DE3229205A1 - Halbleiterbauelement und ein verfahren zu dessen herstellung - Google Patents

Halbleiterbauelement und ein verfahren zu dessen herstellung

Info

Publication number
DE3229205A1
DE3229205A1 DE19823229205 DE3229205A DE3229205A1 DE 3229205 A1 DE3229205 A1 DE 3229205A1 DE 19823229205 DE19823229205 DE 19823229205 DE 3229205 A DE3229205 A DE 3229205A DE 3229205 A1 DE3229205 A1 DE 3229205A1
Authority
DE
Germany
Prior art keywords
ion
semiconductor component
substrate
layer
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823229205
Other languages
German (de)
English (en)
Other versions
DE3229205C2 (enExample
Inventor
Max Dr.Rer.Nat. Kuisl
Jutta 7900 Ulm Richter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mercedes Benz Group AG
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19823229205 priority Critical patent/DE3229205A1/de
Publication of DE3229205A1 publication Critical patent/DE3229205A1/de
Application granted granted Critical
Publication of DE3229205C2 publication Critical patent/DE3229205C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
DE19823229205 1982-08-05 1982-08-05 Halbleiterbauelement und ein verfahren zu dessen herstellung Granted DE3229205A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19823229205 DE3229205A1 (de) 1982-08-05 1982-08-05 Halbleiterbauelement und ein verfahren zu dessen herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823229205 DE3229205A1 (de) 1982-08-05 1982-08-05 Halbleiterbauelement und ein verfahren zu dessen herstellung

Publications (2)

Publication Number Publication Date
DE3229205A1 true DE3229205A1 (de) 1984-02-09
DE3229205C2 DE3229205C2 (enExample) 1993-01-21

Family

ID=6170173

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823229205 Granted DE3229205A1 (de) 1982-08-05 1982-08-05 Halbleiterbauelement und ein verfahren zu dessen herstellung

Country Status (1)

Country Link
DE (1) DE3229205A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0496672A1 (fr) * 1991-01-24 1992-07-29 Commissariat à l'Energie Atomique Capteur pour la détection d'espèces chimiques ou de photons utilisant un transistor à effet de champ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2303574A1 (de) * 1972-02-09 1973-08-23 Ncr Co Verfahren zum herstellen von feldeffekttransistoren mit isolierter gateelektrode
US3806778A (en) * 1971-12-24 1974-04-23 Nippon Electric Co Insulated-gate field effect semiconductor device having low and stable gate threshold voltage

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806778A (en) * 1971-12-24 1974-04-23 Nippon Electric Co Insulated-gate field effect semiconductor device having low and stable gate threshold voltage
DE2303574A1 (de) * 1972-02-09 1973-08-23 Ncr Co Verfahren zum herstellen von feldeffekttransistoren mit isolierter gateelektrode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M. ESASHI and T. MATUSO: Integrated Micro Multi Ion Sensor Using Field Effect of Semiconductor. In: IEEE Transactions on Biomedical Engineering, Vol. BME-25, No. 2, March 1978, S. 184-191 *
T. Matsuo and M. Esashi, Methods of ISFET Fabrication, In: Sensors and Actuators, Vol. 1, 1981, S. 77-96 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0496672A1 (fr) * 1991-01-24 1992-07-29 Commissariat à l'Energie Atomique Capteur pour la détection d'espèces chimiques ou de photons utilisant un transistor à effet de champ
FR2672158A1 (fr) * 1991-01-24 1992-07-31 Commissariat Energie Atomique Capteur pour la detection d'especes chimiques ou de photons utilisant un transistor a effet de champ.

Also Published As

Publication number Publication date
DE3229205C2 (enExample) 1993-01-21

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: DAIMLER-BENZ AKTIENGESELLSCHAFT, 7000 STUTTGART, D

D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: DAIMLERCHRYSLER AG, 70567 STUTTGART, DE

8339 Ceased/non-payment of the annual fee