DE3481380D1 - Verfahren zum trennen von verbindungen durch benutzen eines fokussierten ionenbuendels. - Google Patents

Verfahren zum trennen von verbindungen durch benutzen eines fokussierten ionenbuendels.

Info

Publication number
DE3481380D1
DE3481380D1 DE8484302827T DE3481380T DE3481380D1 DE 3481380 D1 DE3481380 D1 DE 3481380D1 DE 8484302827 T DE8484302827 T DE 8484302827T DE 3481380 T DE3481380 T DE 3481380T DE 3481380 D1 DE3481380 D1 DE 3481380D1
Authority
DE
Germany
Prior art keywords
focused ion
ion bunch
disconnecting connections
disconnecting
connections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484302827T
Other languages
English (en)
Inventor
Tadahiro C O Patent D Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3481380D1 publication Critical patent/DE3481380D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE8484302827T 1983-04-30 1984-04-26 Verfahren zum trennen von verbindungen durch benutzen eines fokussierten ionenbuendels. Expired - Lifetime DE3481380D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7644283A JPS59201441A (ja) 1983-04-30 1983-04-30 集束イオンビ−ムを用いたヒユ−ズ切断方法

Publications (1)

Publication Number Publication Date
DE3481380D1 true DE3481380D1 (de) 1990-03-22

Family

ID=13605263

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484302827T Expired - Lifetime DE3481380D1 (de) 1983-04-30 1984-04-26 Verfahren zum trennen von verbindungen durch benutzen eines fokussierten ionenbuendels.

Country Status (3)

Country Link
EP (1) EP0124358B1 (de)
JP (1) JPS59201441A (de)
DE (1) DE3481380D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2632674B2 (ja) * 1986-09-26 1997-07-23 東京エレクトロン 株式会社 半導体装置の修復方法
US4819038A (en) * 1986-12-22 1989-04-04 Ibm Corporation TFT array for liquid crystal displays allowing in-process testing
IL82113A (en) * 1987-04-05 1992-08-18 Zvi Orbach Fabrication of customized integrated circuits
JP2793232B2 (ja) * 1989-03-17 1998-09-03 株式会社東芝 イオンビームによる配線の切断および接続に適した半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148389A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Manufacturing method of semiconductor device
DE2651187A1 (de) * 1976-11-10 1978-05-18 Kuhlmann Schaefer Wilhelm Verfahren und vorrichtung zum abtragen von schichten
JPS58170A (ja) * 1981-06-24 1983-01-05 Mitsubishi Electric Corp 半導体装置
JPS5856355A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 半導体集積回路装置
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
JPS5968945A (ja) * 1982-10-12 1984-04-19 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0124358A2 (de) 1984-11-07
JPS59201441A (ja) 1984-11-15
EP0124358A3 (en) 1986-03-26
EP0124358B1 (de) 1990-02-14

Similar Documents

Publication Publication Date Title
DE69013630T2 (de) Verfahren zum Verbinden von korrosionsbeständigen Werkstoffen durch Diffusion.
DE3483579D1 (de) Verfahren zum herstellen einer leiterbahn.
DE3579840D1 (de) Verfahren zum herstellen von kohlenstoffasern durch wachsen in der gasphase.
DE3685970T2 (de) Verfahren zum herstellen eines halbleiterbauelements.
DE3866427D1 (de) Verfahren zum betreiben eines ionenfallen-massenspektrometers.
DE3783593D1 (de) Verfahren zum betreiben eines analysiergeraets.
DE3774339D1 (de) Verfahren zum sandkonsolidieren durch verwendung von kautschuck.
DE3486267T2 (de) Verfahren zum dynamischen Aufruf eines Dienstprogramms von einem Anwendungsprogramm aus.
DE3586109D1 (de) Verfahren zum herstellen einer verbindungsstruktur von einer halbleiteranordnung.
DE3382669D1 (de) Verfahren zum vermindern der konvergenzzeit eines echokompensators.
DE3382563D1 (de) Verfahren zum unterscheiden zwischen komplexen zeichenvorraeten.
DE3484637D1 (de) Verfahren zur umwandlung eines eingangsbitstromes.
DE3671583D1 (de) Verfahren zum herstellen eines halbleiter-speicherbauelementes.
DE3579942D1 (de) Verfahren zum loesbarmachen von interferon.
AT383048B (de) Verfahren zum entfernen von sauren komponenten, einschliesslich von stickoxyden aus abgasen
DE3579770D1 (de) Verfahren zum herstellen eines eines verstaerkungsbauteils.
DE3863326D1 (de) Verfahren zum anfahren eines vergasers.
DE3485064D1 (de) Verfahren zur abtrennung eines chlortoluolisomers.
DE3586019D1 (de) Verfahren zum herstellen eines elektrostriktiven elementes.
DE3482504D1 (de) Verfahren zum nachweisen eines dreidiomensionellen werkzeugweges.
DE3382044D1 (de) Verfahren zur pruefung von freien liganden.
DE3584563D1 (de) Verfahren zur ausfuehrung eines loesungskonzentrationsprozesses.
DE3773869D1 (de) Verfahren zum eindampfen fotografischer ablaugen.
DE3773856D1 (de) Verfahren zum eindampfen fotografischer ablaugen.
DE3877601T2 (de) Verfahren zum herstellen eines supraleitenden drahtes.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee