DE3342046C2 - - Google Patents
Info
- Publication number
- DE3342046C2 DE3342046C2 DE3342046A DE3342046A DE3342046C2 DE 3342046 C2 DE3342046 C2 DE 3342046C2 DE 3342046 A DE3342046 A DE 3342046A DE 3342046 A DE3342046 A DE 3342046A DE 3342046 C2 DE3342046 C2 DE 3342046C2
- Authority
- DE
- Germany
- Prior art keywords
- magazines
- gas
- treatment zones
- silicon semiconductor
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 238000010926 purge Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000002360 explosive Substances 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 244000144619 Abrus precatorius Species 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000001816 cooling Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Furnace Details (AREA)
- Tunnel Furnaces (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19833342046 DE3342046A1 (de) | 1983-08-19 | 1983-11-22 | Vorrichtung zur stabilen verankerung von schichten auf grossflaechigen halbleiterbauelementen |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19833329923 DE3329923A1 (de) | 1983-08-19 | 1983-08-19 | Vorrichtung zur stabilen verankerung von schichten auf grossflaechigen halbleiterbauelementen |
DE19833342046 DE3342046A1 (de) | 1983-08-19 | 1983-11-22 | Vorrichtung zur stabilen verankerung von schichten auf grossflaechigen halbleiterbauelementen |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3342046A1 DE3342046A1 (de) | 1985-05-30 |
DE3342046C2 true DE3342046C2 (enrdf_load_stackoverflow) | 1988-11-10 |
Family
ID=25813318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19833342046 Granted DE3342046A1 (de) | 1983-08-19 | 1983-11-22 | Vorrichtung zur stabilen verankerung von schichten auf grossflaechigen halbleiterbauelementen |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3342046A1 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006051557A1 (de) * | 2006-11-02 | 2008-05-08 | Manz Automation Ag | Trocknungsanlage zur Trocknung von Solarzellen |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3901042A1 (de) * | 1989-01-14 | 1990-07-26 | Nukem Gmbh | Verfahren und vorrichtung zur herstellung eines halbleiter-schichtsystems |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3004606A1 (de) * | 1980-02-08 | 1981-08-13 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zum einbrennen von dickschicht-nichtedelmetall-pasten und vorrichtung zur durchfuehrung des verfahrens |
DE3329923A1 (de) * | 1983-08-19 | 1985-02-28 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Vorrichtung zur stabilen verankerung von schichten auf grossflaechigen halbleiterbauelementen |
-
1983
- 1983-11-22 DE DE19833342046 patent/DE3342046A1/de active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006051557A1 (de) * | 2006-11-02 | 2008-05-08 | Manz Automation Ag | Trocknungsanlage zur Trocknung von Solarzellen |
Also Published As
Publication number | Publication date |
---|---|
DE3342046A1 (de) | 1985-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AF | Is addition to no. |
Ref country code: DE Ref document number: 3329923 Format of ref document f/p: P |
|
8110 | Request for examination paragraph 44 | ||
AF | Is addition to no. |
Ref country code: DE Ref document number: 3329923 Format of ref document f/p: P |
|
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: TELEFUNKEN SYSTEMTECHNIK GMBH, 7900 ULM, DE |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8340 | Patent of addition ceased/non-payment of fee of main patent |