DE3486185D1 - Lichtemittierende halbleitervorrichtung. - Google Patents

Lichtemittierende halbleitervorrichtung.

Info

Publication number
DE3486185D1
DE3486185D1 DE8484307115T DE3486185T DE3486185D1 DE 3486185 D1 DE3486185 D1 DE 3486185D1 DE 8484307115 T DE8484307115 T DE 8484307115T DE 3486185 T DE3486185 T DE 3486185T DE 3486185 D1 DE3486185 D1 DE 3486185D1
Authority
DE
Germany
Prior art keywords
light
semiconductor device
emitting semiconductor
emitting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484307115T
Other languages
English (en)
Other versions
DE3486185T2 (de
Inventor
Hiroshi C O Osaka Works Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE3486185D1 publication Critical patent/DE3486185D1/de
Application granted granted Critical
Publication of DE3486185T2 publication Critical patent/DE3486185T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE84307115T 1983-10-19 1984-10-17 Lichtemittierende halbleitervorrichtung. Expired - Fee Related DE3486185T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58195529A JPS6086879A (ja) 1983-10-19 1983-10-19 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
DE3486185D1 true DE3486185D1 (de) 1993-09-02
DE3486185T2 DE3486185T2 (de) 1993-11-04

Family

ID=16342600

Family Applications (1)

Application Number Title Priority Date Filing Date
DE84307115T Expired - Fee Related DE3486185T2 (de) 1983-10-19 1984-10-17 Lichtemittierende halbleitervorrichtung.

Country Status (4)

Country Link
US (1) US4623907A (de)
EP (1) EP0140645B1 (de)
JP (1) JPS6086879A (de)
DE (1) DE3486185T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680607A (en) * 1984-05-11 1987-07-14 Sanyo Electric Co., Ltd. Photovoltaic cell
JPH071798B2 (ja) * 1986-09-12 1995-01-11 日本電気株式会社 発光ダイオ−ド
JP2795195B2 (ja) * 1994-09-28 1998-09-10 信越半導体株式会社 発光素子
JP4023893B2 (ja) * 1997-06-06 2007-12-19 沖電気工業株式会社 発光素子アレイ及び発光素子
CN1314088C (zh) * 2003-11-10 2007-05-02 四川大学 一种低开启电压砷化镓基异质结双极晶体管

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313125A (en) * 1979-06-21 1982-01-26 Bell Telephone Laboratories, Incorporated Light emitting semiconductor devices
JPS5627987A (en) * 1979-08-15 1981-03-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS56107588A (en) * 1980-01-30 1981-08-26 Fujitsu Ltd Semiconductor light emitting element
JPS56118330A (en) * 1980-02-22 1981-09-17 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
US4623907A (en) 1986-11-18
EP0140645A2 (de) 1985-05-08
EP0140645A3 (en) 1987-09-16
JPH0325032B2 (de) 1991-04-04
EP0140645B1 (de) 1993-07-28
DE3486185T2 (de) 1993-11-04
JPS6086879A (ja) 1985-05-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee