AT380463B - Verfahren zur herstellung von silizium - Google Patents

Verfahren zur herstellung von silizium

Info

Publication number
AT380463B
AT380463B AT0788278A AT788278A AT380463B AT 380463 B AT380463 B AT 380463B AT 0788278 A AT0788278 A AT 0788278A AT 788278 A AT788278 A AT 788278A AT 380463 B AT380463 B AT 380463B
Authority
AT
Austria
Prior art keywords
producing silicon
silicon
producing
Prior art date
Application number
AT0788278A
Other languages
English (en)
Other versions
ATA788278A (de
Inventor
Didier Anglerot
Original Assignee
Rhone Poulenc Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rhone Poulenc Ind filed Critical Rhone Poulenc Ind
Publication of ATA788278A publication Critical patent/ATA788278A/de
Application granted granted Critical
Publication of AT380463B publication Critical patent/AT380463B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT0788278A 1977-11-04 1978-11-03 Verfahren zur herstellung von silizium AT380463B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7733170A FR2407892A1 (fr) 1977-11-04 1977-11-04 Procede de fabrication de silicium pour la conversion photovoltaique

Publications (2)

Publication Number Publication Date
ATA788278A ATA788278A (de) 1985-10-15
AT380463B true AT380463B (de) 1986-05-26

Family

ID=9197256

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0788278A AT380463B (de) 1977-11-04 1978-11-03 Verfahren zur herstellung von silizium

Country Status (11)

Country Link
US (1) US4225367A (de)
EP (1) EP0001942B1 (de)
JP (1) JPS5484824A (de)
AT (1) AT380463B (de)
AU (1) AU524166B2 (de)
BR (1) BR7807219A (de)
CA (1) CA1113686A (de)
DE (1) DE2860885D1 (de)
ES (1) ES474770A1 (de)
FR (1) FR2407892A1 (de)
IT (1) IT1106644B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4547259A (en) * 1981-03-10 1985-10-15 Silicon Electro-Physics, Inc. Manufacture of sheets of controlled thickness from meltable material
US4374163A (en) * 1981-09-29 1983-02-15 Westinghouse Electric Corp. Method of vapor deposition
US4603310A (en) * 1985-08-20 1986-07-29 The United States Of America As Represented By The Secretary Of The Air Force T-section digital phase shifter apparatus
JPS62213296A (ja) * 1986-03-14 1987-09-19 松下電器産業株式会社 部品供給方法
US5246734A (en) * 1986-05-05 1993-09-21 Dow Corning Corporation Amorphous silicon hermetic coatings for optical wave guides
US5326719A (en) * 1988-03-11 1994-07-05 Unisearch Limited Thin film growth using two part metal solvent
TW200700316A (en) * 2005-03-24 2007-01-01 Umicore Nv Process for the production of si by reduction of sicl4 with liquid zn
DE112006003557T5 (de) * 2005-12-27 2008-11-20 Sumitomo Chemical Co., Ltd. Verfahren zur Herstellung von polykristallinem Silicium
NO20071763L (no) 2007-04-02 2008-10-03 Norsk Hydro As Fremgangsmate og reaktor for produksjon av hoyrent silisium
CN102365234A (zh) * 2009-03-20 2012-02-29 波士顿硅材料有限公司 制造光伏级硅金属的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1241796A (en) * 1914-08-22 1917-10-02 Weaver Company Process of securing elements from their compounds.
US2773745A (en) * 1954-07-20 1956-12-11 Du Pont Process for the production of pure silicon in a coarse crystalline form
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
BE626462A (de) * 1961-12-26
US3346414A (en) * 1964-01-28 1967-10-10 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
US3525146A (en) * 1965-12-11 1970-08-25 Sanyo Electric Co Method of making semiconductor devices having crystal extensions for leads
US3580732A (en) * 1968-01-15 1971-05-25 Ibm Method of growing single crystals
US4058418A (en) * 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
FR2280427A1 (fr) * 1974-07-31 1976-02-27 Commissariat Energie Atomique Procede de fabrication d'un cristal par epitaxie sur un substrat metallique liquide
US3990914A (en) * 1974-09-03 1976-11-09 Sensor Technology, Inc. Tubular solar cell
US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon

Also Published As

Publication number Publication date
JPS5725488B2 (de) 1982-05-29
FR2407892A1 (fr) 1979-06-01
IT1106644B (it) 1985-11-11
BR7807219A (pt) 1979-06-12
AU4130178A (en) 1980-05-08
ATA788278A (de) 1985-10-15
US4225367A (en) 1980-09-30
DE2860885D1 (en) 1981-10-29
EP0001942A3 (en) 1979-05-30
EP0001942A2 (de) 1979-05-16
ES474770A1 (es) 1979-03-16
IT7851719A0 (it) 1978-10-31
AU524166B2 (en) 1982-09-02
FR2407892B1 (de) 1981-03-27
EP0001942B1 (de) 1981-07-29
CA1113686A (fr) 1981-12-08
JPS5484824A (en) 1979-07-06

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee