DE3307572C2 - - Google Patents

Info

Publication number
DE3307572C2
DE3307572C2 DE3307572A DE3307572A DE3307572C2 DE 3307572 C2 DE3307572 C2 DE 3307572C2 DE 3307572 A DE3307572 A DE 3307572A DE 3307572 A DE3307572 A DE 3307572A DE 3307572 C2 DE3307572 C2 DE 3307572C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3307572A
Other versions
DE3307572A1 (de
Inventor
Shunroku Mito Jp Taya
Takeshi Ibaraki Jp Koike
Mitsuo Katsuta Jp Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3307572A1 publication Critical patent/DE3307572A1/de
Application granted granted Critical
Publication of DE3307572C2 publication Critical patent/DE3307572C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE19833307572 1982-03-05 1983-03-03 Probendrehvorrichtung Granted DE3307572A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57033918A JPS58153535A (ja) 1982-03-05 1982-03-05 試料回転装置

Publications (2)

Publication Number Publication Date
DE3307572A1 DE3307572A1 (de) 1983-09-15
DE3307572C2 true DE3307572C2 (de) 1987-02-19

Family

ID=12399893

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833307572 Granted DE3307572A1 (de) 1982-03-05 1983-03-03 Probendrehvorrichtung

Country Status (3)

Country Link
US (1) US4599516A (de)
JP (1) JPS58153535A (de)
DE (1) DE3307572A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19635325A1 (de) * 1995-05-23 1998-03-12 Advantest Corp Konstanttemperaturkammer in einem Handler für Halbleitervorrichtungs-Testgeräte

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733091A (en) * 1984-09-19 1988-03-22 Applied Materials, Inc. Systems and methods for ion implantation of semiconductor wafers
JP2507302B2 (ja) * 1984-09-19 1996-06-12 アプライド マテリアルズ インコーポレーテッド 半導体ウエハをイオンインプランテ−シヨンする装置及び方法
US4705951A (en) * 1986-04-17 1987-11-10 Varian Associates, Inc. Wafer processing system
JPS62272444A (ja) * 1986-05-20 1987-11-26 Fujitsu Ltd イオン注入用タ−ゲツト機構
DE3803411A1 (de) * 1988-02-05 1989-08-17 Leybold Ag Vorrichtung zur halterung von werkstuecken
US4899059A (en) * 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
CS272919B1 (en) * 1988-12-29 1991-02-12 Vladimir Ing Csc Dynda Vacuum chamber for ionic implantation
JP2595113B2 (ja) * 1989-12-21 1997-03-26 株式会社日立製作所 半導体製造装置
US5338940A (en) * 1991-07-22 1994-08-16 Nissin High Voltage Co., Ltd. Apparatus for ion implantation including contactless cooling and beam current measurement means
DE19904716A1 (de) * 1999-02-05 2000-08-31 Bilatec Ges Zur Entwicklung Bi Vorrichtung zum selektiven Temperieren einzelner Behältnisse
US20020088608A1 (en) * 1999-07-26 2002-07-11 Park Chan-Hoon Method and apparatus for heating a wafer, and method and apparatus for baking a photoresist film on a wafer
WO2001051209A1 (de) * 2000-01-15 2001-07-19 Eppendorf Ag Labortemperiergerät mit temperaturgeregeltem temperierblock
US7528392B2 (en) * 2006-11-27 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for low-temperature ion implantation
JP5607153B2 (ja) * 2009-06-30 2014-10-15 トゥイン・クリークス・テクノロジーズ・インコーポレイテッド イオン注入装置および方法
EP2515170B1 (de) * 2011-04-20 2020-02-19 ASML Netherlands BV Wärmekonditionierungssystem zur Wärmekonditionierung eines Teils einer lithografischen Vorrichtung und Wärmekonditionierungsverfahren
JP7224139B2 (ja) * 2018-10-25 2023-02-17 東京エレクトロン株式会社 ステージ装置および処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3151669A (en) * 1959-10-19 1964-10-06 United Aircraft Corp Cooling system for rotating members
US4116266A (en) * 1974-08-02 1978-09-26 Agency Of Industrial Science & Technology Apparatus for heat transfer
SU630513A1 (ru) * 1975-04-16 1978-10-30 Kovalev Evgenij B Центробежна теплова труба
NL7807174A (nl) * 1978-06-30 1980-01-03 Philips Nv Zonnecollector met een verdampingscondensatiesysteem.
US4274476A (en) * 1979-05-14 1981-06-23 Western Electric Company, Inc. Method and apparatus for removing heat from a workpiece during processing in a vacuum chamber
US4228358A (en) * 1979-05-23 1980-10-14 Nova Associates, Inc. Wafer loading apparatus for beam treatment
US4247781A (en) * 1979-06-29 1981-01-27 International Business Machines Corporation Cooled target disc for high current ion implantation method and apparatus
JPS5953659B2 (ja) * 1980-04-11 1984-12-26 株式会社日立製作所 真空室中回転体の往復動機構
US4453080A (en) * 1981-07-20 1984-06-05 Varian Associates, Inc. Temperature control of a workpiece under ion implantation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19635325A1 (de) * 1995-05-23 1998-03-12 Advantest Corp Konstanttemperaturkammer in einem Handler für Halbleitervorrichtungs-Testgeräte
DE19635325C2 (de) * 1995-05-23 1999-07-01 Advantest Corp Konstanttemperaturkammer in einem Handler für Halbleiterbauelemente-Testgeräte

Also Published As

Publication number Publication date
DE3307572A1 (de) 1983-09-15
JPS58153535A (ja) 1983-09-12
US4599516A (en) 1986-07-08

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee