DE3435019A1 - Maskenringanordnung fuer roentgenstrahlenlithographie - Google Patents
Maskenringanordnung fuer roentgenstrahlenlithographieInfo
- Publication number
- DE3435019A1 DE3435019A1 DE19843435019 DE3435019A DE3435019A1 DE 3435019 A1 DE3435019 A1 DE 3435019A1 DE 19843435019 DE19843435019 DE 19843435019 DE 3435019 A DE3435019 A DE 3435019A DE 3435019 A1 DE3435019 A1 DE 3435019A1
- Authority
- DE
- Germany
- Prior art keywords
- mask ring
- elements
- mask
- round
- kinematic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001459 lithography Methods 0.000 title 1
- 238000001015 X-ray lithography Methods 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/568,776 US4534047A (en) | 1984-01-06 | 1984-01-06 | Mask ring assembly for X-ray lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3435019A1 true DE3435019A1 (de) | 1985-07-18 |
| DE3435019C2 DE3435019C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-26 |
Family
ID=24272694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843435019 Granted DE3435019A1 (de) | 1984-01-06 | 1984-09-24 | Maskenringanordnung fuer roentgenstrahlenlithographie |
Country Status (4)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4610020A (en) * | 1984-01-06 | 1986-09-02 | The Perkin-Elmer Corporation | X-ray mask ring and apparatus for making same |
| JPS62151783A (ja) * | 1985-12-26 | 1987-07-06 | 東芝機械株式会社 | 高精度移動テ−ブル装置 |
| US4758091A (en) * | 1986-11-20 | 1988-07-19 | Ateo Corporation | Pattern generator part holder |
| DE4242565C1 (de) * | 1992-12-16 | 1994-03-17 | Deutsche Aerospace | Verfahren zur Justage von Halbleiterscheiben zueinander |
| JP3244894B2 (ja) * | 1993-11-30 | 2002-01-07 | キヤノン株式会社 | マスク保持方法、マスク及びマスクチャック、ならびにこれを用いた露光装置とデバイス製造方法 |
| US5608773A (en) * | 1993-11-30 | 1997-03-04 | Canon Kabushiki Kaisha | Mask holding device, and an exposure apparatus and a device manufacturing method using the device |
| JP3278312B2 (ja) * | 1994-03-15 | 2002-04-30 | キヤノン株式会社 | マスク、マスク支持方法、マスク支持機構、並びにこれを用いた露光装置やデバイス製造方法 |
| US6109574A (en) * | 1996-01-05 | 2000-08-29 | Cymer, Inc. | Gas laser chamber/optics support structure |
| US5863017A (en) * | 1996-01-05 | 1999-01-26 | Cymer, Inc. | Stabilized laser platform and module interface |
| JP3243168B2 (ja) * | 1996-02-06 | 2002-01-07 | キヤノン株式会社 | 原版保持装置およびこれを用いた露光装置 |
| US6717159B2 (en) * | 2000-10-18 | 2004-04-06 | Nikon Corporation | Low distortion kinematic reticle support |
| US20030098965A1 (en) * | 2001-11-29 | 2003-05-29 | Mike Binnard | System and method for supporting a device holder with separate components |
| US20040080730A1 (en) * | 2002-10-29 | 2004-04-29 | Michael Binnard | System and method for clamping a device holder with reduced deformation |
| US20060016061A1 (en) * | 2004-07-22 | 2006-01-26 | Gad Shelef | Kinematic mounting system |
| US20060232837A1 (en) * | 2005-04-19 | 2006-10-19 | Gad Shelef | Reduced error kinematic mount |
| US7173779B2 (en) * | 2005-04-19 | 2007-02-06 | Gizmonies, Inc. | Kinematic mount having connectors with beveled edges |
| KR102499977B1 (ko) | 2016-07-13 | 2023-02-15 | 삼성전자주식회사 | 접착 테이프 부착 장치 및 이를 이용한 반도체 패키지의 제조 방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4335313A (en) * | 1980-05-12 | 1982-06-15 | The Perkin-Elmer Corporation | Method and apparatus for aligning an opaque mask with an integrated circuit wafer |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB922868A (en) * | 1958-10-13 | 1963-04-03 | Leonard David Evans | Accurate location systems for repetitive positioning in image reproduction processes |
| US3743842A (en) * | 1972-01-14 | 1973-07-03 | Massachusetts Inst Technology | Soft x-ray lithographic apparatus and process |
| US3892973A (en) * | 1974-02-15 | 1975-07-01 | Bell Telephone Labor Inc | Mask structure for X-ray lithography |
| US4085329A (en) * | 1976-05-03 | 1978-04-18 | Hughes Aircraft Company | Hard X-ray and fluorescent X-ray detection of alignment marks for precision mask alignment |
| US4037111A (en) * | 1976-06-08 | 1977-07-19 | Bell Telephone Laboratories, Incorporated | Mask structures for X-ray lithography |
| DE2723902C2 (de) * | 1977-05-26 | 1983-12-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Parallelausrichtung und Justierung der Lage einer Halbleiterscheibe relativ zu einer Bestrahlungsmaske bei der Röntgenstrahl-Fotolithografie |
| US4185202A (en) * | 1977-12-05 | 1980-01-22 | Bell Telephone Laboratories, Incorporated | X-ray lithography |
| US4215192A (en) * | 1978-01-16 | 1980-07-29 | The Perkin-Elmer Corporation | X-ray lithography apparatus and method of use |
| US4238682A (en) * | 1979-05-03 | 1980-12-09 | Bell Telephone Laboratories, Incorporated | High-power X-ray source |
| US4301237A (en) * | 1979-07-12 | 1981-11-17 | Western Electric Co., Inc. | Method for exposing substrates to X-rays |
-
1984
- 1984-01-06 US US06/568,776 patent/US4534047A/en not_active Expired - Fee Related
- 1984-09-24 DE DE19843435019 patent/DE3435019A1/de active Granted
- 1984-10-01 GB GB08424770A patent/GB2152704B/en not_active Expired
-
1985
- 1985-01-07 JP JP60000265A patent/JPS60160618A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4335313A (en) * | 1980-05-12 | 1982-06-15 | The Perkin-Elmer Corporation | Method and apparatus for aligning an opaque mask with an integrated circuit wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8424770D0 (en) | 1984-11-07 |
| US4534047A (en) | 1985-08-06 |
| JPS60160618A (ja) | 1985-08-22 |
| JPH0447452B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-08-04 |
| DE3435019C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-26 |
| GB2152704B (en) | 1987-04-23 |
| GB2152704A (en) | 1985-08-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: SVG LITHOGRAPHY SYSTEMS, INC., WILTON, CONN., US |
|
| 8128 | New person/name/address of the agent |
Representative=s name: GRUENECKER, A., DIPL.-ING. KINKELDEY, H., DIPL.-IN |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |