DE3329467C2 - - Google Patents

Info

Publication number
DE3329467C2
DE3329467C2 DE19833329467 DE3329467A DE3329467C2 DE 3329467 C2 DE3329467 C2 DE 3329467C2 DE 19833329467 DE19833329467 DE 19833329467 DE 3329467 A DE3329467 A DE 3329467A DE 3329467 C2 DE3329467 C2 DE 3329467C2
Authority
DE
Germany
Prior art keywords
layer
diffusion region
semiconductor
active layer
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19833329467
Other languages
German (de)
English (en)
Other versions
DE3329467A1 (de
Inventor
Akiro Hirakata Osaka Jp Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14180782A external-priority patent/JPS5932188A/ja
Priority claimed from JP23392482A external-priority patent/JPS59117187A/ja
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Publication of DE3329467A1 publication Critical patent/DE3329467A1/de
Application granted granted Critical
Publication of DE3329467C2 publication Critical patent/DE3329467C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE19833329467 1982-08-16 1983-08-16 Halbleiterlaser Granted DE3329467A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14180782A JPS5932188A (ja) 1982-08-16 1982-08-16 ビ−ム走査形半導体レ−ザ
JP23392482A JPS59117187A (ja) 1982-12-23 1982-12-23 光分岐用半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE3329467A1 DE3329467A1 (de) 1984-02-16
DE3329467C2 true DE3329467C2 (enrdf_load_stackoverflow) 1987-11-26

Family

ID=26473975

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19833348097 Expired DE3348097C2 (enrdf_load_stackoverflow) 1982-08-16 1983-08-16
DE19833329467 Granted DE3329467A1 (de) 1982-08-16 1983-08-16 Halbleiterlaser

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19833348097 Expired DE3348097C2 (enrdf_load_stackoverflow) 1982-08-16 1983-08-16

Country Status (2)

Country Link
DE (2) DE3348097C2 (enrdf_load_stackoverflow)
GB (1) GB2127218B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821775A1 (de) * 1988-06-28 1990-01-11 Siemens Ag Halbleiterschichtstruktur fuer laserdiode mit vergrabener heterostruktur
DE4107850B4 (de) * 1990-03-10 2006-06-29 Daimlerchrysler Ag Anordnung zur Verbesserung der Sicht, insbesondere in Fahrzeugen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
GB1494518A (en) * 1975-02-04 1977-12-07 Standard Telephones Cables Ltd Heterostructure lasers
JPS55165691A (en) * 1979-06-13 1980-12-24 Nec Corp Compound semiconductor laser element
US4280108A (en) * 1979-07-12 1981-07-21 Xerox Corporation Transverse junction array laser
JPS575384A (en) * 1980-06-13 1982-01-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof

Also Published As

Publication number Publication date
GB8321788D0 (en) 1983-09-14
DE3348097C2 (enrdf_load_stackoverflow) 1989-03-30
GB2127218A (en) 1984-04-04
GB2127218B (en) 1986-05-21
DE3329467A1 (de) 1984-02-16
DE3348097A1 (enrdf_load_stackoverflow) 1986-10-02

Similar Documents

Publication Publication Date Title
DE3787769T2 (de) Halbleiterlaservorrichtung.
DE3924197C2 (de) Halbleiterlaser
DE2165006C3 (de) Halbleiterlaser
DE2856507C2 (enrdf_load_stackoverflow)
DE2710813A1 (de) Heterostruktur-halbleiterlaser
DE3687102T2 (de) Halbleiterlaser.
DE3919462A1 (de) Mehrfach-halbleiterlaser und verfahren zu seiner herstellung
DE2643503B2 (de) Verfahren zur Herstellung eines Injektionslasers
DE69707390T2 (de) Strahlungsemittierende halbleiterdiode und deren herstellungsverfahren
DE69118113T2 (de) Optische Halbleiteranordnung und ihr Herstellungsverfahren
DE2425363A1 (de) Halbleiterinjektionslaser
DE4116530A1 (de) Laserdiodenaufbau und verfahren zur herstellung desselben
DE4002970C2 (enrdf_load_stackoverflow)
EP0383958A1 (de) Abstimmbarer Halbleiterlaser
DE3805088C2 (enrdf_load_stackoverflow)
DE3714512A1 (de) Halbleiterlaser
CH617540A5 (enrdf_load_stackoverflow)
DE3788841T2 (de) Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.
DE3329467C2 (enrdf_load_stackoverflow)
DE2627355B2 (de) Lichtemittierende Festkörpervorrichtung und Verfahren zu deren Herstellung
DE2942508A1 (de) Lichtemittierende diode und verfahren zu ihrer herstellung
DE3150540A1 (de) Halbleiterinjektionslaser
DE3046238C2 (enrdf_load_stackoverflow)
WO2020156775A1 (de) Vorrichtung zur erzeugung von laserstrahlung
DE69205160T2 (de) Optoelektronische vorrichtung mit einer sehr niedrigen parasitischen kapazitat und verfahren zu ihrer herstellung.

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8172 Supplementary division/partition in:

Ref country code: DE

Ref document number: 3348097

Format of ref document f/p: P

Q171 Divided out to:

Ref document number: 3348097

Ref country code: DE

AH Division in

Ref country code: DE

Ref document number: 3348097

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
AH Division in

Ref country code: DE

Ref document number: 3348097

Format of ref document f/p: P

8339 Ceased/non-payment of the annual fee