DE3223860C2 - - Google Patents
Info
- Publication number
- DE3223860C2 DE3223860C2 DE3223860A DE3223860A DE3223860C2 DE 3223860 C2 DE3223860 C2 DE 3223860C2 DE 3223860 A DE3223860 A DE 3223860A DE 3223860 A DE3223860 A DE 3223860A DE 3223860 C2 DE3223860 C2 DE 3223860C2
- Authority
- DE
- Germany
- Prior art keywords
- potential
- readout
- charge
- image sensor
- ccd image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012546 transfer Methods 0.000 claims description 21
- 238000003860 storage Methods 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000005036 potential barrier Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
- 238000005859 coupling reaction Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000012217 deletion Methods 0.000 description 3
- 230000037430 deletion Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 210000002287 horizontal cell Anatomy 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/156—CCD or CID colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56146588A JPS5847378A (ja) | 1981-09-17 | 1981-09-17 | 撮像素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3223860A1 DE3223860A1 (de) | 1983-03-31 |
| DE3223860C2 true DE3223860C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-04-19 |
Family
ID=15411103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823223860 Granted DE3223860A1 (de) | 1981-09-17 | 1982-06-25 | Bildaufnahmevorrichtung |
Country Status (7)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60206168A (ja) * | 1984-03-30 | 1985-10-17 | Fujitsu Ltd | 赤外線電荷結合装置 |
| CA1269446C (en) * | 1984-12-28 | 1990-05-22 | CAMERA | |
| US4995061A (en) * | 1987-12-17 | 1991-02-19 | Texas Instruments Incorporated | Two-phase CCD imager cell for TV interlace operation |
| JPH07114276B2 (ja) * | 1988-06-30 | 1995-12-06 | 日本電気株式会社 | 固体撮像装置 |
| US5047862A (en) * | 1989-10-12 | 1991-09-10 | Eastman Kodak Company | Solid-state imager |
| US5130774A (en) * | 1990-07-12 | 1992-07-14 | Eastman Kodak Company | Antiblooming structure for solid-state image sensor |
| US5402459A (en) * | 1993-05-10 | 1995-03-28 | Texas Instruments Incorporated | Frame transfer image sensor with electronic shutter |
| US5464996A (en) * | 1994-08-29 | 1995-11-07 | Texas Instruments Incorporated | Process tracking bias generator for advanced lateral overflow antiblooming drain |
| JP2910671B2 (ja) * | 1996-05-15 | 1999-06-23 | 日本電気株式会社 | 固体撮像装置 |
| US7082171B1 (en) | 1999-11-24 | 2006-07-25 | Parkervision, Inc. | Phase shifting applications of universal frequency translation |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1106477A (en) * | 1972-07-10 | 1981-08-04 | Carlo H. Sequin | Overflow channel for charge transfer imaging devices |
| US3876952A (en) * | 1973-05-02 | 1975-04-08 | Rca Corp | Signal processing circuits for charge-transfer, image-sensing arrays |
| NL7311600A (nl) * | 1973-08-23 | 1975-02-25 | Philips Nv | Ladingsgekoppelde inrichting. |
| US3896474A (en) * | 1973-09-10 | 1975-07-22 | Fairchild Camera Instr Co | Charge coupled area imaging device with column anti-blooming control |
| JPS5654115B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-03-29 | 1981-12-23 | ||
| US4016550A (en) * | 1975-11-24 | 1977-04-05 | Rca Corporation | Charge transfer readout of charge injection device arrays |
| JPS5827712B2 (ja) * | 1975-12-25 | 1983-06-10 | 株式会社東芝 | コタイサツゾウソウチ |
| US4191895A (en) * | 1976-07-26 | 1980-03-04 | Rca Corporation | Low noise CCD input circuit |
| JPS5451318A (en) * | 1977-09-29 | 1979-04-23 | Sony Corp | Solid pickup unit |
| US4229752A (en) * | 1978-05-16 | 1980-10-21 | Texas Instruments Incorporated | Virtual phase charge transfer device |
| JPS5518064A (en) * | 1978-07-26 | 1980-02-07 | Sony Corp | Charge trsnsfer device |
| JPS6030151B2 (ja) * | 1979-10-19 | 1985-07-15 | 松下電子工業株式会社 | 固体撮像装置 |
| JPS56104582A (en) * | 1980-01-25 | 1981-08-20 | Toshiba Corp | Solid image pickup device |
| JPS5780764A (en) * | 1980-11-10 | 1982-05-20 | Sony Corp | Solid state image pickup element |
-
1981
- 1981-09-17 JP JP56146588A patent/JPS5847378A/ja active Pending
-
1982
- 1982-06-25 DE DE19823223860 patent/DE3223860A1/de active Granted
- 1982-07-07 NL NL8202749A patent/NL190913C/xx not_active IP Right Cessation
- 1982-07-09 GB GB08219947A patent/GB2109631B/en not_active Expired
- 1982-07-23 FR FR8212929A patent/FR2513015B1/fr not_active Expired
- 1982-08-06 CA CA000408908A patent/CA1211564A/en not_active Expired
-
1985
- 1985-05-28 US US06/738,549 patent/US4733406A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5847378A (ja) | 1983-03-19 |
| DE3223860A1 (de) | 1983-03-31 |
| US4733406A (en) | 1988-03-22 |
| NL190913B (nl) | 1994-05-16 |
| GB2109631A (en) | 1983-06-02 |
| GB2109631B (en) | 1986-06-04 |
| CA1211564A (en) | 1986-09-16 |
| FR2513015B1 (fr) | 1986-02-28 |
| NL8202749A (nl) | 1983-04-18 |
| NL190913C (nl) | 1994-10-17 |
| FR2513015A1 (fr) | 1983-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |