DE3545896A1 - Halbleiterlaservorrichtung - Google Patents
HalbleiterlaservorrichtungInfo
- Publication number
- DE3545896A1 DE3545896A1 DE19853545896 DE3545896A DE3545896A1 DE 3545896 A1 DE3545896 A1 DE 3545896A1 DE 19853545896 DE19853545896 DE 19853545896 DE 3545896 A DE3545896 A DE 3545896A DE 3545896 A1 DE3545896 A1 DE 3545896A1
- Authority
- DE
- Germany
- Prior art keywords
- elements
- laser
- photodetector
- light
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101100286286 Dictyostelium discoideum ipi gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 244000221110 common millet Species 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59273291A JPS61152088A (ja) | 1984-12-26 | 1984-12-26 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3545896A1 true DE3545896A1 (de) | 1986-07-03 |
| DE3545896C2 DE3545896C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-08-24 |
Family
ID=17525801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853545896 Granted DE3545896A1 (de) | 1984-12-26 | 1985-12-23 | Halbleiterlaservorrichtung |
Country Status (3)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3636054C1 (en) * | 1986-10-23 | 1988-04-14 | Messerschmitt Boelkow Blohm | Integrated circuit and its use |
| EP0543680A1 (en) * | 1991-11-22 | 1993-05-26 | The Furukawa Electric Co., Ltd. | Laser diode array device |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61159788A (ja) * | 1985-01-07 | 1986-07-19 | Matsushita Electric Ind Co Ltd | 半導体レ−ザアレイ装置 |
| JPS6350156U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1986-09-19 | 1988-04-05 | ||
| JPH02271586A (ja) * | 1989-04-12 | 1990-11-06 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JPH032664U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1989-05-31 | 1991-01-11 | ||
| US4947400A (en) * | 1989-06-26 | 1990-08-07 | At&T Bell Laboratories | Laser-photodetector assemblage |
| US5287376A (en) * | 1992-12-14 | 1994-02-15 | Xerox Corporation | Independently addressable semiconductor diode lasers with integral lowloss passive waveguides |
| JP3504848B2 (ja) * | 1998-02-02 | 2004-03-08 | 日本電信電話株式会社 | 半導体光源装置、および、その制御方法 |
| JP2001244570A (ja) * | 2000-02-29 | 2001-09-07 | Sony Corp | 半導体レーザ、レーザカプラおよびデータ再生装置、データ記録装置ならびに半導体レーザの製造方法 |
| KR20080037848A (ko) * | 2006-10-27 | 2008-05-02 | 삼성전자주식회사 | 광차단막을 갖는 반도체 레이저 소자의 제조방법 |
| JP5206944B2 (ja) * | 2008-02-25 | 2013-06-12 | 富士ゼロックス株式会社 | 光学モジュールおよびそれを用いた医療用光計測システム |
| JP6926414B2 (ja) * | 2016-08-10 | 2021-08-25 | 富士フイルムビジネスイノベーション株式会社 | 発光素子アレイ、及び光伝送装置 |
| CN114914791A (zh) * | 2022-05-23 | 2022-08-16 | 南京大学 | 一种集成激光光源和探测结构及其制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05257790A (ja) * | 1992-03-13 | 1993-10-08 | Nec Corp | 集合パネル装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5257790A (en) * | 1975-11-06 | 1977-05-12 | Sharp Corp | Semiconductor scanner |
-
1984
- 1984-12-26 JP JP59273291A patent/JPS61152088A/ja active Granted
-
1985
- 1985-12-23 DE DE19853545896 patent/DE3545896A1/de active Granted
-
1987
- 1987-11-13 US US07/120,745 patent/US4774711A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05257790A (ja) * | 1992-03-13 | 1993-10-08 | Nec Corp | 集合パネル装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3636054C1 (en) * | 1986-10-23 | 1988-04-14 | Messerschmitt Boelkow Blohm | Integrated circuit and its use |
| EP0543680A1 (en) * | 1991-11-22 | 1993-05-26 | The Furukawa Electric Co., Ltd. | Laser diode array device |
Also Published As
| Publication number | Publication date |
|---|---|
| US4774711A (en) | 1988-09-27 |
| JPS61152088A (ja) | 1986-07-10 |
| JPH0571154B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-10-06 |
| DE3545896C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3721799C2 (de) | Integrierte Redox-Bauelementschaltung und Verfahren zum Herstellen | |
| DE2542518C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3850855T2 (de) | Halbleitervorrichtung. | |
| DE3390103C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3545896A1 (de) | Halbleiterlaservorrichtung | |
| DE2929484C2 (de) | Monolithische Halbleiteranordnung zur Umwandlung von in unterschiedlichen Wellenlängenbereichen liegenden Lichtsignalen in elektrische Signale | |
| DE4020195A1 (de) | Halbleiterchip und verfahren zu seiner herstellung | |
| DE68928193T2 (de) | Halbleiterchip und Verfahren zu seiner Herstellung | |
| EP3281261B1 (de) | Monolithische diodenlaseranordnung | |
| DE3819671C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3007809A1 (de) | Halbleiterlichtausstrahlungselement und verfahren zu seiner herstellung | |
| DE2523221C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE19934560B4 (de) | Photovoltaikmodul mit integriert serienverschalteten Zellen und Herstellungsverfahren hierfür | |
| DE3586196T2 (de) | Lichtemittierende diodenanordnung. | |
| DE3903837C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3634850C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| EP0328886B1 (de) | Isoliereinrichtung zum optischen Isolieren integrierter Komponenten | |
| DE3932277C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE102012212152A1 (de) | Chip, der eine integrierte schaltung aufweist, herstellungsverfahren und verfahren zum lokalen leitfähigmachen einer kohlenstoffhaltigen schicht | |
| DE3434741A1 (de) | Verkoppelte laserdioden-anordnung | |
| DE10162914B4 (de) | Lichtemittierendes Halbleiterbauelement | |
| DE3912800A1 (de) | Flaechenstrahler | |
| WO2023036975A1 (de) | Optoelektronische vorrichtung und verfahren zur herstellung | |
| DE60123804T2 (de) | Herstellungsverfahren für pyroelektrische sensoren mit einer elektrische polung benötigenden pyroelektrischen dünnschicht | |
| DE102005043918B4 (de) | Detektoranordnung und Verfahren zur Bestimmung spektraler Anteile in einer auf eine Detektoranordnung einfallenden Strahlung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |