GB1080732A - Electronic circuital element - Google Patents

Electronic circuital element

Info

Publication number
GB1080732A
GB1080732A GB1632563A GB1632563A GB1080732A GB 1080732 A GB1080732 A GB 1080732A GB 1632563 A GB1632563 A GB 1632563A GB 1632563 A GB1632563 A GB 1632563A GB 1080732 A GB1080732 A GB 1080732A
Authority
GB
United Kingdom
Prior art keywords
radiation
layer
diode
input
phosphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1632563A
Inventor
Michael John Coupland
Ronald Francis Johnston Broom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB1632563A priority Critical patent/GB1080732A/en
Priority to DE19641489157 priority patent/DE1489157A1/en
Priority to NL6404425A priority patent/NL6404425A/xx
Priority to FR972093A priority patent/FR1392215A/en
Publication of GB1080732A publication Critical patent/GB1080732A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
    • H01L31/162—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. a light emitting diode

Abstract

A semi-conductor device consists of a body 1 of A3B5 material with a resistivity greater than 105 ohm-cm. to opposite faces of which are attached a radiation emitting PN junction diode 2, also of A3B5 material, and a radiation sensitive layer 7 which may but need not contain a PN junction. The body 1 is transparent <PICT:1080732/C4-C5/1> to the radiation emitted by the diode 2 and the device operates as a switch or relay, radiation emission being initiated by energizing input terminals 4 and 5 and detected as a resistance change or voltage between the output terminals 8 and 9. Preferred materials are: for the body portion 1, gallium arsenide or phosphide or arseno-phosphide; for the emitting diode 2, gallium arsenide either alone or in combination with indium arsenide or gallium phosphide; and for the layer 7, germanium or germanium-silicon or gallium arsenide. In use, radiation (e.g. 9000 <\>rA infra-red radiation) emitted from the diode 2 either effectively short circuits the output terminals when, as in the case illustrated, the output layer 7 is photo-resistive or provides an output e.m.f. if the latter layer contains a PN junction. There may be a plurality of separate PN junctions in the input layer 2, providing a plurality of pairs of input electrodes. Such an arrangement can function as an "OR" gate, and the input can have one common electrode (Fig. 3, not shown), or be totally isolated from each other (as in Fig. 4, not shown). A transistor may be associated in the device either as a simple amplifier or to convert an " OR " gate embodiment into a " NOR " gate. Such transistors may be formed in the same semi-conductor body as the device itself. Reference has been directed by the Comptroller to Specification 967,439.
GB1632563A 1963-04-25 1963-04-25 Electronic circuital element Expired GB1080732A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB1632563A GB1080732A (en) 1963-04-25 1963-04-25 Electronic circuital element
DE19641489157 DE1489157A1 (en) 1963-04-25 1964-04-22 Electrical circuit element
NL6404425A NL6404425A (en) 1963-04-25 1964-04-22
FR972093A FR1392215A (en) 1963-04-25 1964-04-23 electronic circuit element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1632563A GB1080732A (en) 1963-04-25 1963-04-25 Electronic circuital element

Publications (1)

Publication Number Publication Date
GB1080732A true GB1080732A (en) 1967-08-23

Family

ID=10075266

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1632563A Expired GB1080732A (en) 1963-04-25 1963-04-25 Electronic circuital element

Country Status (3)

Country Link
DE (1) DE1489157A1 (en)
GB (1) GB1080732A (en)
NL (1) NL6404425A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0081827A2 (en) * 1981-12-11 1983-06-22 Sanyo Electric Co., Ltd. Semiconductor optical logic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0081827A2 (en) * 1981-12-11 1983-06-22 Sanyo Electric Co., Ltd. Semiconductor optical logic device
EP0081827A3 (en) * 1981-12-11 1985-06-26 Sanyo Electric Co., Ltd. Semiconductor optical logical device

Also Published As

Publication number Publication date
DE1489157A1 (en) 1969-05-14
NL6404425A (en) 1964-10-26

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