DE3425360C2 - - Google Patents
Info
- Publication number
- DE3425360C2 DE3425360C2 DE3425360A DE3425360A DE3425360C2 DE 3425360 C2 DE3425360 C2 DE 3425360C2 DE 3425360 A DE3425360 A DE 3425360A DE 3425360 A DE3425360 A DE 3425360A DE 3425360 C2 DE3425360 C2 DE 3425360C2
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- mask
- opaque
- reading device
- image reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 description 18
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000001680 brushing effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126317A JPS6018070A (ja) | 1983-07-11 | 1983-07-11 | 二次元画像読取素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3425360A1 DE3425360A1 (de) | 1985-01-31 |
| DE3425360C2 true DE3425360C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-02-04 |
Family
ID=14932191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843425360 Granted DE3425360A1 (de) | 1983-07-11 | 1984-07-10 | Zweidimensionale bildauslesevorrichtung |
Country Status (4)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113587A (ja) * | 1983-11-24 | 1985-06-20 | Sharp Corp | ２次元画像読取装置 |
| JPH0763085B2 (ja) * | 1986-01-20 | 1995-07-05 | 日本電気株式会社 | 固体撮像素子 |
| JP2890553B2 (ja) * | 1989-11-24 | 1999-05-17 | 株式会社島津製作所 | Ｘ線像撮像装置 |
| JPH03209769A (ja) * | 1990-01-11 | 1991-09-12 | Mitsubishi Electric Corp | 赤外線イメージセンサ |
| US5391868A (en) * | 1993-03-09 | 1995-02-21 | Santa Barbara Research Center | Low power serial bias photoconductive detectors |
| US7816655B1 (en) * | 2004-05-21 | 2010-10-19 | Kla-Tencor Technologies Corporation | Reflective electron patterning device and method of using same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52144992A (en) * | 1976-05-28 | 1977-12-02 | Hitachi Ltd | Light receiving element |
| US4247874A (en) * | 1978-09-28 | 1981-01-27 | Northern Telecom Limited | Photoconductor device for imaging a linear object |
| FR2464563A1 (fr) * | 1979-08-31 | 1981-03-06 | Thomson Csf | Dispositif photodetecteur a semi-conducteur et procede de fabrication, et analyseur d'image comportant un tel dispositif |
| JPS5793775A (en) * | 1980-12-04 | 1982-06-10 | Fuji Xerox Co Ltd | One-dimensional scanner |
-
1983
- 1983-07-11 JP JP58126317A patent/JPS6018070A/ja active Pending
-
1984
- 1984-07-10 US US06/629,339 patent/US4641359A/en not_active Expired - Fee Related
- 1984-07-10 DE DE19843425360 patent/DE3425360A1/de active Granted
- 1984-07-10 GB GB08417599A patent/GB2143676B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3425360A1 (de) | 1985-01-31 |
| JPS6018070A (ja) | 1985-01-30 |
| GB2143676A (en) | 1985-02-13 |
| GB2143676B (en) | 1987-02-25 |
| US4641359A (en) | 1987-02-03 |
| GB8417599D0 (en) | 1984-08-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |