DE3468151D1 - Gate array type semiconductor integrated circuit device - Google Patents

Gate array type semiconductor integrated circuit device

Info

Publication number
DE3468151D1
DE3468151D1 DE8484306557T DE3468151T DE3468151D1 DE 3468151 D1 DE3468151 D1 DE 3468151D1 DE 8484306557 T DE8484306557 T DE 8484306557T DE 3468151 T DE3468151 T DE 3468151T DE 3468151 D1 DE3468151 D1 DE 3468151D1
Authority
DE
Germany
Prior art keywords
integrated circuit
type semiconductor
semiconductor integrated
circuit device
gate array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484306557T
Other languages
English (en)
Inventor
Yoshihisa Takayama
Shigeru Fujii
Tomoaki Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3468151D1 publication Critical patent/DE3468151D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8484306557T 1983-09-30 1984-09-26 Gate array type semiconductor integrated circuit device Expired DE3468151D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58182069A JPH0828480B2 (ja) 1983-09-30 1983-09-30 半導体集積回路装置

Publications (1)

Publication Number Publication Date
DE3468151D1 true DE3468151D1 (en) 1988-01-28

Family

ID=16111804

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484306557T Expired DE3468151D1 (en) 1983-09-30 1984-09-26 Gate array type semiconductor integrated circuit device

Country Status (5)

Country Link
US (1) US4701777A (de)
EP (1) EP0136880B1 (de)
JP (1) JPH0828480B2 (de)
KR (1) KR890003299B1 (de)
DE (1) DE3468151D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119936A (ja) * 1985-11-19 1987-06-01 Fujitsu Ltd コンプリメンタリ−ｌｓｉチツプ
US4884118A (en) * 1986-05-19 1989-11-28 Lsi Logic Corporation Double metal HCMOS compacted array
JPS62276852A (ja) * 1986-05-23 1987-12-01 Mitsubishi Electric Corp 半導体集積回路装置
US4791317A (en) * 1986-09-26 1988-12-13 Siemens Aktiengesellschaft Latch-up protection circuit for integrated circuits using complementary mos circuit technology
US4791316A (en) * 1986-09-26 1988-12-13 Siemens Aktiengesellschaft Latch-up protection circuit for integrated circuits using complementary MOS circuit technology
JPS63278248A (ja) * 1987-03-13 1988-11-15 Fujitsu Ltd ゲ−トアレイの基本セル
US5136355A (en) * 1987-11-25 1992-08-04 Marconi Electronic Devices Limited Interconnecting layer on a semiconductor substrate
US5025296A (en) * 1988-02-29 1991-06-18 Motorola, Inc. Center tapped FET
DE68929068T2 (de) * 1988-04-22 1999-12-23 Fujitsu Ltd., Kawasaki Integrierte Halbleiterschaltungsanordnung vom "Masterslice"-Typ
NL194182C (nl) * 1988-07-23 2001-08-03 Samsung Electronics Co Ltd Randloze moederschijf-halfgeleiderinrichting.
US4928160A (en) * 1989-01-17 1990-05-22 Ncr Corporation Gate isolated base cell structure with off-grid gate polysilicon pattern
DE69034088T2 (de) * 1989-04-19 2004-02-05 Seiko Epson Corp. Halbleiteranordnung
US5459340A (en) * 1989-10-03 1995-10-17 Trw Inc. Adaptive configurable gate array
US5217916A (en) * 1989-10-03 1993-06-08 Trw Inc. Method of making an adaptive configurable gate array
US5200917A (en) * 1991-11-27 1993-04-06 Micron Technology, Inc. Stacked printed circuit board device
US6262216B1 (en) 1998-10-13 2001-07-17 Affymetrix, Inc. Functionalized silicon compounds and methods for their synthesis and use
JP4517413B2 (ja) * 1999-01-13 2010-08-04 ソニー株式会社 半導体装置
JP4794030B2 (ja) * 2000-07-10 2011-10-12 ルネサスエレクトロニクス株式会社 半導体装置
US7102867B2 (en) 2003-06-30 2006-09-05 International Business Machines Corporation Method, apparatus and circuit for latchup suppression in a gate-array ASIC environment
JP5331195B2 (ja) * 2009-10-19 2013-10-30 パナソニック株式会社 半導体装置
KR20180068229A (ko) * 2016-12-13 2018-06-21 삼성전자주식회사 반도체 장치 및 이의 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955210A (en) * 1974-12-30 1976-05-04 International Business Machines Corporation Elimination of SCR structure
JPS5925381B2 (ja) * 1977-12-30 1984-06-16 富士通株式会社 半導体集積回路装置
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
JPS58210660A (ja) * 1982-06-01 1983-12-07 Seiko Epson Corp 半導体装置
EP0105985A1 (de) * 1982-10-12 1984-04-25 Mitsubishi Denki Kabushiki Kaisha Integrierter Schaltkreis mit komplementärem Isolierschicht-Feldeffekt-Halbleiterelement
JPS6017932A (ja) * 1983-07-09 1985-01-29 Fujitsu Ltd ゲ−ト・アレイ

Also Published As

Publication number Publication date
JPS6074648A (ja) 1985-04-26
EP0136880B1 (de) 1987-12-16
JPH0828480B2 (ja) 1996-03-21
EP0136880A1 (de) 1985-04-10
KR890003299B1 (en) 1989-09-06
US4701777A (en) 1987-10-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee