DE3175704D1 - Implantation of vaporized material on melted substrates - Google Patents

Implantation of vaporized material on melted substrates

Info

Publication number
DE3175704D1
DE3175704D1 DE8181901270T DE3175704T DE3175704D1 DE 3175704 D1 DE3175704 D1 DE 3175704D1 DE 8181901270 T DE8181901270 T DE 8181901270T DE 3175704 T DE3175704 T DE 3175704T DE 3175704 D1 DE3175704 D1 DE 3175704D1
Authority
DE
Germany
Prior art keywords
implantation
vaporized material
melted
substrates
melted substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181901270T
Other languages
English (en)
Inventor
William Thomas Silfvast
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE3175704D1 publication Critical patent/DE3175704D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE8181901270T 1980-05-12 1981-05-01 Implantation of vaporized material on melted substrates Expired DE3175704D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/149,234 US4281030A (en) 1980-05-12 1980-05-12 Implantation of vaporized material on melted substrates
PCT/US1981/000582 WO1981003344A1 (en) 1980-05-12 1981-05-01 Implantation of vaporized material on melted substrates

Publications (1)

Publication Number Publication Date
DE3175704D1 true DE3175704D1 (en) 1987-01-22

Family

ID=22529334

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181901270T Expired DE3175704D1 (en) 1980-05-12 1981-05-01 Implantation of vaporized material on melted substrates

Country Status (8)

Country Link
US (1) US4281030A (de)
EP (1) EP0051639B1 (de)
JP (1) JPH0345531B2 (de)
CA (1) CA1150668A (de)
DE (1) DE3175704D1 (de)
GB (1) GB2075555B (de)
IT (1) IT1136992B (de)
WO (1) WO1981003344A1 (de)

Families Citing this family (49)

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US4579750A (en) * 1980-07-07 1986-04-01 Massachusetts Institute Of Technology Laser heated CVD process
US4348263A (en) * 1980-09-12 1982-09-07 Western Electric Company, Inc. Surface melting of a substrate prior to plating
US4701592A (en) * 1980-11-17 1987-10-20 Rockwell International Corporation Laser assisted deposition and annealing
DE3122341A1 (de) * 1981-06-05 1982-12-23 Chemische Werke Hüls AG, 4370 Marl Feinteilige expandierbare styrolpolymerisate
US4394237A (en) * 1981-07-17 1983-07-19 Bell Telephone Laboratories, Incorporated Spectroscopic monitoring of gas-solid processes
JPS5864368A (ja) * 1981-10-12 1983-04-16 Inoue Japax Res Inc 化学メツキ方法
GB2114809B (en) * 1982-02-04 1986-02-05 Standard Telephones Cables Ltd Metallic silicide production
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JPS5949508A (ja) * 1982-09-14 1984-03-22 Sony Corp 複屈折板の製造方法
US4576697A (en) * 1983-04-21 1986-03-18 Combustion Engineering, Inc. Synthesis of carbon-containing intercalatable layered transition metal chalocogenides
DE3472574D1 (en) * 1983-10-14 1988-08-11 Hitachi Ltd Process for forming an organic thin film
US4496607A (en) * 1984-01-27 1985-01-29 W. R. Grace & Co. Laser process for producing electrically conductive surfaces on insulators
GB2155042B (en) * 1984-02-21 1987-12-31 Hughes Technology Pty Ltd Laser induced ion beam generator
AU589892B2 (en) * 1984-02-21 1989-10-26 Laser Holdings Limited Laser substrate coater & tracker layer
GB8417040D0 (en) * 1984-07-04 1984-08-08 Salford University Of Modifying properties of material
DE3426201A1 (de) * 1984-07-17 1986-01-23 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Verfahren zum aufbringen von schutzschichten
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
IT1179061B (it) * 1984-08-20 1987-09-16 Fiat Auto Spa Procedimento per l'effettuazione di un trattamento su pezzi metallici con l'aggiunta di un materiale d'apporto e con l'impiego di un laser di potenza
FR2578095B1 (fr) * 1985-02-28 1988-04-15 Avitaya Francois D Procede et dispositif de depot par croissance epitaxiale d'un materiau dope
US4631197A (en) * 1985-07-17 1986-12-23 Motorola, Inc. Apparatus and method for adjusting the frequency of a resonator by laser
US4664935A (en) * 1985-09-24 1987-05-12 Machine Technology, Inc. Thin film deposition apparatus and method
US5064681A (en) * 1986-08-21 1991-11-12 International Business Machines Corporation Selective deposition process for physical vapor deposition
JPS63227766A (ja) * 1986-10-27 1988-09-22 Hitachi Ltd 超微粒子膜の形成方法
US4740386A (en) * 1987-03-30 1988-04-26 Rockwell International Corporation Method for depositing a ternary compound having a compositional profile
USH872H (en) * 1987-09-15 1991-01-01 The United States Of America As Represented By The Department Of Energy Method of applying coatings to substrates
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
US5411797A (en) * 1988-04-18 1995-05-02 Board Of Regents, The University Of Texas System Nanophase diamond films
SE463213B (sv) * 1988-05-06 1990-10-22 Ibm Svenska Ab Anordning och foerfarande foer att foerse ett metallsubstrat med en stoetbestaendig yta
DE3914476C1 (de) * 1989-05-02 1990-06-21 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
JPH03104861A (ja) * 1989-05-26 1991-05-01 Rockwell Internatl Corp レーザアブレーションに使用するための装置
JPH0323238A (ja) * 1989-06-19 1991-01-31 Nippon Sheet Glass Co Ltd ガラス基材の表面改質法
JP2559492B2 (ja) * 1989-07-05 1996-12-04 シャープ株式会社 化合物半導体発光素子の製造方法
DE69028662T2 (de) * 1989-07-06 1997-03-06 Toyoda Chuo Kenkyusho Kk Verfahren und Vorrichtung zum Laseraufdampfen
DE3925085C1 (de) * 1989-07-28 1991-01-10 Battelle-Institut Ev, 6000 Frankfurt, De
DE4022817C1 (de) * 1990-07-18 1991-11-07 Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt Ev, 5300 Bonn, De
CA2065581C (en) 1991-04-22 2002-03-12 Andal Corp. Plasma enhancement apparatus and method for physical vapor deposition
US5368947A (en) * 1991-08-12 1994-11-29 The Penn State Research Foundation Method of producing a slip-resistant substrate by depositing raised, bead-like configurations of a compatible material at select locations thereon, and a substrate including same
US5227204A (en) * 1991-08-27 1993-07-13 Northeastern University Fabrication of ferrite films using laser deposition
IT1250211B (it) * 1991-11-22 1995-04-03 Fiat Auto Spa Procedimento per il trattamento superficiale a mezzo laser di metalli da rivestire.
DE4204650C1 (de) * 1992-02-15 1993-07-08 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US5320882A (en) * 1992-04-22 1994-06-14 General Electric Company Laser ablative particulate composite
US5405659A (en) * 1993-03-05 1995-04-11 University Of Puerto Rico Method and apparatus for removing material from a target by use of a ring-shaped elliptical laser beam and depositing the material onto a substrate
US5432313A (en) * 1993-06-23 1995-07-11 The United States Of America As Represented By The Secretary Of The Army Target configurations for increasing the size of films prepared by laser ablation
US5849371A (en) * 1996-07-22 1998-12-15 Beesley; Dwayne Laser and laser-assisted free electron beam deposition apparatus and method
US6562705B1 (en) * 1999-10-26 2003-05-13 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing semiconductor element
US7635656B2 (en) * 2006-06-29 2009-12-22 International Business Machines Corporation Serial irradiation of a substrate by multiple radiation sources
US7790636B2 (en) * 2006-06-29 2010-09-07 International Business Machines Corporation Simultaneous irradiation of a substrate by multiple radiation sources
US8076607B2 (en) * 2007-06-27 2011-12-13 Ross Technology Corporation Method and apparatus for depositing raised features at select locations on a substrate to produce a slip-resistant surface
GB201202128D0 (en) * 2012-02-08 2012-03-21 Univ Leeds Novel material

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1493822A (fr) * 1966-08-30 1967-09-01 Temescal Metallurgical Corp Article résistant à l'abrasion et son procédé de fabrication
GB1252254A (de) * 1967-11-02 1971-11-03
US3560252A (en) * 1968-08-13 1971-02-02 Air Reduction Vapor deposition method including specified solid angle of radiant heater
JPS5235596B2 (de) * 1973-02-23 1977-09-09
CA1035675A (en) * 1974-01-07 1978-08-01 Avco Everett Research Laboratory Formation of surface layer casings on articles
US4108751A (en) * 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device
DE2820289C2 (de) * 1978-05-10 1986-09-18 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum Beschichten von metallischen Substraten mit Legierungsschichten bei erhöhter Substrattemperatur
FR2475069A1 (fr) * 1980-02-01 1981-08-07 Commissariat Energie Atomique Procede de dopage rapide de semi-conducteurs

Also Published As

Publication number Publication date
JPS57500492A (de) 1982-03-18
CA1150668A (en) 1983-07-26
EP0051639B1 (de) 1986-12-10
US4281030A (en) 1981-07-28
GB2075555B (en) 1984-04-04
IT1136992B (it) 1986-09-03
GB2075555A (en) 1981-11-18
EP0051639A4 (de) 1982-11-25
IT8121601A0 (it) 1981-05-08
JPH0345531B2 (de) 1991-07-11
EP0051639A1 (de) 1982-05-19
WO1981003344A1 (en) 1981-11-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee