DE3380002D1 - A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate - Google Patents

A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate

Info

Publication number
DE3380002D1
DE3380002D1 DE8383301239T DE3380002T DE3380002D1 DE 3380002 D1 DE3380002 D1 DE 3380002D1 DE 8383301239 T DE8383301239 T DE 8383301239T DE 3380002 T DE3380002 T DE 3380002T DE 3380002 D1 DE3380002 D1 DE 3380002D1
Authority
DE
Germany
Prior art keywords
manufacturing
forming
field region
semiconductor device
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383301239T
Other languages
German (de)
English (en)
Inventor
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3380002D1 publication Critical patent/DE3380002D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
DE8383301239T 1982-03-26 1983-03-08 A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate Expired DE3380002D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57048573A JPS58165341A (ja) 1982-03-26 1982-03-26 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE3380002D1 true DE3380002D1 (en) 1989-07-06

Family

ID=12807132

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383301239T Expired DE3380002D1 (en) 1982-03-26 1983-03-08 A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate

Country Status (4)

Country Link
US (1) US4532696A (enFirst)
EP (1) EP0090520B1 (enFirst)
JP (1) JPS58165341A (enFirst)
DE (1) DE3380002D1 (enFirst)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491486A (en) * 1981-09-17 1985-01-01 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
JPS59123266A (ja) * 1982-12-28 1984-07-17 Toshiba Corp Ｍｉｓトランジスタ及びその製造方法
FR2568723B1 (fr) * 1984-08-03 1987-06-05 Commissariat Energie Atomique Circuit integre notamment de type mos et son procede de fabrication
US4599136A (en) * 1984-10-03 1986-07-08 International Business Machines Corporation Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials
US4656730A (en) * 1984-11-23 1987-04-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating CMOS devices
DE3650638T2 (de) * 1985-03-22 1998-02-12 Nippon Electric Co Integrierte Halbleiterschaltung mit Isolationszone
US4753901A (en) * 1985-11-15 1988-06-28 Ncr Corporation Two mask technique for planarized trench oxide isolation of integrated devices
JPS62142318A (ja) * 1985-12-17 1987-06-25 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0770713B2 (ja) * 1987-02-12 1995-07-31 松下電器産業株式会社 Ｍｏｓ型半導体装置及びその製造方法
US4839311A (en) * 1987-08-14 1989-06-13 National Semiconductor Corporation Etch back detection
JPH0358484A (ja) * 1989-07-27 1991-03-13 Toshiba Corp 半導体装置とその製造方法
JPH05226466A (ja) * 1992-02-10 1993-09-03 Nec Corp 半導体装置の製造方法
JPH06177239A (ja) * 1992-07-30 1994-06-24 Nec Corp トレンチ素子分離構造の製造方法
TW299475B (enFirst) * 1993-03-30 1997-03-01 Siemens Ag
US5849621A (en) 1996-06-19 1998-12-15 Advanced Micro Devices, Inc. Method and structure for isolating semiconductor devices after transistor formation
US6069055A (en) * 1996-07-12 2000-05-30 Matsushita Electric Industrial Co., Ltd. Fabricating method for semiconductor device
US6693331B2 (en) 1999-11-18 2004-02-17 Intel Corporation Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation
US7491614B2 (en) * 2005-01-13 2009-02-17 International Business Machines Corporation Methods for forming channel stop for deep trench isolation prior to deep trench etch
KR100672156B1 (ko) * 2005-05-11 2007-01-19 주식회사 하이닉스반도체 반도체 소자의 소자분리막 및 이의 형성방법
KR100844228B1 (ko) * 2008-02-26 2008-07-04 광주과학기술원 염모제 조성물 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE158928C (enFirst) * 1966-09-26
US4394196A (en) * 1980-07-16 1983-07-19 Tokyo Shibaura Denki Kabushiki Kaisha Method of etching, refilling and etching dielectric grooves for isolating micron size device regions
EP0055521B1 (en) * 1980-11-29 1985-05-22 Kabushiki Kaisha Toshiba Method of filling a groove in a semiconductor substrate
US4415371A (en) * 1980-12-29 1983-11-15 Rockwell International Corporation Method of making sub-micron dimensioned NPN lateral transistor
JPS58132946A (ja) * 1982-02-03 1983-08-08 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0090520A3 (en) 1985-11-06
EP0090520A2 (en) 1983-10-05
JPS58165341A (ja) 1983-09-30
EP0090520B1 (en) 1989-05-31
US4532696A (en) 1985-08-06
JPS6412110B2 (enFirst) 1989-02-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee