DE3278873D1 - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
DE3278873D1
DE3278873D1 DE8282107961T DE3278873T DE3278873D1 DE 3278873 D1 DE3278873 D1 DE 3278873D1 DE 8282107961 T DE8282107961 T DE 8282107961T DE 3278873 T DE3278873 T DE 3278873T DE 3278873 D1 DE3278873 D1 DE 3278873D1
Authority
DE
Germany
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282107961T
Other languages
English (en)
Inventor
Kenji Shibata
Tomoyasu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3278873D1 publication Critical patent/DE3278873D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE8282107961T 1981-08-31 1982-08-30 Semiconductor integrated circuit device Expired DE3278873D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56135420A JPS5837949A (ja) 1981-08-31 1981-08-31 集積回路装置

Publications (1)

Publication Number Publication Date
DE3278873D1 true DE3278873D1 (en) 1988-09-08

Family

ID=15151312

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282107961T Expired DE3278873D1 (en) 1981-08-31 1982-08-30 Semiconductor integrated circuit device

Country Status (4)

Country Link
US (1) US4472729A (de)
EP (1) EP0073509B1 (de)
JP (1) JPS5837949A (de)
DE (1) DE3278873D1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577161A (en) * 1980-06-16 1982-01-14 Toshiba Corp Mos semiconductor device
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
JPS6042855A (ja) * 1983-08-19 1985-03-07 Hitachi Ltd 半導体装置
US4754314A (en) * 1984-01-24 1988-06-28 Texas Instruments Incorporated Split-level CMOS
US4879585A (en) * 1984-03-31 1989-11-07 Kabushiki Kaisha Toshiba Semiconductor device
US4605946A (en) * 1984-08-16 1986-08-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fet charge sensor and voltage probe
JP2505754B2 (ja) * 1986-07-11 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
US5045501A (en) * 1986-08-25 1991-09-03 Hughes Aircraft Company Method of forming an integrated circuit structure with multiple common planes
US4777147A (en) * 1987-01-28 1988-10-11 Texas Instruments Incorporated Forming a split-level CMOS device
DE3717873A1 (de) * 1987-05-27 1988-12-08 Fraunhofer Ges Forschung Verfahren zum herstellen von dreidimensionalen mehrschichtigen integrierten schaltungen mittels eines keimziehverfahrens
US5128732A (en) * 1987-05-30 1992-07-07 Kozo Iizuka, Director General, Agency Of Industrial Science & Technology Stacked semiconductor device
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
JPH03196567A (ja) * 1989-08-30 1991-08-28 Ricoh Co Ltd 半導体基板とその製造方法
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5930608A (en) * 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
US5670828A (en) * 1995-02-21 1997-09-23 Advanced Micro Devices, Inc. Tunneling technology for reducing intra-conductive layer capacitance
US6849557B1 (en) 1997-04-30 2005-02-01 Micron Technology, Inc. Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide
US6277758B1 (en) 1998-07-23 2001-08-21 Micron Technology, Inc. Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher
US6989108B2 (en) * 2001-08-30 2006-01-24 Micron Technology, Inc. Etchant gas composition
US6661691B2 (en) * 2002-04-02 2003-12-09 Hewlett-Packard Development Company, L.P. Interconnection structure and methods
US6704218B2 (en) * 2002-04-02 2004-03-09 Agilent Technologies, Inc. FeRAM with a single access/multiple-comparison operation
US20080237718A1 (en) * 2007-03-30 2008-10-02 Vladimir Noveski Methods of forming highly oriented diamond films and structures formed thereby
JP2009076879A (ja) 2007-08-24 2009-04-09 Semiconductor Energy Lab Co Ltd 半導体装置
US8232598B2 (en) * 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8044464B2 (en) * 2007-09-21 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7982250B2 (en) * 2007-09-21 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
FR2979481B1 (fr) 2011-08-25 2016-07-01 Commissariat Energie Atomique Procede de realisation d'un circuit integre tridimensionnel
FR3031835B1 (fr) 2015-01-16 2017-12-22 Commissariat Energie Atomique Procede de realisation d'un circuit electronique integre tridimensionnel
US11545565B2 (en) * 2020-10-21 2023-01-03 IceMos Technology Limited Semiconductor device and method of forming low voltage power MOSFETs using graphene for metal layers and graphene nanoribbons for channel and drain enhancement regions of power vertical and lateral MOSFETs

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589705A1 (de) * 1967-11-15 1970-04-30 Itt Ind Gmbh Deutsche Mehrere elektrische Funktionsstufen enthaltende integrierte Schaltung
CA930477A (en) * 1971-12-22 1973-07-17 Microsystems International Limited Multi-level integrated circuit and fabrication thereof
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
US4291737A (en) * 1979-03-05 1981-09-29 Russell, Burdsall And Ward Corporation Prevailing torque lock nut and method of forming same
EP0020135A1 (de) * 1979-05-29 1980-12-10 Massachusetts Institute Of Technology Dreidimensionale Integration durch graphische Epitaxie
JPS55164059A (en) * 1979-06-08 1980-12-20 Hitachi Metals Ltd High grade tool steel for hot working
JPS5673697A (en) * 1979-11-21 1981-06-18 Hitachi Ltd Manufacture of single crystal thin film
US4314858A (en) * 1979-11-23 1982-02-09 Rockwell International Corporation Method of making a fully integrated monolithic optical receiver
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
JPS55147010A (en) * 1980-04-21 1980-11-15 Sony Corp Preamplifier for electrostatic type electro-acoustic converter

Also Published As

Publication number Publication date
EP0073509A3 (en) 1985-04-03
EP0073509A2 (de) 1983-03-09
US4472729A (en) 1984-09-18
JPS5837949A (ja) 1983-03-05
EP0073509B1 (de) 1988-08-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee