DE3175419D1 - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
DE3175419D1
DE3175419D1 DE8181108551T DE3175419T DE3175419D1 DE 3175419 D1 DE3175419 D1 DE 3175419D1 DE 8181108551 T DE8181108551 T DE 8181108551T DE 3175419 T DE3175419 T DE 3175419T DE 3175419 D1 DE3175419 D1 DE 3175419D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181108551T
Other languages
English (en)
Inventor
Gary Douglas Grise
Ning Hsieh
Howard Leo Kalter
Chung Hon Lam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3175419D1 publication Critical patent/DE3175419D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
DE8181108551T 1981-01-02 1981-10-20 Semiconductor memory Expired DE3175419D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/221,958 US4375085A (en) 1981-01-02 1981-01-02 Dense electrically alterable read only memory

Publications (1)

Publication Number Publication Date
DE3175419D1 true DE3175419D1 (en) 1986-11-06

Family

ID=22830157

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181108551T Expired DE3175419D1 (en) 1981-01-02 1981-10-20 Semiconductor memory

Country Status (4)

Country Link
US (1) US4375085A (de)
EP (1) EP0055803B1 (de)
JP (1) JPS57113485A (de)
DE (1) DE3175419D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0056195B1 (de) * 1980-12-25 1986-06-18 Fujitsu Limited Nichtflüchtiger Halbleiterspeicher
JPS6180866A (ja) * 1984-09-27 1986-04-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 不揮発性半導体メモリ・セル
US4729115A (en) * 1984-09-27 1988-03-01 International Business Machines Corporation Non-volatile dynamic random access memory cell
US4665417A (en) * 1984-09-27 1987-05-12 International Business Machines Corporation Non-volatile dynamic random access memory cell
JPS6365674A (ja) * 1986-09-05 1988-03-24 Agency Of Ind Science & Technol 半導体不揮発性ｒａｍ
EP0429720A1 (de) * 1989-12-01 1991-06-05 Koninklijke Philips Electronics N.V. Eintransistor-EEPROM-Zelle
JPH04178987A (ja) * 1990-11-14 1992-06-25 Matsushita Electric Ind Co Ltd 磁気記録再生装置
JPH0737996A (ja) * 1993-07-26 1995-02-07 Mitsubishi Electric Corp メモリセルにトランジスタを用いない半導体記憶装置およびその製造方法
US6713810B1 (en) * 2003-02-10 2004-03-30 Micron Technology, Inc. Non-volatile devices, and electronic systems comprising non-volatile devices
US7092288B2 (en) * 2004-02-04 2006-08-15 Atmel Corporation Non-volatile memory array with simultaneous write and erase feature
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US160530A (en) * 1875-03-09 Joseph lessler
US124003A (en) * 1872-02-27 Improvement in water-closets
US200851A (en) * 1878-03-05 Improvement in reed-organs
US153359A (en) * 1874-07-21 Improvement in treadles
US3911464A (en) * 1973-05-29 1975-10-07 Ibm Nonvolatile semiconductor memory
US3914855A (en) * 1974-05-09 1975-10-28 Bell Telephone Labor Inc Methods for making MOS read-only memories
DE2450116C2 (de) * 1974-10-22 1976-09-16 Siemens AG, 1000 Berlin und 8000 München Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb
US4161039A (en) * 1976-12-15 1979-07-10 Siemens Aktiengesellschaft N-Channel storage FET
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
JPS6026303B2 (ja) * 1977-07-08 1985-06-22 株式会社日立製作所 半導体不揮発性記憶装置
DE2842545C2 (de) * 1978-09-29 1980-07-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterspeicher mit Depletion-Varaktoren als Speicherkondensatoren
EP0024732A3 (de) * 1979-08-31 1983-01-12 Siemens Aktiengesellschaft Monolithische statische Speicherzelle, Verfahren zu ihrer Herstellung und Verfahren zu ihrem Betrieb

Also Published As

Publication number Publication date
EP0055803A3 (en) 1983-11-09
EP0055803B1 (de) 1986-10-01
JPS6322626B2 (de) 1988-05-12
JPS57113485A (en) 1982-07-14
US4375085A (en) 1983-02-22
EP0055803A2 (de) 1982-07-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee