BE626462A - - Google Patents

Info

Publication number
BE626462A
BE626462A BE626462DA BE626462A BE 626462 A BE626462 A BE 626462A BE 626462D A BE626462D A BE 626462DA BE 626462 A BE626462 A BE 626462A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE626462A publication Critical patent/BE626462A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Glass Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE626462D 1961-12-26 BE626462A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US161992A US3139361A (en) 1961-12-26 1961-12-26 Method of forming single crystal films on a material in fluid form

Publications (1)

Publication Number Publication Date
BE626462A true BE626462A (de)

Family

ID=22583707

Family Applications (1)

Application Number Title Priority Date Filing Date
BE626462D BE626462A (de) 1961-12-26

Country Status (4)

Country Link
US (1) US3139361A (de)
BE (1) BE626462A (de)
GB (1) GB966464A (de)
NL (1) NL286877A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053046A (de) * 1963-02-25 1900-01-01
FR1370724A (fr) * 1963-07-15 1964-08-28 Electronique & Automatisme Sa Procédé de réalisation de couches minces monocristallines
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
US3337375A (en) * 1964-04-13 1967-08-22 Sprague Electric Co Semiconductor method and device
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
US3645785A (en) * 1969-11-12 1972-02-29 Texas Instruments Inc Ohmic contact system
US3770565A (en) * 1972-01-05 1973-11-06 Us Navy Plastic mounting of epitaxially grown iv-vi compound semiconducting films
US3941647A (en) * 1973-03-08 1976-03-02 Siemens Aktiengesellschaft Method of producing epitaxially semiconductor layers
US4058418A (en) * 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
US3993533A (en) * 1975-04-09 1976-11-23 Carnegie-Mellon University Method for making semiconductors for solar cells
FR2407892A1 (fr) * 1977-11-04 1979-06-01 Rhone Poulenc Ind Procede de fabrication de silicium pour la conversion photovoltaique
US4323419A (en) * 1980-05-08 1982-04-06 Atlantic Richfield Company Method for ribbon solar cell fabrication
US4374163A (en) * 1981-09-29 1983-02-15 Westinghouse Electric Corp. Method of vapor deposition
JP2018531395A (ja) * 2015-07-21 2018-10-25 フルイドセンス インターナショナル インコーポレイテッド 液体中または空気中の粒子検出システムおよび方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1141561A (fr) * 1956-01-20 1957-09-04 Cedel Procédé et moyens pour la fabrication de matériaux semi-conducteurs

Also Published As

Publication number Publication date
NL286877A (de)
GB966464A (en) 1964-08-12
US3139361A (en) 1964-06-30

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