DE3270937D1 - Protection element for a semiconductor device - Google Patents

Protection element for a semiconductor device

Info

Publication number
DE3270937D1
DE3270937D1 DE8282300764T DE3270937T DE3270937D1 DE 3270937 D1 DE3270937 D1 DE 3270937D1 DE 8282300764 T DE8282300764 T DE 8282300764T DE 3270937 T DE3270937 T DE 3270937T DE 3270937 D1 DE3270937 D1 DE 3270937D1
Authority
DE
Germany
Prior art keywords
semiconductor device
protection element
protection
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282300764T
Other languages
English (en)
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56022008A external-priority patent/JPS57136369A/ja
Priority claimed from JP56136663A external-priority patent/JPS5837969A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3270937D1 publication Critical patent/DE3270937D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8282300764T 1981-02-17 1982-02-16 Protection element for a semiconductor device Expired DE3270937D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56022008A JPS57136369A (en) 1981-02-17 1981-02-17 Protective circuit element
JP56136663A JPS5837969A (ja) 1981-08-31 1981-08-31 保護回路素子

Publications (1)

Publication Number Publication Date
DE3270937D1 true DE3270937D1 (en) 1986-06-12

Family

ID=26359166

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282300764T Expired DE3270937D1 (en) 1981-02-17 1982-02-16 Protection element for a semiconductor device

Country Status (3)

Country Link
US (1) US4602267A (de)
EP (1) EP0058557B1 (de)
DE (1) DE3270937D1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786956A (en) * 1982-10-20 1988-11-22 North American Philips Corporation, Signetics Division Input protection device for integrated circuits
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US4725915A (en) * 1984-03-31 1988-02-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
JPS60207383A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 半導体装置
JP2635961B2 (ja) * 1986-09-26 1997-07-30 株式会社日立製作所 半導体装置の製造方法
US4987465A (en) * 1987-01-29 1991-01-22 Advanced Micro Devices, Inc. Electro-static discharge protection device for CMOS integrated circuit inputs
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture
US5141898A (en) * 1988-02-02 1992-08-25 Analog Devices, Incorporated Integrated circuit with means for reducing ESD damage
US5258644A (en) * 1988-02-24 1993-11-02 Hitachi, Ltd. Semiconductor device and method of manufacture thereof
JP2624878B2 (ja) * 1990-07-06 1997-06-25 株式会社東芝 半導体装置
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
JP3199808B2 (ja) * 1991-05-14 2001-08-20 セイコーインスツルメンツ株式会社 半導体集積回路装置
JP2953192B2 (ja) * 1991-05-29 1999-09-27 日本電気株式会社 半導体集積回路
JPH04365373A (ja) * 1991-06-13 1992-12-17 Nec Corp 半導体集積回路装置
KR930005184A (ko) * 1991-08-21 1993-03-23 김광호 정전기 전압 방지용 반도체 장치
US5416351A (en) * 1991-10-30 1995-05-16 Harris Corporation Electrostatic discharge protection
US5371395A (en) * 1992-05-06 1994-12-06 Xerox Corporation High voltage input pad protection circuitry
EP0688054A3 (de) * 1994-06-13 1996-06-05 Symbios Logic Inc Schutzstruktur für eine integrierte Schaltungshalbleiteranordnung gegen elektrostatische Entladungen
US5493133A (en) * 1994-06-30 1996-02-20 Texas Instruments Incorporated PNP punchthrough-assisted protection device for special applications in CMOS technologies
US5733794A (en) * 1995-02-06 1998-03-31 Motorola, Inc. Process for forming a semiconductor device with ESD protection
US5604369A (en) * 1995-03-01 1997-02-18 Texas Instruments Incorporated ESD protection device for high voltage CMOS applications
JPH08316426A (ja) * 1995-05-16 1996-11-29 Nittetsu Semiconductor Kk Ｍｏｓ型半導体装置およびその製造方法
JP2638571B2 (ja) * 1995-06-22 1997-08-06 日本電気株式会社 半導体装置の入力保護装置
USRE38608E1 (en) 1995-06-30 2004-10-05 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
US5880511A (en) * 1995-06-30 1999-03-09 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
JP3528554B2 (ja) 1997-12-04 2004-05-17 セイコーエプソン株式会社 半導体装置
US6100125A (en) * 1998-09-25 2000-08-08 Fairchild Semiconductor Corp. LDD structure for ESD protection and method of fabrication
US5960290A (en) * 1998-10-29 1999-09-28 United Microelectronics Corp. Method for fabricating a protection circuit of electrostatic discharge on a field device
US6114194A (en) * 1998-11-17 2000-09-05 United Microelectronics Corp. Method for fabricating a field device transistor
US7723823B2 (en) * 2008-07-24 2010-05-25 Freescale Semiconductor, Inc. Buried asymmetric junction ESD protection device
US9385241B2 (en) 2009-07-08 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the ESD protection circuits

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3577043A (en) * 1967-12-07 1971-05-04 United Aircraft Corp Mosfet with improved voltage breakdown characteristics
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
US3667009A (en) * 1970-12-28 1972-05-30 Motorola Inc Complementary metal oxide semiconductor gate protection diode
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
US4225877A (en) * 1978-09-05 1980-09-30 Sprague Electric Company Integrated circuit with C-Mos logic, and a bipolar driver with polysilicon resistors
JPS5683964A (en) * 1979-12-13 1981-07-08 Nec Corp Input protective device

Also Published As

Publication number Publication date
US4602267A (en) 1986-07-22
EP0058557B1 (de) 1986-05-07
EP0058557A1 (de) 1982-08-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee