DE3317269A1 - Duennschicht-solarzellenanordnung - Google Patents
Duennschicht-solarzellenanordnungInfo
- Publication number
- DE3317269A1 DE3317269A1 DE19833317269 DE3317269A DE3317269A1 DE 3317269 A1 DE3317269 A1 DE 3317269A1 DE 19833317269 DE19833317269 DE 19833317269 DE 3317269 A DE3317269 A DE 3317269A DE 3317269 A1 DE3317269 A1 DE 3317269A1
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- cell arrangement
- arrangement according
- tetrafluoroethylene
- copolymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- 229920002313 fluoropolymer Polymers 0.000 claims abstract description 7
- 239000002985 plastic film Substances 0.000 claims abstract description 6
- 229920006255 plastic film Polymers 0.000 claims abstract description 6
- 230000003595 spectral effect Effects 0.000 claims abstract description 4
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 16
- -1 polytetrafluoroethylene Polymers 0.000 claims description 15
- 229920001577 copolymer Polymers 0.000 claims description 14
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 claims description 11
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 9
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 8
- 239000005977 Ethylene Substances 0.000 claims description 8
- 239000000178 monomer Substances 0.000 claims description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 5
- BZPCMSSQHRAJCC-UHFFFAOYSA-N 1,2,3,3,4,4,5,5,5-nonafluoro-1-(1,2,3,3,4,4,5,5,5-nonafluoropent-1-enoxy)pent-1-ene Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)=C(F)OC(F)=C(F)C(F)(F)C(F)(F)C(F)(F)F BZPCMSSQHRAJCC-UHFFFAOYSA-N 0.000 claims description 5
- 239000004811 fluoropolymer Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000003014 reinforcing effect Effects 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- DAVCAHWKKDIRLY-UHFFFAOYSA-N 1-ethenoxy-1,1,2,2,3,3,3-heptafluoropropane Chemical class FC(F)(F)C(F)(F)C(F)(F)OC=C DAVCAHWKKDIRLY-UHFFFAOYSA-N 0.000 claims description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims description 2
- 229920001519 homopolymer Polymers 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims description 2
- 229920001567 vinyl ester resin Polymers 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 239000000463 material Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229920002620 polyvinyl fluoride Polymers 0.000 description 5
- 239000011888 foil Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 3
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 3
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 229920001780 ECTFE Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833317269 DE3317269A1 (de) | 1983-05-11 | 1983-05-11 | Duennschicht-solarzellenanordnung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833317269 DE3317269A1 (de) | 1983-05-11 | 1983-05-11 | Duennschicht-solarzellenanordnung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3317269A1 true DE3317269A1 (de) | 1984-12-13 |
| DE3317269C2 DE3317269C2 (OSRAM) | 1991-06-13 |
Family
ID=6198776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833317269 Granted DE3317269A1 (de) | 1983-05-11 | 1983-05-11 | Duennschicht-solarzellenanordnung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3317269A1 (OSRAM) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4686322A (en) * | 1985-08-12 | 1987-08-11 | Rca Corporation | Solar panel |
| DE3639676A1 (de) * | 1986-06-19 | 1987-12-23 | Teijin Ltd | Solarzellenmodul |
| DE3626450A1 (de) * | 1986-08-05 | 1988-02-11 | Hans Joachim Dipl P Kirschning | Als solarzelle wirkendes bauteil von bauwerken und gebaeuden |
| EP0246027A3 (en) * | 1986-05-14 | 1989-02-22 | Siemens Solar Industries L.P. | Flexible photovoltaic device |
| EP0641030A3 (en) * | 1993-08-31 | 1996-02-28 | Canon Kk | Photoelectric conversion device and photoelectric conversion module, each with a protective element made of fluorine-containing polymer resin. |
| EP0625802A3 (en) * | 1993-05-18 | 1997-05-28 | Canon Kk | Solar cell module and installation method thereof. |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3658596A (en) * | 1970-09-21 | 1972-04-25 | Lockheed Missiles Space | Flexible solar cell modular assembly |
| US3912540A (en) * | 1971-06-21 | 1975-10-14 | Nasa | Covered silicon solar cells and method of manufacture |
| US3996067A (en) * | 1975-12-30 | 1976-12-07 | The United States Of America As Represented By The National Aeronautics And Space Administration | Silicon nitride coated, plastic covered solar cell |
| DE2709741A1 (de) * | 1977-03-05 | 1978-09-07 | Licentia Gmbh | Solarzellenanordnung fuer den terrestrischen bereich |
| FR2429495A1 (fr) * | 1978-06-20 | 1980-01-18 | Siemens Ag | Batterie de piles solaires et procede pour sa fabrication |
| DE3140139A1 (de) * | 1981-02-13 | 1982-09-09 | RCA Corp., 10020 New York, N.Y. | "verfahren zum herstellen einer amorphen siliziumsolarzelle" |
-
1983
- 1983-05-11 DE DE19833317269 patent/DE3317269A1/de active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3658596A (en) * | 1970-09-21 | 1972-04-25 | Lockheed Missiles Space | Flexible solar cell modular assembly |
| US3912540A (en) * | 1971-06-21 | 1975-10-14 | Nasa | Covered silicon solar cells and method of manufacture |
| US3996067A (en) * | 1975-12-30 | 1976-12-07 | The United States Of America As Represented By The National Aeronautics And Space Administration | Silicon nitride coated, plastic covered solar cell |
| DE2709741A1 (de) * | 1977-03-05 | 1978-09-07 | Licentia Gmbh | Solarzellenanordnung fuer den terrestrischen bereich |
| FR2429495A1 (fr) * | 1978-06-20 | 1980-01-18 | Siemens Ag | Batterie de piles solaires et procede pour sa fabrication |
| DE3140139A1 (de) * | 1981-02-13 | 1982-09-09 | RCA Corp., 10020 New York, N.Y. | "verfahren zum herstellen einer amorphen siliziumsolarzelle" |
Non-Patent Citations (3)
| Title |
|---|
| DE-B.: K. Biederbick, Kunststoffe kurz und bündig, 4. Aufl., Würzburg, 1977, S. 102-104 * |
| GB-Z.: Solar Energy, Bd. 22, 1979, S. 389-396 * |
| US-B.: SPIE Seminar Proceedings, Vol. 85, 1977: Society of Photo-Optical Instrumentation Engineers Meeting, 24.-25. Aug. 1976, S. 16-21 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4686322A (en) * | 1985-08-12 | 1987-08-11 | Rca Corporation | Solar panel |
| EP0246027A3 (en) * | 1986-05-14 | 1989-02-22 | Siemens Solar Industries L.P. | Flexible photovoltaic device |
| DE3639676A1 (de) * | 1986-06-19 | 1987-12-23 | Teijin Ltd | Solarzellenmodul |
| DE3626450A1 (de) * | 1986-08-05 | 1988-02-11 | Hans Joachim Dipl P Kirschning | Als solarzelle wirkendes bauteil von bauwerken und gebaeuden |
| EP0625802A3 (en) * | 1993-05-18 | 1997-05-28 | Canon Kk | Solar cell module and installation method thereof. |
| EP0641030A3 (en) * | 1993-08-31 | 1996-02-28 | Canon Kk | Photoelectric conversion device and photoelectric conversion module, each with a protective element made of fluorine-containing polymer resin. |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3317269C2 (OSRAM) | 1991-06-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: TOTAL ENERGIE DEVELOPPEMENT + MESSERSCHMITT-BOELKO |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |