DE3530999A1 - Verfahren zur herstellung von halbleiteranordnungen - Google Patents

Verfahren zur herstellung von halbleiteranordnungen

Info

Publication number
DE3530999A1
DE3530999A1 DE19853530999 DE3530999A DE3530999A1 DE 3530999 A1 DE3530999 A1 DE 3530999A1 DE 19853530999 DE19853530999 DE 19853530999 DE 3530999 A DE3530999 A DE 3530999A DE 3530999 A1 DE3530999 A1 DE 3530999A1
Authority
DE
Germany
Prior art keywords
epitaxial
edge zones
peripheral edge
semiconductor wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853530999
Other languages
German (de)
English (en)
Other versions
DE3530999C2 (enExample
Inventor
Harald Dipl Ing Dr Matthes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Semiconductor GmbH
Original Assignee
Telefunken Electronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH filed Critical Telefunken Electronic GmbH
Priority to DE19853530999 priority Critical patent/DE3530999A1/de
Publication of DE3530999A1 publication Critical patent/DE3530999A1/de
Application granted granted Critical
Publication of DE3530999C2 publication Critical patent/DE3530999C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
DE19853530999 1985-08-30 1985-08-30 Verfahren zur herstellung von halbleiteranordnungen Granted DE3530999A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19853530999 DE3530999A1 (de) 1985-08-30 1985-08-30 Verfahren zur herstellung von halbleiteranordnungen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853530999 DE3530999A1 (de) 1985-08-30 1985-08-30 Verfahren zur herstellung von halbleiteranordnungen

Publications (2)

Publication Number Publication Date
DE3530999A1 true DE3530999A1 (de) 1987-03-05
DE3530999C2 DE3530999C2 (enExample) 1989-07-27

Family

ID=6279744

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853530999 Granted DE3530999A1 (de) 1985-08-30 1985-08-30 Verfahren zur herstellung von halbleiteranordnungen

Country Status (1)

Country Link
DE (1) DE3530999A1 (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2718026A1 (de) * 1976-04-22 1977-11-10 Fujitsu Ltd Verfahren zum aufwachsen einer duennschicht aus der dampfphase

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2718026A1 (de) * 1976-04-22 1977-11-10 Fujitsu Ltd Verfahren zum aufwachsen einer duennschicht aus der dampfphase

Also Published As

Publication number Publication date
DE3530999C2 (enExample) 1989-07-27

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licenses declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: TEMIC TELEFUNKEN MICROELECTRONIC GMBH, 74072 HEILB

8327 Change in the person/name/address of the patent owner

Owner name: VISHAY SEMICONDUCTOR GMBH, 74072 HEILBRONN, DE

8339 Ceased/non-payment of the annual fee