DE3348097C2 - - Google Patents

Info

Publication number
DE3348097C2
DE3348097C2 DE19833348097 DE3348097A DE3348097C2 DE 3348097 C2 DE3348097 C2 DE 3348097C2 DE 19833348097 DE19833348097 DE 19833348097 DE 3348097 A DE3348097 A DE 3348097A DE 3348097 C2 DE3348097 C2 DE 3348097C2
Authority
DE
Germany
Prior art keywords
semiconductor laser
semiconductor
laser array
layers
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19833348097
Other languages
German (de)
English (en)
Other versions
DE3348097A1 (enrdf_load_stackoverflow
Inventor
Akira Hirakata Osaka Jp Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14180782A external-priority patent/JPS5932188A/ja
Priority claimed from JP23392482A external-priority patent/JPS59117187A/ja
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Publication of DE3348097A1 publication Critical patent/DE3348097A1/de
Application granted granted Critical
Publication of DE3348097C2 publication Critical patent/DE3348097C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE19833348097 1982-08-16 1983-08-16 Expired DE3348097C2 (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14180782A JPS5932188A (ja) 1982-08-16 1982-08-16 ビ−ム走査形半導体レ−ザ
JP23392482A JPS59117187A (ja) 1982-12-23 1982-12-23 光分岐用半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE3348097A1 DE3348097A1 (enrdf_load_stackoverflow) 1986-10-02
DE3348097C2 true DE3348097C2 (enrdf_load_stackoverflow) 1989-03-30

Family

ID=26473975

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19833348097 Expired DE3348097C2 (enrdf_load_stackoverflow) 1982-08-16 1983-08-16
DE19833329467 Granted DE3329467A1 (de) 1982-08-16 1983-08-16 Halbleiterlaser

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19833329467 Granted DE3329467A1 (de) 1982-08-16 1983-08-16 Halbleiterlaser

Country Status (2)

Country Link
DE (2) DE3348097C2 (enrdf_load_stackoverflow)
GB (1) GB2127218B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4137550B4 (de) * 1990-03-10 2007-05-24 Daimlerchrysler Ag Anordnung zur Verbesserung der Sicht, insbesondere in Fahrzeugen

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821775A1 (de) * 1988-06-28 1990-01-11 Siemens Ag Halbleiterschichtstruktur fuer laserdiode mit vergrabener heterostruktur

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
GB1494518A (en) * 1975-02-04 1977-12-07 Standard Telephones Cables Ltd Heterostructure lasers
JPS55165691A (en) * 1979-06-13 1980-12-24 Nec Corp Compound semiconductor laser element
US4280108A (en) * 1979-07-12 1981-07-21 Xerox Corporation Transverse junction array laser
JPS575384A (en) * 1980-06-13 1982-01-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4137550B4 (de) * 1990-03-10 2007-05-24 Daimlerchrysler Ag Anordnung zur Verbesserung der Sicht, insbesondere in Fahrzeugen

Also Published As

Publication number Publication date
GB8321788D0 (en) 1983-09-14
GB2127218A (en) 1984-04-04
GB2127218B (en) 1986-05-21
DE3329467A1 (de) 1984-02-16
DE3329467C2 (enrdf_load_stackoverflow) 1987-11-26
DE3348097A1 (enrdf_load_stackoverflow) 1986-10-02

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