DE3176520D1 - Method for producing a single crystal - Google Patents

Method for producing a single crystal

Info

Publication number
DE3176520D1
DE3176520D1 DE8181305589T DE3176520T DE3176520D1 DE 3176520 D1 DE3176520 D1 DE 3176520D1 DE 8181305589 T DE8181305589 T DE 8181305589T DE 3176520 T DE3176520 T DE 3176520T DE 3176520 D1 DE3176520 D1 DE 3176520D1
Authority
DE
Germany
Prior art keywords
producing
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181305589T
Other languages
German (de)
English (en)
Inventor
Soichiro Matsuzawa
Syunzo Mase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE3176520D1 publication Critical patent/DE3176520D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8181305589T 1980-11-28 1981-11-26 Method for producing a single crystal Expired DE3176520D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55166645A JPS5792591A (en) 1980-11-28 1980-11-28 Production of single crystal

Publications (1)

Publication Number Publication Date
DE3176520D1 true DE3176520D1 (en) 1987-12-17

Family

ID=15835103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181305589T Expired DE3176520D1 (en) 1980-11-28 1981-11-26 Method for producing a single crystal

Country Status (4)

Country Link
US (1) US4444615A (enExample)
EP (1) EP0053481B1 (enExample)
JP (1) JPS5792591A (enExample)
DE (1) DE3176520D1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58172286A (ja) * 1982-04-02 1983-10-11 Matsushita Electric Ind Co Ltd 酸化物単結晶体の製造法
JPS60138708A (ja) * 1983-12-27 1985-07-23 Ngk Insulators Ltd 磁気ヘッド用コアの製造法
EP0211187A3 (en) * 1985-06-28 1989-01-11 Kabushiki Kaisha Toshiba Process for producing single crystal of garnet ferrite
JPH03215391A (ja) * 1989-06-26 1991-09-20 Canon Inc 結晶の成長方法
KR0157323B1 (ko) * 1991-12-31 1999-02-18 황선두 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치
US5427051A (en) * 1993-05-21 1995-06-27 General Electric Company Solid state formation of sapphire using a localized energy source
US5540182A (en) * 1993-09-24 1996-07-30 General Electric Company Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography
US5451553A (en) * 1993-09-24 1995-09-19 General Electric Company Solid state thermal conversion of polycrystalline alumina to sapphire
JP3216683B2 (ja) * 1993-10-08 2001-10-09 宇部興産株式会社 セラミックス複合材料
US5487353A (en) * 1994-02-14 1996-01-30 General Electric Company Conversion of doped polycrystalline material to single crystal
JP2001110635A (ja) * 1999-10-04 2001-04-20 Minebea Co Ltd 磁気光学体及びその製造方法
JPWO2002022920A1 (ja) * 2000-09-18 2004-02-05 第一稀元素化学工業株式会社 希土類−鉄ガーネット単結晶体及びその製造方法
WO2006054628A1 (ja) * 2004-11-19 2006-05-26 Tdk Corporation 磁性ガーネット単結晶及びそれを用いた光学素子並びに単結晶の製造方法
US7695562B2 (en) * 2006-01-10 2010-04-13 Tdk Corporation Magnetic garnet single crystal and method for producing the same as well as optical element using the same
JP4720730B2 (ja) * 2006-01-27 2011-07-13 Ｔｄｋ株式会社 光学素子の製造方法
JP4702090B2 (ja) * 2006-02-20 2011-06-15 Ｔｄｋ株式会社 磁性ガーネット単結晶及びそれを用いた光学素子
US7758766B2 (en) * 2007-09-17 2010-07-20 Tdk Corporation Magnetic garnet single crystal and Faraday rotator using the same
FR2943340B1 (fr) * 2009-03-18 2011-04-22 Centre Nat Rech Scient Procede de preparation d'une couche mince de thiospinelles
US20230340693A1 (en) * 2019-10-21 2023-10-26 Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) Single-crystal metal film by solid-state crystal growth of seed crystals, large-area single-layer or multilayer graphene with adjusted orientation angle using same, and method for manufacturing same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL290591A (enExample) * 1962-03-29 1900-01-01
US3278273A (en) * 1962-12-28 1966-10-11 Robert J Fischer Single crystal barium titanate
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
GB1393337A (en) * 1972-12-29 1975-05-07 Ibm Method of growing a single crystal film
US3849205A (en) * 1973-08-27 1974-11-19 Texas Instruments Inc Enhancement of solid state recrystallization by induced nucleation
DE2921214A1 (de) * 1979-05-25 1980-12-04 Bosch Gmbh Robert Verfahren zur fahrgeschwindigkeitsregelung und fahrgeschwindigkeitsregler
JPS55162496A (en) * 1979-05-31 1980-12-17 Ngk Insulators Ltd Manufacture of single crystal
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
JPS56155100A (en) * 1980-05-02 1981-12-01 Ngk Insulators Ltd Production of single crystal of ferrite
ZA851625B (en) * 1984-03-06 1986-10-29 Lilly Co Eli Vectors for expressing boving growth hormone derivatives

Also Published As

Publication number Publication date
US4444615A (en) 1984-04-24
JPS5792591A (en) 1982-06-09
EP0053481B1 (en) 1987-11-11
JPS6240320B2 (enExample) 1987-08-27
EP0053481A1 (en) 1982-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition