, Inc. | Multiple frequency processing to minimize manufacturing variability of high aspect ratio micro through-vias |
US5841102A (en) * | 1996-11-08 | 1998-11-24 | W. L. Gore & Associates, Inc. | Multiple pulse space processing to enhance via entrance formation at 355 nm |
WO1998020534A1 (en) * | 1996-11-08 | 1998-05-14 | W.L. Gore & Associates, Inc. | Method for using fiducial schemes to increase nominal registration |
US6023041A (en) * | 1996-11-08 | 2000-02-08 | W.L. Gore & Associates, Inc. | Method for using photoabsorptive coatings and consumable copper to control exit via redeposit as well as diameter variance |
US5909123A (en) * | 1996-11-08 | 1999-06-01 | W. L. Gore & Associates, Inc. | Method for performing reliability screening and burn-in of semi-conductor wafers |
US5888630A (en) * | 1996-11-08 | 1999-03-30 | W. L. Gore & Associates, Inc. | Apparatus and method for unit area composition control to minimize warp in an integrated circuit chip package assembly |
US5888631A (en) | 1996-11-08 | 1999-03-30 | W. L. Gore & Associates, Inc. | Method for minimizing warp in the production of electronic assemblies |
US5731047A (en) * | 1996-11-08 | 1998-03-24 | W.L. Gore & Associates, Inc. | Multiple frequency processing to improve electrical resistivity of blind micro-vias |
US5838063A (en) * | 1996-11-08 | 1998-11-17 | W. L. Gore & Associates | Method of increasing package reliability using package lids with plane CTE gradients |
US5973290A (en) * | 1997-02-26 | 1999-10-26 | W. L. Gore & Associates, Inc. | Laser apparatus having improved via processing rate |
US6387531B1 (en) | 1998-07-27 | 2002-05-14 | Nanogram Corporation | Metal (silicon) oxide/carbon composite particles |
US6099798A (en) * | 1997-10-31 | 2000-08-08 | Nanogram Corp. | Ultraviolet light block and photocatalytic materials |
US6106798A (en) * | 1997-07-21 | 2000-08-22 | Nanogram Corporation | Vanadium oxide nanoparticles |
US6290735B1 (en) | 1997-10-31 | 2001-09-18 | Nanogram Corporation | Abrasive particles for surface polishing |
US20090255189A1 (en) * | 1998-08-19 | 2009-10-15 | Nanogram Corporation | Aluminum oxide particles |
US6726990B1 (en) | 1998-05-27 | 2004-04-27 | Nanogram Corporation | Silicon oxide particles |
US7384680B2 (en) * | 1997-07-21 | 2008-06-10 | Nanogram Corporation | Nanoparticle-based power coatings and corresponding structures |
CA2212471C (en) * | 1997-08-06 | 2003-04-01 | Tony Addona | A method of forming an oxide ceramic anode in a transferred plasma arc reactor |
US5919329A (en) * | 1997-10-14 | 1999-07-06 | Gore Enterprise Holdings, Inc. | Method for assembling an integrated circuit chip package having at least one semiconductor device |
US5938979A (en) * | 1997-10-31 | 1999-08-17 | Nanogram Corporation | Electromagnetic shielding |
NO310142B1 (no) * | 1999-03-29 | 2001-05-28 | Elkem Materials | Fremgangsmåte for fremstilling av amorft silica fra silisium og fra silisiumholdige materialer |
NL1012897C2 (nl) * | 1999-08-24 | 2001-02-27 | Tno | Werkwijze voor het maken van een tandheelkundig element. |
US6746508B1 (en) | 1999-10-22 | 2004-06-08 | Chrysalis Technologies Incorporated | Nanosized intermetallic powders |
US6368406B1 (en) | 2000-09-13 | 2002-04-09 | Chrysalis Technologies Incorporated | Nanocrystalline intermetallic powders made by laser evaporation |
MXPA04004265A (es) * | 2004-05-04 | 2005-11-09 | Mexicano Inst Petrol | Material de oxido de titanio nanoestructurado y procedimiento para su obtencion. |
US7416655B2 (en) | 2003-10-10 | 2008-08-26 | Instituto Mexicano Del Petroleo | Selective adsorbent material and its use |
US7645439B2 (en) | 2003-10-10 | 2010-01-12 | Instituto Mexicano Del Petroleo | Nanostructured titanium oxide material and its synthesis procedure |
WO2005060610A2 (en) * | 2003-12-11 | 2005-07-07 | The Trustees Of Columbia University In The City Ofnew York | Nano-sized particles, processes of making, compositions and uses thereof |
US7282167B2 (en) * | 2003-12-15 | 2007-10-16 | Quantumsphere, Inc. | Method and apparatus for forming nano-particles |
WO2006082844A1 (ja) * | 2005-02-02 | 2006-08-10 | National Institute For Materials Science | ナノサイズ粉体の製造方法 |
DE102005025660B4 (de) | 2005-06-03 | 2015-10-15 | Cosma Engineering Europe Ag | Vorrichtung und Verfahren zum Explosionsumformen |
DE102005045767B4 (de) * | 2005-09-23 | 2012-03-29 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauteils mit Kunststoffgehäusemasse |
CN104649282B (zh) * | 2006-06-09 | 2017-06-13 | 株式会社德山 | 干式二氧化硅微粒 |
DE102006037754B3 (de) | 2006-08-11 | 2008-01-24 | Cosma Engineering Europe Ag | Verfahren und Vorrichtung zum Explosionsumformen |
DE102006037742B4 (de) | 2006-08-11 | 2010-12-09 | Cosma Engineering Europe Ag | Verfahren und Vorrichtung zum Explosionsumformen |
US7803295B2 (en) | 2006-11-02 | 2010-09-28 | Quantumsphere, Inc | Method and apparatus for forming nano-particles |
US20090297626A1 (en) * | 2006-11-03 | 2009-12-03 | The Trustees Of Columbia University In The City Of New York | Methods for preparing metal oxides |
DE102006056788B4 (de) | 2006-12-01 | 2013-10-10 | Cosma Engineering Europe Ag | Verschlusseinrichtung für das Explosionsumformen |
DE102006060372A1 (de) | 2006-12-20 | 2008-06-26 | Cosma Engineering Europe Ag | Werkstück und Verfahren für das Explosionsumformen |
US20080176075A1 (en) | 2007-01-15 | 2008-07-24 | Saint-Gobain Ceramics & Plastics, Inc. | Ceramic particulate material and processes for forming same |
DE102007007330A1 (de) | 2007-02-14 | 2008-08-21 | Cosma Engineering Europe Ag | Verfahren und Werkzeuganordnung zum Explosionsumformen |
US8443641B2 (en) | 2007-02-14 | 2013-05-21 | Cosma Engineering Europe Ag | Explosion forming system |
DE102007023669B4 (de) | 2007-05-22 | 2010-12-02 | Cosma Engineering Europe Ag | Zündeinrichtung für das Explosionsumformen |
DE102007036196A1 (de) | 2007-08-02 | 2009-02-05 | Cosma Engineering Europe Ag | Vorrichtung für die Zufuhr eines Fluids für Explosionsumformen |
DE102008006979A1 (de) | 2008-01-31 | 2009-08-06 | Cosma Engineering Europe Ag | Vorrichtung für das Explosionsumformen |
CN111108640B (zh) * | 2017-09-20 | 2023-08-18 | 应用材料公司 | 处理腔室及用于形成电化学能储存装置的元件的陶瓷层的方法、蒸发源 |
CN115806737B (zh) * | 2021-09-13 | 2024-05-14 | 中山台光电子材料有限公司 | 树脂组合物及其制品 |
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NL91125C (de) * | 1955-03-28 | 1900-01-01 | ||
US2965474A (en) * | 1958-07-18 | 1960-12-20 | Union Carbide Corp | Reduction of metal oxides |
US3183077A (en) * | 1962-01-30 | 1965-05-11 | Bendix Balzers Vacuum Inc | Process for vacuum degassing |
GB1031651A (en) * | 1964-01-31 | 1966-06-02 | Welwyn Electric Ltd | Improvements in the manufacture of oxide mixes |
US3726643A (en) * | 1970-04-09 | 1973-04-10 | I Khim Fiz Akademii Nauk | Method of producing refractory carbides,borides,silicides,sulfides,and nitrides of metals of groups iv,v,and vi of the periodic system |
US3848068A (en) * | 1971-04-21 | 1974-11-12 | Corning Glass Works | Method for producing metal compounds |
IT1055884B (it) * | 1976-02-17 | 1982-01-11 | Montedison Spa | Procedimento ad arco plasma di prodotti ceramici metallici e simili |
US4221762A (en) * | 1978-01-30 | 1980-09-09 | Andrjushin Alexandr I | Apparatus for preparing carbides |
US4468474A (en) * | 1983-05-16 | 1984-08-28 | Allied Corporation | Iron/silicon-based catalyst exhibiting high selectivity to C2 -C62 Fischer-Tropsch reactions |
JPS60175537A (ja) * | 1984-02-22 | 1985-09-09 | Toyota Motor Corp | セラミツク超微粒子の製造方法 |
-
1985
- 1985-02-07 EP EP85101305A patent/EP0151490B1/de not_active Expired - Lifetime
- 1985-02-07 DE DE8585101305T patent/DE3581293D1/de not_active Expired - Lifetime
- 1985-02-08 US US06/699,909 patent/US4705762A/en not_active Expired - Lifetime
Also Published As
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EP0151490A2 (de) | 1985-08-14 |
EP0151490A3 (en) | 1988-07-06 |
EP0151490B1 (de) | 1991-01-16 |
US4705762A (en) | 1987-11-10 |
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