DE3200853A1 - Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung - Google Patents

Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung

Info

Publication number
DE3200853A1
DE3200853A1 DE19823200853 DE3200853A DE3200853A1 DE 3200853 A1 DE3200853 A1 DE 3200853A1 DE 19823200853 DE19823200853 DE 19823200853 DE 3200853 A DE3200853 A DE 3200853A DE 3200853 A1 DE3200853 A1 DE 3200853A1
Authority
DE
Germany
Prior art keywords
areas
mosaic
semiconductor
sensitive
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823200853
Other languages
German (de)
English (en)
Other versions
DE3200853C2 (https=
Inventor
Horst Dipl.-Phys. Dr. 7100 Heilbronn Maier
Max Prof. Dr.rer.nat. 8521 Uttenreuth Schulz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19823200853 priority Critical patent/DE3200853A1/de
Priority to GB08300403A priority patent/GB2113467B/en
Priority to FR838300445A priority patent/FR2519803B1/fr
Publication of DE3200853A1 publication Critical patent/DE3200853A1/de
Priority to US06/802,601 priority patent/US4661168A/en
Application granted granted Critical
Publication of DE3200853C2 publication Critical patent/DE3200853C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H10F39/1575—CCD or CID infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/082—Ion implantation FETs/COMs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/094—Laser beam treatment of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE19823200853 1982-01-14 1982-01-14 Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung Granted DE3200853A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19823200853 DE3200853A1 (de) 1982-01-14 1982-01-14 Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung
GB08300403A GB2113467B (en) 1982-01-14 1983-01-07 Infra-red detector
FR838300445A FR2519803B1 (fr) 1982-01-14 1983-01-13 Dispositif semi-conducteur comportant une unite de prise de vue et une unite de lecture, et procede pour sa production
US06/802,601 US4661168A (en) 1982-01-14 1985-11-25 Method of integrating infrared sensitive image recording element with CCD on same substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823200853 DE3200853A1 (de) 1982-01-14 1982-01-14 Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung

Publications (2)

Publication Number Publication Date
DE3200853A1 true DE3200853A1 (de) 1983-07-21
DE3200853C2 DE3200853C2 (https=) 1989-08-17

Family

ID=6153003

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823200853 Granted DE3200853A1 (de) 1982-01-14 1982-01-14 Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung

Country Status (4)

Country Link
US (1) US4661168A (https=)
DE (1) DE3200853A1 (https=)
FR (1) FR2519803B1 (https=)
GB (1) GB2113467B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3333410A1 (de) * 1983-09-15 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Halbleiter-strahlungsdetektor mit waermegedaemmter aufhaengung
DE3622879C2 (de) * 1986-07-08 1997-04-10 Licentia Gmbh Detektoranordnung
US6201242B1 (en) 1987-08-05 2001-03-13 Lockheed Martin Corporation Bandgap radiation detector
US4894701A (en) * 1988-05-09 1990-01-16 General Electric Company Semiconductor device detector and method of forming same
CA2036874A1 (en) * 1991-02-22 2002-07-10 Ltv Aerospace And Defense Company Bandgap radiation detector and method of fabrication
US5449908A (en) * 1993-12-30 1995-09-12 Texas Instruments Incorporated Hybrid CCD imaging
US5652150A (en) * 1995-06-07 1997-07-29 Texas Instruments Incorporated Hybrid CCD imaging
US5773831A (en) * 1997-03-19 1998-06-30 Lockheed Martin Vought Systems Corporation Patch coupled infrared photodetector
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
KR100282424B1 (ko) * 1999-03-18 2001-02-15 김영환 수평전하 전송소자 및 그의 제조방법
US20030102432A1 (en) * 2001-04-12 2003-06-05 Epir Ltd. Monolithic infrared focal plane array detectors
US6657194B2 (en) * 2001-04-13 2003-12-02 Epir Technologies, Inc. Multispectral monolithic infrared focal plane array detectors
US20040109692A1 (en) * 2002-12-09 2004-06-10 James Plante FSO communication systems having high performance detectors
DE10313602B4 (de) * 2003-03-26 2013-05-08 Siemens Aktiengesellschaft Vorrichtung zur Messung einer Strahlungsdosis

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4188709A (en) * 1977-02-07 1980-02-19 Honeywell Inc. Double sided hybrid mosaic focal plane
US4197633A (en) * 1977-09-01 1980-04-15 Honeywell, Inc. Hybrid mosaic IR/CCD focal plane
DE3043913A1 (de) * 1979-11-21 1981-06-11 Hitachi, Ltd., Tokyo Halbleiteranordnung und verfahren zu ihrer herstellung
EP0033414A2 (en) * 1979-12-03 1981-08-12 Katz, Bernard B. High repetition rate, uniform volume transverse electric discharger laser with pulse triggered multi-arc channel switching, and a method of producing solar voltaic cells using a pulsed laser beam
FR2484705A1 (fr) * 1977-12-29 1981-12-18 Thomson Csf Dispositif a image a deux dimensions a l'etat solide, en rayonnement electromagnetique et son procede de fabrication

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808435A (en) * 1973-05-29 1974-04-30 Texas Instruments Inc Infra-red quantum differential detector system
US3883437A (en) * 1974-01-25 1975-05-13 Hughes Aircraft Co Monolithic IR detector arrays with direct injection charge coupled device readout
DE2501934C2 (de) * 1974-01-25 1982-11-11 Hughes Aircraft Co., Culver City, Calif. Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens
US4093957A (en) * 1976-07-15 1978-06-06 The United States Of America As Represented By The Secretary Of The Army SOS extrinsic infrared detector and read-out device
US4286278A (en) * 1977-09-01 1981-08-25 Honeywell Inc. Hybrid mosaic IR/CCD focal plane
US4206470A (en) * 1977-09-01 1980-06-03 Honeywell Inc. Thin film interconnect for multicolor IR/CCD
US4304624A (en) * 1977-11-28 1981-12-08 Irvine Sensors Corporation Method of fabricating a multi-layer structure for detector array module
US4197469A (en) * 1978-05-25 1980-04-08 Rockwell International Corporation Capacitively coupled array of photodetectors
GB2027986B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors
US4377904A (en) * 1978-10-10 1983-03-29 Texas Instruments Incorporated Method of fabricating a narrow band-gap semiconductor CCD imaging device
US4290844A (en) * 1979-02-26 1981-09-22 Carson Alexiou Corporation Focal plane photo-detector mosaic array fabrication
GB2095898B (en) * 1981-03-27 1985-01-09 Philips Electronic Associated Methods of manufacturing a detector device
US4559695A (en) * 1981-03-27 1985-12-24 U.S. Philips Corporation Method of manufacturing an infrared radiation imaging device
US4376659A (en) * 1981-06-01 1983-03-15 Texas Instruments Incorporated Process for forming semiconductor alloys having a desired bandgap

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4188709A (en) * 1977-02-07 1980-02-19 Honeywell Inc. Double sided hybrid mosaic focal plane
US4197633A (en) * 1977-09-01 1980-04-15 Honeywell, Inc. Hybrid mosaic IR/CCD focal plane
FR2484705A1 (fr) * 1977-12-29 1981-12-18 Thomson Csf Dispositif a image a deux dimensions a l'etat solide, en rayonnement electromagnetique et son procede de fabrication
DE3043913A1 (de) * 1979-11-21 1981-06-11 Hitachi, Ltd., Tokyo Halbleiteranordnung und verfahren zu ihrer herstellung
EP0033414A2 (en) * 1979-12-03 1981-08-12 Katz, Bernard B. High repetition rate, uniform volume transverse electric discharger laser with pulse triggered multi-arc channel switching, and a method of producing solar voltaic cells using a pulsed laser beam

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
US-Buch: C.W. While and P. S. Peercy, Laser and Electron Beam Processing of Materials, 1980, S.379-384 *
US-Z: Applied Physics Letters, Bd. 39 (9), 1. November 1981, S.730-732 *
US-Z: IEEE spectrum, April 1981, S.50-54 *
US-Z: Journal of Vacuum Science & Techno- logy, Bd.18 (2), März 1981, S.190-194 *

Also Published As

Publication number Publication date
GB2113467B (en) 1985-10-23
GB2113467A (en) 1983-08-03
DE3200853C2 (https=) 1989-08-17
US4661168A (en) 1987-04-28
FR2519803B1 (fr) 1985-07-26
FR2519803A1 (fr) 1983-07-18
GB8300403D0 (en) 1983-02-09

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT,

8127 New person/name/address of the applicant

Owner name: LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT,

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee