DE3242921A1 - Verfahren zum aufbringen einer schicht eines naszierenden oxids und nach dem verfahren hergestelltes halbleiterelement - Google Patents

Verfahren zum aufbringen einer schicht eines naszierenden oxids und nach dem verfahren hergestelltes halbleiterelement

Info

Publication number
DE3242921A1
DE3242921A1 DE19823242921 DE3242921A DE3242921A1 DE 3242921 A1 DE3242921 A1 DE 3242921A1 DE 19823242921 DE19823242921 DE 19823242921 DE 3242921 A DE3242921 A DE 3242921A DE 3242921 A1 DE3242921 A1 DE 3242921A1
Authority
DE
Germany
Prior art keywords
oxygen
substrate
nascent
oxide
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19823242921
Other languages
German (de)
English (en)
Inventor
John W. Malibu Calif. Peters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DE3242921A1 publication Critical patent/DE3242921A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/471—Inorganic layers
    • H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
DE19823242921 1981-11-23 1982-11-20 Verfahren zum aufbringen einer schicht eines naszierenden oxids und nach dem verfahren hergestelltes halbleiterelement Withdrawn DE3242921A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32378081A 1981-11-23 1981-11-23

Publications (1)

Publication Number Publication Date
DE3242921A1 true DE3242921A1 (de) 1983-08-04

Family

ID=23260697

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823242921 Withdrawn DE3242921A1 (de) 1981-11-23 1982-11-20 Verfahren zum aufbringen einer schicht eines naszierenden oxids und nach dem verfahren hergestelltes halbleiterelement

Country Status (5)

Country Link
JP (1) JPS58155725A (enrdf_load_stackoverflow)
DE (1) DE3242921A1 (enrdf_load_stackoverflow)
FR (1) FR2517121A1 (enrdf_load_stackoverflow)
GB (1) GB2111037B (enrdf_load_stackoverflow)
NL (1) NL8204475A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111333A (ja) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ＳｉＯ領域をＳｉＯ↓２領域に変換してＳｉＯ↓２領を形成する方法
DE3680623D1 (de) * 1985-02-28 1991-09-05 Sony Corp Verfahren zur herstellung isolierender oxid-schichten auf einem halbleiterkoerper.
DE3545242A1 (de) * 1985-12-20 1987-06-25 Licentia Gmbh Strukturierter halbleiterkoerper
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
JPH01319944A (ja) * 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
FR2635915B1 (fr) * 1988-08-30 1992-04-30 Loualiche Slimane Procede de fabrication d'une couche mince d'oxyde par voie seche sur un materiau iii-v, couche d'oxyde obtenue par ce procede et application a une diode schottky
CN100473454C (zh) * 2004-05-21 2009-04-01 三菱瓦斯化学株式会社 进行物质氧化的方法和该方法采用的氧化设备
JP6501486B2 (ja) * 2014-10-27 2019-04-17 学校法人東海大学 滅菌装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718503A (en) * 1971-07-14 1973-02-27 Us Army Method of forming a diffusion mask barrier on a silicon substrate
DE2155849C3 (de) * 1971-11-10 1979-07-26 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen
EP0030798B1 (en) * 1979-12-17 1983-12-28 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition

Also Published As

Publication number Publication date
GB2111037A (en) 1983-06-29
JPH0436456B2 (enrdf_load_stackoverflow) 1992-06-16
GB2111037B (en) 1984-10-17
NL8204475A (nl) 1983-06-16
FR2517121A1 (fr) 1983-05-27
JPS58155725A (ja) 1983-09-16

Similar Documents

Publication Publication Date Title
DE3541587C2 (de) Verfahren zur Herstellung eines dünnen Halbleiterfilms
DE69411078T2 (de) Isotopenbatterien
DE69628704T2 (de) Verfahren zum Herstellen eines Oxidfilms auf der Oberfläche eines Halbleitersubstrats
DE69621467T2 (de) Vorbereitung von cu x in y ga z se n (x=0-2, y = 0-2, z = 0-2, n = 0-3) vorläuferfilmen durch elektroplattierung zur herstellung von solarzellen von hohem wirkungsgrad
DE3209066C2 (enrdf_load_stackoverflow)
DE69838532T2 (de) Plasmanitridierung eines Siliziumoxidfilms
DE2425382C2 (de) Verfahren zur Herstellung von Isolierschicht-Feldeffekttransistoren
DE19627017A1 (de) Verfahren zur selektiven Ablagerung eines Metallfilms
DE19912961A1 (de) Halbleiterdünnfilm, Herstellungsverfahren dafür, sowie den Halbleiterdünnfilm aufweisende Solarzelle
DE2845460A1 (de) Verfahren zur herstellung einer halbleitervorrichtung
DE4126955C2 (de) Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen
DE2755500A1 (de) Solarzelle und verfahren zu ihrer herstellung
DE4004559A1 (de) Photovoltaisches halbleiterelement
DE3700620A1 (de) Halbleiterkoerper und verfahren zum herstellen desselben
DE3925070C2 (de) Verfahren zum Erhalt einer sauberen Siliziumoberfläche
DE2539943A1 (de) Verfahren zum stabilisieren von mos-bauelementen
DE69431535T2 (de) Verfahren zur Herstellung von einer Chalcopyrit-Halbleiterdünnschichtstruktur mit einem spezifischen Dotiermaterial
WO2018050171A1 (de) Verfahren zur passivierung einer oberfläche eines halbleitermaterials sowie halbleitersubstrat
DE102007014608B4 (de) Verfahren zur Herstellung eines porösen halbleitenden Films
EP2647037B1 (de) Verfahren zur wasserstoffpassivierung von halbleiterschichten
DE3242921A1 (de) Verfahren zum aufbringen einer schicht eines naszierenden oxids und nach dem verfahren hergestelltes halbleiterelement
DE2908146A1 (de) Amorpher halbleiter und verfahren zu seiner herstellung
DE2023936B2 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE3244661A1 (de) Verfahren zur herstellung einer festphasenlegierung
EP0211318B1 (de) Verfahren zum selektiven Auffüllen von in Isolationsschichten geätzten Kontaktlöchern mit metallisch leitenden Materialien bei der Herstellung von höchstintegrierten Halbleiterschaltungen sowie eine Vorrichtung zur Durchführung des Verfahrens

Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: KUHNEN, R., DIPL.-ING., 8050 FREISING LUDERSCHMIDT

8128 New person/name/address of the agent

Representative=s name: KUHNEN, R., DIPL.-ING. WACKER, P., DIPL.-ING. DIPL

8127 New person/name/address of the applicant

Owner name: HUGHES AIRCRAFT CO., LOS ANGELES, CALIF., US

8139 Disposal/non-payment of the annual fee