DE3481148D1 - Verfahren zur herstellung von halbleiteranordnungen mittels einer behandlung mit hoher temperatur in einer oxydierenden atmosphaere. - Google Patents

Verfahren zur herstellung von halbleiteranordnungen mittels einer behandlung mit hoher temperatur in einer oxydierenden atmosphaere.

Info

Publication number
DE3481148D1
DE3481148D1 DE8484114427T DE3481148T DE3481148D1 DE 3481148 D1 DE3481148 D1 DE 3481148D1 DE 8484114427 T DE8484114427 T DE 8484114427T DE 3481148 T DE3481148 T DE 3481148T DE 3481148 D1 DE3481148 D1 DE 3481148D1
Authority
DE
Germany
Prior art keywords
oxyding
atmosphere
high temperature
producing semiconductor
treating high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484114427T
Other languages
German (de)
English (en)
Inventor
Henry John Geipel Jr
Charles Andrew Schaefer
Francis Roger White
John Michael Wursthorn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3481148D1 publication Critical patent/DE3481148D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/911—Differential oxidation and etching
DE8484114427T 1983-12-23 1984-11-30 Verfahren zur herstellung von halbleiteranordnungen mittels einer behandlung mit hoher temperatur in einer oxydierenden atmosphaere. Expired - Lifetime DE3481148D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/564,880 US4527325A (en) 1983-12-23 1983-12-23 Process for fabricating semiconductor devices utilizing a protective film during high temperature annealing

Publications (1)

Publication Number Publication Date
DE3481148D1 true DE3481148D1 (de) 1990-03-01

Family

ID=24256275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484114427T Expired - Lifetime DE3481148D1 (de) 1983-12-23 1984-11-30 Verfahren zur herstellung von halbleiteranordnungen mittels einer behandlung mit hoher temperatur in einer oxydierenden atmosphaere.

Country Status (4)

Country Link
US (1) US4527325A (https=)
EP (1) EP0158715B1 (https=)
JP (1) JPS60136319A (https=)
DE (1) DE3481148D1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3583472D1 (de) * 1984-08-28 1991-08-22 Toshiba Kawasaki Kk Verfahren zum herstellen einer halbleiteranordnung mit gateelektrode.
JP2644776B2 (ja) * 1987-11-02 1997-08-25 株式会社日立製作所 半導体装置及びその製造方法
US5252501A (en) * 1991-12-30 1993-10-12 Texas Instruments Incorporated Self-aligned single-mask CMOS/BiCMOS twin-well formation with flat surface topography
US5763302A (en) * 1995-06-07 1998-06-09 Lsi Logic Corporation Self-aligned twin well process
US5770492A (en) * 1995-06-07 1998-06-23 Lsi Logic Corporation Self-aligned twin well process
US5583062A (en) * 1995-06-07 1996-12-10 Lsi Logic Corporation Self-aligned twin well process having a SiO2 -polysilicon-SiO2 barrier mask
US5670393A (en) * 1995-07-12 1997-09-23 Lsi Logic Corporation Method of making combined metal oxide semiconductor and junction field effect transistor device
US5872052A (en) 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
US6297170B1 (en) 1998-06-23 2001-10-02 Vlsi Technology, Inc. Sacrificial multilayer anti-reflective coating for mos gate formation
US11791271B2 (en) * 2020-09-30 2023-10-17 Tokyo Electron Limited Monolithic formation of a set of interconnects below active devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921283A (en) * 1971-06-08 1975-11-25 Philips Corp Semiconductor device and method of manufacturing the device
US3999213A (en) * 1972-04-14 1976-12-21 U.S. Philips Corporation Semiconductor device and method of manufacturing the device
US3911168A (en) * 1973-06-01 1975-10-07 Fairchild Camera Instr Co Method for forming a continuous layer of silicon dioxide over a substrate
US3920481A (en) * 1974-06-03 1975-11-18 Fairchild Camera Instr Co Process for fabricating insulated gate field effect transistor structure
GB1559583A (en) * 1975-07-18 1980-01-23 Tokyo Shibaura Electric Co Complementary mosfet device and method of manufacturing the same
US4214917A (en) * 1978-02-10 1980-07-29 Emm Semi Process of forming a semiconductor memory cell with continuous polysilicon run circuit elements
JPS5693344A (en) * 1979-12-26 1981-07-28 Fujitsu Ltd Manufacture of semiconductor device
US4240845A (en) * 1980-02-04 1980-12-23 International Business Machines Corporation Method of fabricating random access memory device
US4398338A (en) * 1980-12-24 1983-08-16 Fairchild Camera & Instrument Corp. Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques
US4412375A (en) * 1982-06-10 1983-11-01 Intel Corporation Method for fabricating CMOS devices with guardband
GB2140202A (en) * 1983-05-16 1984-11-21 Philips Electronic Associated Methods of manufacturing semiconductor devices

Also Published As

Publication number Publication date
JPS60136319A (ja) 1985-07-19
US4527325A (en) 1985-07-09
EP0158715B1 (en) 1990-01-24
EP0158715A3 (en) 1986-07-16
JPH032338B2 (https=) 1991-01-14
EP0158715A2 (en) 1985-10-23

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee