DE3476564D1 - Semiconductor boule pulling rod - Google Patents

Semiconductor boule pulling rod

Info

Publication number
DE3476564D1
DE3476564D1 DE8484108743T DE3476564T DE3476564D1 DE 3476564 D1 DE3476564 D1 DE 3476564D1 DE 8484108743 T DE8484108743 T DE 8484108743T DE 3476564 T DE3476564 T DE 3476564T DE 3476564 D1 DE3476564 D1 DE 3476564D1
Authority
DE
Germany
Prior art keywords
pulling rod
semiconductor boule
boule
semiconductor
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484108743T
Other languages
English (en)
Inventor
Masayoshi C O Osaka Wo Tatsumi
Toshihiro C O Osaka Wor Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3476564D1 publication Critical patent/DE3476564D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8484108743T 1983-10-28 1984-07-24 Semiconductor boule pulling rod Expired DE3476564D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58203161A JPS6096596A (ja) 1983-10-28 1983-10-28 単結晶引上げ軸

Publications (1)

Publication Number Publication Date
DE3476564D1 true DE3476564D1 (en) 1989-03-09

Family

ID=16469445

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484108743T Expired DE3476564D1 (en) 1983-10-28 1984-07-24 Semiconductor boule pulling rod

Country Status (4)

Country Link
US (1) US4613486A (de)
EP (1) EP0144512B1 (de)
JP (1) JPS6096596A (de)
DE (1) DE3476564D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3414290A1 (de) * 1984-04-14 1985-10-24 Leybold-Heraeus GmbH, 5000 Köln Kristallhalter
US4963334A (en) * 1989-08-14 1990-10-16 The United States Of America As Represented By The Secretary Of The Air Force High temperature heat pipe coracle and process
US5394830A (en) * 1993-08-27 1995-03-07 General Electric Company Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process
JP3128795B2 (ja) * 1995-06-09 2001-01-29 信越半導体株式会社 チョクラルスキー法による結晶製造装置および製造方法
US8956455B2 (en) * 2007-02-13 2015-02-17 Siemens Medical Solutions Usa, Inc. Seed crystal holder for growing single crystal from melt
KR101068740B1 (ko) * 2008-10-24 2011-09-28 주식회사 엘지실트론 실리콘 단결정 잉곳 성장 장치의 시드척
WO2012173251A1 (ja) * 2011-06-17 2012-12-20 住友金属工業株式会社 ＳｉＣ単結晶の製造装置及び製造方法
JP6172169B2 (ja) * 2015-01-16 2017-08-02 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
CN104862776B (zh) * 2015-05-22 2017-12-29 内蒙古晶环电子材料有限公司 一种新型蓝宝石上轴冷却杆
CN112160021A (zh) * 2020-11-03 2021-01-01 广东先导先进材料股份有限公司 一种单晶晶片及其晶棒的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
DE1233828B (de) * 1964-07-03 1967-02-09 Wacker Chemie Gmbh Verfahren zur Herstellung, Reinigung und/oder Dotierung von ein- oder polykristallinen Halbleiterverbindungen
US3704093A (en) * 1970-06-15 1972-11-28 Little Inc A Method of synthesizing intermetallic compounds
US4187139A (en) * 1973-02-14 1980-02-05 U.S. Philips Corporation Growth of single crystal bismuth silicon oxide
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
JPS55158196A (en) * 1979-05-29 1980-12-09 Toshiba Corp Manufacture of single crystal
US4478676A (en) * 1982-09-07 1984-10-23 Litton Systems, Inc. Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials

Also Published As

Publication number Publication date
JPS6096596A (ja) 1985-05-30
EP0144512A1 (de) 1985-06-19
EP0144512B1 (de) 1989-02-01
US4613486A (en) 1986-09-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee