DE3271346D1 - Method of making integrated bipolar transistors of very small dimensions - Google Patents
Method of making integrated bipolar transistors of very small dimensionsInfo
- Publication number
- DE3271346D1 DE3271346D1 DE8282401158T DE3271346T DE3271346D1 DE 3271346 D1 DE3271346 D1 DE 3271346D1 DE 8282401158 T DE8282401158 T DE 8282401158T DE 3271346 T DE3271346 T DE 3271346T DE 3271346 D1 DE3271346 D1 DE 3271346D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistors
- small dimensions
- making integrated
- integrated bipolar
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8112604A FR2508704B1 (fr) | 1981-06-26 | 1981-06-26 | Procede de fabrication de transistors bipolaires integres de tres petites dimensions |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3271346D1 true DE3271346D1 (en) | 1986-07-03 |
Family
ID=9259907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282401158T Expired DE3271346D1 (en) | 1981-06-26 | 1982-06-24 | Method of making integrated bipolar transistors of very small dimensions |
Country Status (4)
Country | Link |
---|---|
US (1) | US4481706A (de) |
EP (1) | EP0071494B1 (de) |
DE (1) | DE3271346D1 (de) |
FR (1) | FR2508704B1 (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5866359A (ja) * | 1981-09-28 | 1983-04-20 | Fujitsu Ltd | 半導体装置の製造方法 |
US4712125A (en) * | 1982-08-06 | 1987-12-08 | International Business Machines Corporation | Structure for contacting a narrow width PN junction region |
US4551905A (en) * | 1982-12-09 | 1985-11-12 | Cornell Research Foundation, Inc. | Fabrication of metal lines for semiconductor devices |
US4673960A (en) * | 1982-12-09 | 1987-06-16 | Cornell Research Foundation, Inc. | Fabrication of metal lines for semiconductor devices |
JPS59217364A (ja) * | 1983-05-26 | 1984-12-07 | Sony Corp | 半導体装置の製法 |
FR2549293B1 (fr) * | 1983-07-13 | 1986-10-10 | Silicium Semiconducteur Ssc | Transistor bipolaire haute frequence et son procede de fabrication |
JPS6024059A (ja) * | 1983-07-19 | 1985-02-06 | Sony Corp | 半導体装置の製造方法 |
US4546536A (en) * | 1983-08-04 | 1985-10-15 | International Business Machines Corporation | Fabrication methods for high performance lateral bipolar transistors |
US4573256A (en) * | 1983-08-26 | 1986-03-04 | International Business Machines Corporation | Method for making a high performance transistor integrated circuit |
DE3330895A1 (de) * | 1983-08-26 | 1985-03-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von bipolartransistorstrukturen mit selbstjustierten emitter- und basisbereichen fuer hoechstfrequenzschaltungen |
JPS60175453A (ja) * | 1984-02-20 | 1985-09-09 | Matsushita Electronics Corp | トランジスタの製造方法 |
JPS60217657A (ja) * | 1984-04-12 | 1985-10-31 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法 |
US4713355A (en) * | 1984-04-16 | 1987-12-15 | Trw Inc. | Bipolar transistor construction |
US4640721A (en) * | 1984-06-06 | 1987-02-03 | Hitachi, Ltd. | Method of forming bipolar transistors with graft base regions |
NL8402856A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
JPH0611053B2 (ja) * | 1984-12-20 | 1994-02-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
DE3688711T2 (de) * | 1985-03-07 | 1993-12-16 | Toshiba Kawasaki Kk | Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung. |
GB2175136B (en) * | 1985-04-10 | 1988-10-05 | Mitsubishi Electric Corp | Semiconductor manufacturing method |
US4778775A (en) * | 1985-08-26 | 1988-10-18 | Intel Corporation | Buried interconnect for silicon on insulator structure |
JPS6252963A (ja) * | 1985-09-02 | 1987-03-07 | Fujitsu Ltd | バイポ−ラトランジスタの製造方法 |
JPH0622238B2 (ja) * | 1985-10-02 | 1994-03-23 | 沖電気工業株式会社 | バイポ−ラ型半導体集積回路装置の製造方法 |
US4696097A (en) * | 1985-10-08 | 1987-09-29 | Motorola, Inc. | Poly-sidewall contact semiconductor device method |
US4669179A (en) * | 1985-11-01 | 1987-06-02 | Advanced Micro Devices, Inc. | Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions |
US4755476A (en) * | 1985-12-17 | 1988-07-05 | Siemens Aktiengesellschaft | Process for the production of self-adjusted bipolar transistor structures having a reduced extrinsic base resistance |
EP0231740A3 (de) * | 1986-01-30 | 1989-07-12 | Texas Instruments Incorporated | Selbstjustierendes bipolares Bauelement aus Polysilizium und Verfahren zu seiner Herstellung |
US5104816A (en) * | 1986-01-30 | 1992-04-14 | Texas Instruments Incorporated | Polysilicon self-aligned bipolar device including trench isolation and process of manufacturing same |
US4675073A (en) * | 1986-03-07 | 1987-06-23 | Texas Instruments Incorporated | Tin etch process |
DE3787110D1 (de) * | 1986-03-21 | 1993-09-30 | Siemens Ag | Verfahren zur Herstellung einer Bipolartransistorstruktur für Höchstgeschwindigkeitsschaltung. |
US5084413A (en) * | 1986-04-15 | 1992-01-28 | Matsushita Electric Industrial Co., Ltd. | Method for filling contact hole |
US4947225A (en) * | 1986-04-28 | 1990-08-07 | Rockwell International Corporation | Sub-micron devices with method for forming sub-micron contacts |
US4860085A (en) * | 1986-06-06 | 1989-08-22 | American Telephone And Telegraph Company, At&T Bell Laboratories | Submicron bipolar transistor with buried silicide region |
JPS62290173A (ja) * | 1986-06-09 | 1987-12-17 | Oki Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
JP2741854B2 (ja) * | 1986-06-18 | 1998-04-22 | 株式会社日立製作所 | 半導体集積回路装置 |
US4782030A (en) * | 1986-07-09 | 1988-11-01 | Kabushiki Kaisha Toshiba | Method of manufacturing bipolar semiconductor device |
JPH0628266B2 (ja) * | 1986-07-09 | 1994-04-13 | 株式会社日立製作所 | 半導体装置の製造方法 |
DE3784974T2 (de) * | 1986-07-16 | 1993-08-26 | Texas Instruments Inc | Selbstjustierter vlsi bipolarer transistor. |
US4979010A (en) * | 1986-07-16 | 1990-12-18 | Texas Instruments Incorporated | VLSI self-aligned bipolar transistor |
US4812417A (en) * | 1986-07-30 | 1989-03-14 | Mitsubishi Denki Kabushiki Kaisha | Method of making self aligned external and active base regions in I.C. processing |
GB2194676B (en) * | 1986-07-30 | 1991-03-20 | Mitsubishi Electric Corp | A semiconductor integrated circuit device and a method of producing same |
JPS6362272A (ja) * | 1986-09-02 | 1988-03-18 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
JPS63107167A (ja) * | 1986-10-24 | 1988-05-12 | Oki Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
US5065208A (en) * | 1987-01-30 | 1991-11-12 | Texas Instruments Incorporated | Integrated bipolar and CMOS transistor with titanium nitride interconnections |
US5005066A (en) * | 1987-06-02 | 1991-04-02 | Texas Instruments Incorporated | Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology |
US4784966A (en) * | 1987-06-02 | 1988-11-15 | Texas Instruments Incorporated | Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology |
DE3877121D1 (de) * | 1987-10-23 | 1993-02-11 | Siemens Ag | Verfahren zur herstellung eines planaren selbstjustierten heterobipolartransistors. |
US5064773A (en) * | 1988-12-27 | 1991-11-12 | Raytheon Company | Method of forming bipolar transistor having closely spaced device regions |
US5010039A (en) * | 1989-05-15 | 1991-04-23 | Ku San Mei | Method of forming contacts to a semiconductor device |
GB2236901A (en) * | 1989-09-20 | 1991-04-17 | Philips Nv | A method of manufacturing a semiconductor device |
JP3798808B2 (ja) * | 1991-09-27 | 2006-07-19 | ハリス・コーポレーション | 高いアーリー電壓,高周波性能及び高降伏電壓特性を具備した相補型バイポーラトランジスター及びその製造方法 |
US5258317A (en) * | 1992-02-13 | 1993-11-02 | Integrated Device Technology, Inc. | Method for using a field implant mask to correct low doping levels at the outside edges of the base in a walled-emitter transistor structure |
US5648281A (en) * | 1992-09-21 | 1997-07-15 | Siliconix Incorporated | Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate |
US5422508A (en) * | 1992-09-21 | 1995-06-06 | Siliconix Incorporated | BiCDMOS structure |
US5559044A (en) * | 1992-09-21 | 1996-09-24 | Siliconix Incorporated | BiCDMOS process technology |
US5716859A (en) * | 1995-12-22 | 1998-02-10 | The Whitaker Corporation | Method of fabricating a silicon BJT |
WO1997023910A1 (en) * | 1995-12-22 | 1997-07-03 | The Whitaker Corporation | Silicon bipolar junction transistor having reduced emitter line width |
US9722041B2 (en) | 2012-09-19 | 2017-08-01 | Vishay-Siliconix | Breakdown voltage blocking device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
US4209349A (en) * | 1978-11-03 | 1980-06-24 | International Business Machines Corporation | Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching |
US4319932A (en) * | 1980-03-24 | 1982-03-16 | International Business Machines Corporation | Method of making high performance bipolar transistor with polysilicon base contacts |
-
1981
- 1981-06-26 FR FR8112604A patent/FR2508704B1/fr not_active Expired
-
1982
- 1982-06-24 DE DE8282401158T patent/DE3271346D1/de not_active Expired
- 1982-06-24 EP EP82401158A patent/EP0071494B1/de not_active Expired
- 1982-06-25 US US06/392,366 patent/US4481706A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4481706A (en) | 1984-11-13 |
FR2508704B1 (fr) | 1985-06-07 |
EP0071494B1 (de) | 1986-05-28 |
EP0071494A1 (de) | 1983-02-09 |
FR2508704A1 (fr) | 1982-12-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |