DE3379604D1 - Electron beam lithograph proximity correction method - Google Patents

Electron beam lithograph proximity correction method

Info

Publication number
DE3379604D1
DE3379604D1 DE8383109313T DE3379604T DE3379604D1 DE 3379604 D1 DE3379604 D1 DE 3379604D1 DE 8383109313 T DE8383109313 T DE 8383109313T DE 3379604 T DE3379604 T DE 3379604T DE 3379604 D1 DE3379604 D1 DE 3379604D1
Authority
DE
Germany
Prior art keywords
electron beam
correction method
proximity correction
beam lithograph
lithograph
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383109313T
Other languages
English (en)
Inventor
Fletcher Jones
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3379604D1 publication Critical patent/DE3379604D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
DE8383109313T 1982-11-03 1983-09-20 Electron beam lithograph proximity correction method Expired DE3379604D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/439,241 US4520269A (en) 1982-11-03 1982-11-03 Electron beam lithography proximity correction method

Publications (1)

Publication Number Publication Date
DE3379604D1 true DE3379604D1 (en) 1989-05-18

Family

ID=23743900

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383109313T Expired DE3379604D1 (en) 1982-11-03 1983-09-20 Electron beam lithograph proximity correction method

Country Status (4)

Country Link
US (1) US4520269A (de)
EP (1) EP0110042B1 (de)
JP (1) JPS5984518A (de)
DE (1) DE3379604D1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4812962A (en) * 1987-04-09 1989-03-14 Harris Corp. Area feature sorting mechanism for neighborhood-based proximity correction in lithography processing of integrated circuit patterns
US4943729A (en) * 1987-12-18 1990-07-24 Hitachi, Ltd. Electron beam lithography system
JPH02210814A (ja) * 1989-02-10 1990-08-22 Fujitsu Ltd 半導体装置の製造方法
US5182718A (en) * 1989-04-04 1993-01-26 Matsushita Electric Industrial Co., Ltd. Method and apparatus for writing a pattern on a semiconductor sample based on a resist pattern corrected for proximity effects resulting from direct exposure of the sample by a charged-particle beam or light
JPH03174716A (ja) * 1989-08-07 1991-07-29 Hitachi Ltd 電子ビーム描画装置および描画方式
JP2834797B2 (ja) * 1989-10-25 1998-12-14 株式会社リコー 薄膜形成装置
EP0433467B1 (de) * 1989-12-18 1995-08-16 International Business Machines Corporation Verfahren zur Herstellung von komplementären Mustern zur Exposition von Halbleiterkörpern mit selbsttragenden Masken
US4998020A (en) * 1990-03-28 1991-03-05 Matsushita Electric Industrial Co., Ltd. Electron beam exposure evaluation method
US5051598A (en) * 1990-09-12 1991-09-24 International Business Machines Corporation Method for correcting proximity effects in electron beam lithography
JPH04137520A (ja) * 1990-09-28 1992-05-12 Hitachi Ltd 電子線描画装置および描画方法
IL97021A0 (en) * 1991-01-24 1992-03-29 Ibm Israel Partitioning method for e-beam lithography
IL97022A0 (en) * 1991-01-24 1992-03-29 Ibm Israel Partitioning method for e-beam lithography
US6109775A (en) * 1991-07-19 2000-08-29 Lsi Logic Corporation Method for adjusting the density of lines and contact openings across a substrate region for improving the chemical-mechanical polishing of a thin-film later disposed thereon
US5379233A (en) * 1991-07-19 1995-01-03 Lsi Logic Corporation Method and structure for improving patterning design for processing
JP2842737B2 (ja) * 1991-08-08 1999-01-06 富士通株式会社 電子ビーム露光方法
US5242770A (en) * 1992-01-16 1993-09-07 Microunity Systems Engineering, Inc. Mask for photolithography
US5294800A (en) * 1992-07-31 1994-03-15 International Business Machines Corporation E-beam control data compaction system and method
JPH06333796A (ja) * 1993-05-20 1994-12-02 Fujitsu Ltd 露光データ処理方法及び装置
JPH0786124A (ja) * 1993-09-09 1995-03-31 Fujitsu Ltd 電子ビーム露光装置及び電子ビーム露光方法
US5682323A (en) 1995-03-06 1997-10-28 Lsi Logic Corporation System and method for performing optical proximity correction on macrocell libraries
US5553273A (en) * 1995-04-17 1996-09-03 International Business Machines Corporation Vertex minimization in a smart optical proximity correction system
JP3311244B2 (ja) * 1996-07-15 2002-08-05 株式会社東芝 基本セルライブラリ及びその形成方法
US5780208A (en) * 1996-10-17 1998-07-14 Vlsi Technology, Inc. Method and mask design to minimize reflective notching effects
US5825040A (en) * 1996-12-23 1998-10-20 The United States Of America As Represented By The Secretary Of The Navy Bright beam method for super-resolution in e-beam lithography
US6499003B2 (en) * 1998-03-03 2002-12-24 Lsi Logic Corporation Method and apparatus for application of proximity correction with unitary segmentation
US6189136B1 (en) * 1998-07-20 2001-02-13 Philips Electronics, North America Corp. Design level optical proximity correction methods
JP3301400B2 (ja) * 1999-01-22 2002-07-15 日本電気株式会社 パターン描画用データ作成方法
US6316164B1 (en) 1999-03-16 2001-11-13 N. William Parker Proximity effect correction method through uniform removal of fraction of interior pixels
US6436607B1 (en) * 2000-03-02 2002-08-20 Applied Materials, Inc. Border modification for proximity effect correction in lithography
US6528934B1 (en) 2000-05-30 2003-03-04 Chunghwa Picture Tubes Ltd. Beam forming region for electron gun
US6557162B1 (en) * 2000-09-29 2003-04-29 Numerical Technologies, Inc. Method for high yield reticle formation
US6596444B2 (en) 2000-12-15 2003-07-22 Dupont Photomasks, Inc. Photomask and method for correcting feature size errors on the same
US6792592B2 (en) 2002-08-30 2004-09-14 Numerical Technologies, Inc. Considering mask writer properties during the optical proximity correction process
JP4942050B2 (ja) * 2008-10-03 2012-05-30 ヤマウチマテックス株式会社 眼鏡用リム
DE102010004939A1 (de) * 2010-01-18 2011-07-21 EQUIcon Software GmbH Jena, 07745 Verfahren zur Steuerung der Elektronenstrahl-Belichtung von Wafern und Masken mit Proximity-Korrektur
US8539392B2 (en) 2011-02-24 2013-09-17 National Taiwan University Method for compensating proximity effects of particle beam lithography processes
DE102012013420A1 (de) * 2012-07-03 2014-01-09 Equicon Software Gmbh Verfahren zur Dosissteuerung für Elektronenstrahl-Belichtungsanlagen
US9952500B2 (en) 2016-08-17 2018-04-24 Globalfoundries Inc. Adjusting of patterns in design layout for optical proximity correction
TWI620996B (zh) 2016-11-30 2018-04-11 國立臺灣大學 電子束微影方法及其系統

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148365A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Electron beam exposure method
JPS5541785A (en) * 1978-09-20 1980-03-24 Fujitsu Ltd Pattern exposing method
JPS5556629A (en) * 1978-10-21 1980-04-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Pattern forming method
US4264711A (en) * 1979-12-10 1981-04-28 Burroughs Corporation Method of compensating for proximity effects in electron-beam lithography
JPS5712520A (en) * 1980-06-26 1982-01-22 Nippon Telegr & Teleph Corp <Ntt> Dividing method of figure by exposing in electron beam radiation
EP0043863B1 (de) * 1980-07-10 1984-05-16 International Business Machines Corporation Verfahren zur Kompensation des Proximity Effekts bei Elektronenstrahl-Projektionsanlagen
JPS5745261A (en) * 1980-08-29 1982-03-15 Mitsubishi Electric Corp Forming method for pattern
JPS57103318A (en) * 1980-12-18 1982-06-26 Mitsubishi Electric Corp Method for patterning
JPS5861628A (ja) * 1981-10-08 1983-04-12 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム露光における近接効果補正方法

Also Published As

Publication number Publication date
JPH056339B2 (de) 1993-01-26
US4520269A (en) 1985-05-28
JPS5984518A (ja) 1984-05-16
EP0110042A3 (en) 1986-09-17
EP0110042A2 (de) 1984-06-13
EP0110042B1 (de) 1989-04-12

Similar Documents

Publication Publication Date Title
DE3379604D1 (en) Electron beam lithograph proximity correction method
DE3067832D1 (en) Process for compensating the proximity effect in electron beam projection devices
AU577640B2 (en) Electron beam lithography
EP0113168A3 (en) Electron beam window
GB8308260D0 (en) Electron beam apparatus
DE3377177D1 (en) Electron beam exposure system
GB2099626B (en) Electron beam blanker
EP0146383A3 (en) Apparatus for forming electron beams
DE3377549D1 (en) Electron beam exposure apparatus
DE3279316D1 (en) Electron beam exposing method
GB8319949D0 (en) Electron beam lithography
GB8304935D0 (en) Electron beam focussing
GB2153140B (en) Apparatus for forming electron beams
DE3279954D1 (en) Exposure method with electron beam exposure apparatus
DE3172441D1 (en) Electron beam exposure system
DE3380719D1 (en) Electron beam exposure apparatus
DE3066694D1 (en) Method of electron beam exposure
DE3063103D1 (en) Electron beam exposure method
DE3173312D1 (en) Electron beam exposure system
GB2127588B (en) Electron beam scanning control
DE3380504D1 (en) Electron beam apparatus
EP0097903A3 (en) Method of electron beam exposure
GB8422895D0 (en) Electron beam apparatus
GB2173945B (en) Scanning electron beam apparatus
GB2081929B (en) Electron beam exposure apparatus

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee