DE3279526D1 - Semiconductor optical logic device - Google Patents

Semiconductor optical logic device

Info

Publication number
DE3279526D1
DE3279526D1 DE8282111464T DE3279526T DE3279526D1 DE 3279526 D1 DE3279526 D1 DE 3279526D1 DE 8282111464 T DE8282111464 T DE 8282111464T DE 3279526 T DE3279526 T DE 3279526T DE 3279526 D1 DE3279526 D1 DE 3279526D1
Authority
DE
Germany
Prior art keywords
logic device
semiconductor optical
optical logic
semiconductor
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282111464T
Other languages
English (en)
Inventor
Yukinori Kuwano
Shoichi Nakano
Masaru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56200469A external-priority patent/JPS58101475A/ja
Priority claimed from JP56204596A external-priority patent/JPS58105581A/ja
Priority claimed from JP56205953A external-priority patent/JPS58106878A/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Application granted granted Critical
Publication of DE3279526D1 publication Critical patent/DE3279526D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE8282111464T 1981-12-11 1982-12-10 Semiconductor optical logic device Expired DE3279526D1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56200469A JPS58101475A (ja) 1981-12-11 1981-12-11 半導体光結合装置
JP56204596A JPS58105581A (ja) 1981-12-17 1981-12-17 半導体光結合装置
JP56205953A JPS58106878A (ja) 1981-12-18 1981-12-18 半導体光結合装置

Publications (1)

Publication Number Publication Date
DE3279526D1 true DE3279526D1 (en) 1989-04-13

Family

ID=27327816

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282111464T Expired DE3279526D1 (en) 1981-12-11 1982-12-10 Semiconductor optical logic device

Country Status (3)

Country Link
US (1) US4626878A (de)
EP (1) EP0081827B1 (de)
DE (1) DE3279526D1 (de)

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JPH0685432B2 (ja) * 1985-03-18 1994-10-26 株式会社日立製作所 半導体装置
US4894700A (en) * 1985-04-09 1990-01-16 Fuji Xerox Co., Ltd. Image sensor
FR2585510A1 (fr) * 1985-07-23 1987-01-30 Cit Alcatel Dispositif de couplage de plusieurs voies electriques d'entree de signaux a une meme voie electrique de sortie avec isolement des masses
DE3713067A1 (de) * 1986-09-30 1988-03-31 Siemens Ag Optoelektronisches koppelelement und verfahren zu dessen herstellung
US4771169A (en) * 1987-03-18 1988-09-13 Boatmun Dewey L Optical digital processing device
JP2831730B2 (ja) * 1989-09-29 1998-12-02 株式会社東芝 密着型イメージセンサ
US5093879A (en) * 1990-06-22 1992-03-03 International Business Machines Corporation Electro-optical connectors
US5200631A (en) * 1991-08-06 1993-04-06 International Business Machines Corporation High speed optical interconnect
US5414789A (en) * 1992-07-30 1995-05-09 United States Of America Optical logic gates with high extinction ratio using inverse scattering technique and method using same
JPH06342146A (ja) * 1992-12-11 1994-12-13 Canon Inc 画像表示装置、半導体装置及び光学機器
US5296715A (en) * 1992-12-21 1994-03-22 The United States Of America As Represented By The Department Of Energy Optically isolated signal coupler with linear response
US5493986A (en) * 1993-05-13 1996-02-27 Augusto; Carlos J. R. P. Method of providing VLSI-quality crystalline semiconductor substrates
JP3638328B2 (ja) * 1994-12-30 2005-04-13 株式会社シチズン電子 表面実装型フォトカプラ及びその製造方法
AU5881196A (en) * 1995-05-31 1996-12-18 Cp Clare Corporation Voltage-to-current converter using optical isolation
JP3759233B2 (ja) * 1996-04-19 2006-03-22 ローム株式会社 光通信用デバイス
DE19616969A1 (de) * 1996-04-27 1997-10-30 Bosch Gmbh Robert Optische Baugruppe zur Ankopplung eines Lichtwellenleiters und Verfahren zur Herstellung derselben
US5708280A (en) * 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication
JPH10153720A (ja) * 1996-11-25 1998-06-09 Sony Corp 光送受信装置
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
EP1290733A1 (de) 2000-05-31 2003-03-12 Motorola, Inc. Halbleiterbauelement und dessen herstellungsverfahren
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US20020158245A1 (en) * 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
JP2002344011A (ja) * 2001-05-15 2002-11-29 Sony Corp 表示素子及びこれを用いた表示装置
US20020181828A1 (en) * 2001-06-01 2002-12-05 Motorola, Inc. Structure for an optically switched device utilizing the formation of a compliant substrate for materials used to form the same
US20030012965A1 (en) * 2001-07-10 2003-01-16 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layer
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US20040079285A1 (en) * 2002-10-24 2004-04-29 Motorola, Inc. Automation of oxide material growth in molecular beam epitaxy systems
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) * 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6963090B2 (en) * 2003-01-09 2005-11-08 Freescale Semiconductor, Inc. Enhancement mode metal-oxide-semiconductor field effect transistor
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
DE102006010145A1 (de) * 2006-01-27 2007-08-09 Erbe Elektromedizin Gmbh Optokopplervorrichtung und Verfahren zur Fertigung dessen
JP5820989B2 (ja) * 2011-03-25 2015-11-24 パナソニックＩｐマネジメント株式会社 光電変換素子の製造方法
DE102016001388B4 (de) 2016-02-09 2018-09-27 Azur Space Solar Power Gmbh Optokoppler
KR102430500B1 (ko) * 2017-05-30 2022-08-08 삼성전자주식회사 반도체 발광소자 및 이를 이용한 led 모듈

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US3229104A (en) * 1962-12-24 1966-01-11 Ibm Four terminal electro-optical semiconductor device using light coupling
GB1080732A (en) * 1963-04-25 1967-08-23 Nat Res Dev Electronic circuital element
US3358146A (en) * 1964-04-29 1967-12-12 Gen Electric Integrally constructed solid state light emissive-light responsive negative resistance device
US3445686A (en) * 1967-01-13 1969-05-20 Ibm Solid state transformer
FR2126462A5 (de) * 1969-07-09 1972-10-06 Radiotechnique Compelec
US3748480A (en) * 1970-11-02 1973-07-24 Motorola Inc Monolithic coupling device including light emitter and light sensor
US3818451A (en) * 1972-03-15 1974-06-18 Motorola Inc Light-emitting and light-receiving logic array
JPS5642148B2 (de) * 1975-01-24 1981-10-02
US4069492A (en) * 1976-08-23 1978-01-17 Rca Corporation Electroluminescent semiconductor device having a body of amorphous silicon
JPS5378794A (en) * 1976-12-23 1978-07-12 Toshiba Corp Photo semiconductor element
US4281208A (en) * 1979-02-09 1981-07-28 Sanyo Electric Co., Ltd. Photovoltaic device and method of manufacturing thereof
JPS5651880A (en) * 1979-10-04 1981-05-09 Fuji Electric Co Ltd Amorphous semiconductor photocell

Also Published As

Publication number Publication date
US4626878A (en) 1986-12-02
EP0081827A2 (de) 1983-06-22
EP0081827B1 (de) 1989-03-08
EP0081827A3 (en) 1985-06-26

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Legal Events

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