JPS57113485A - Memory - Google Patents

Memory

Info

Publication number
JPS57113485A
JPS57113485A JP18388481A JP18388481A JPS57113485A JP S57113485 A JPS57113485 A JP S57113485A JP 18388481 A JP18388481 A JP 18388481A JP 18388481 A JP18388481 A JP 18388481A JP S57113485 A JPS57113485 A JP S57113485A
Authority
JP
Japan
Prior art keywords
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18388481A
Other languages
English (en)
Other versions
JPS6322626B2 (ja
Inventor
Hon Ramu Chiyan
Dagurasu Guraisu Geirii
Shiyuu Ningu
Reo Karutaa Hawaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS57113485A publication Critical patent/JPS57113485A/ja
Publication of JPS6322626B2 publication Critical patent/JPS6322626B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
JP18388481A 1981-01-02 1981-11-18 Memory Granted JPS57113485A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/221,958 US4375085A (en) 1981-01-02 1981-01-02 Dense electrically alterable read only memory

Publications (2)

Publication Number Publication Date
JPS57113485A true JPS57113485A (en) 1982-07-14
JPS6322626B2 JPS6322626B2 (ja) 1988-05-12

Family

ID=22830157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18388481A Granted JPS57113485A (en) 1981-01-02 1981-11-18 Memory

Country Status (4)

Country Link
US (1) US4375085A (ja)
EP (1) EP0055803B1 (ja)
JP (1) JPS57113485A (ja)
DE (1) DE3175419D1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0056195B1 (en) * 1980-12-25 1986-06-18 Fujitsu Limited Nonvolatile semiconductor memory device
US4665417A (en) * 1984-09-27 1987-05-12 International Business Machines Corporation Non-volatile dynamic random access memory cell
US4729115A (en) * 1984-09-27 1988-03-01 International Business Machines Corporation Non-volatile dynamic random access memory cell
JPS6180866A (ja) * 1984-09-27 1986-04-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 不揮発性半導体メモリ・セル
JPS6365674A (ja) * 1986-09-05 1988-03-24 Agency Of Ind Science & Technol 半導体不揮発性ｒａｍ
EP0429720A1 (en) * 1989-12-01 1991-06-05 Koninklijke Philips Electronics N.V. Single-transistor-EEPROM-cell
JPH04178987A (ja) * 1990-11-14 1992-06-25 Matsushita Electric Ind Co Ltd 磁気記録再生装置
JPH0737996A (ja) * 1993-07-26 1995-02-07 Mitsubishi Electric Corp メモリセルにトランジスタを用いない半導体記憶装置およびその製造方法
US6713810B1 (en) * 2003-02-10 2004-03-30 Micron Technology, Inc. Non-volatile devices, and electronic systems comprising non-volatile devices
US7092288B2 (en) * 2004-02-04 2006-08-15 Atmel Corporation Non-volatile memory array with simultaneous write and erase feature
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416986A (en) * 1977-07-08 1979-02-07 Hitachi Ltd Semiconductor non-volatile memory device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US200851A (en) * 1878-03-05 Improvement in reed-organs
US160530A (en) * 1875-03-09 Joseph lessler
US153359A (en) * 1874-07-21 Improvement in treadles
US124003A (en) * 1872-02-27 Improvement in water-closets
US3911464A (en) * 1973-05-29 1975-10-07 Ibm Nonvolatile semiconductor memory
US3914855A (en) * 1974-05-09 1975-10-28 Bell Telephone Labor Inc Methods for making MOS read-only memories
DE2450116C2 (de) * 1974-10-22 1976-09-16 Siemens AG, 1000 Berlin und 8000 München Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb
US4161039A (en) * 1976-12-15 1979-07-10 Siemens Aktiengesellschaft N-Channel storage FET
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
DE2842545C2 (de) * 1978-09-29 1980-07-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterspeicher mit Depletion-Varaktoren als Speicherkondensatoren
EP0024732A3 (de) * 1979-08-31 1983-01-12 Siemens Aktiengesellschaft Monolithische statische Speicherzelle, Verfahren zu ihrer Herstellung und Verfahren zu ihrem Betrieb

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416986A (en) * 1977-07-08 1979-02-07 Hitachi Ltd Semiconductor non-volatile memory device

Also Published As

Publication number Publication date
EP0055803A3 (en) 1983-11-09
US4375085A (en) 1983-02-22
EP0055803B1 (en) 1986-10-01
DE3175419D1 (en) 1986-11-06
EP0055803A2 (en) 1982-07-14
JPS6322626B2 (ja) 1988-05-12

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