DE3166074D1 - Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film - Google Patents

Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film

Info

Publication number
DE3166074D1
DE3166074D1 DE8181109159T DE3166074T DE3166074D1 DE 3166074 D1 DE3166074 D1 DE 3166074D1 DE 8181109159 T DE8181109159 T DE 8181109159T DE 3166074 T DE3166074 T DE 3166074T DE 3166074 D1 DE3166074 D1 DE 3166074D1
Authority
DE
Germany
Prior art keywords
film
conductivity
improving
semiconductor device
tungsten silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181109159T
Other languages
German (de)
English (en)
Inventor
Robert James Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3166074D1 publication Critical patent/DE3166074D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters
DE8181109159T 1980-12-08 1981-10-29 Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film Expired DE3166074D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/214,170 US4322453A (en) 1980-12-08 1980-12-08 Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering

Publications (1)

Publication Number Publication Date
DE3166074D1 true DE3166074D1 (en) 1984-10-18

Family

ID=22798043

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181109159T Expired DE3166074D1 (en) 1980-12-08 1981-10-29 Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film

Country Status (4)

Country Link
US (1) US4322453A (enExample)
EP (1) EP0053712B1 (enExample)
JP (1) JPS5797651A (enExample)
DE (1) DE3166074D1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4424101A (en) 1980-11-06 1984-01-03 The Perkin-Elmer Corp. Method of depositing doped refractory metal silicides using DC magnetron/RF diode mode co-sputtering techniques
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US4700215A (en) * 1981-11-19 1987-10-13 Texas Instruments Incorporated Polycide electrodes for integrated circuits
US4816425A (en) * 1981-11-19 1989-03-28 Texas Instruments Incorporated Polycide process for integrated circuits
GB2114809B (en) * 1982-02-04 1986-02-05 Standard Telephones Cables Ltd Metallic silicide production
JPS59110179A (ja) * 1982-12-16 1984-06-26 Hitachi Ltd 半導体装置およびその製造法
JPS59154040A (ja) * 1983-02-22 1984-09-03 Toshiba Corp 半導体装置の製造方法
US4529619A (en) * 1984-07-16 1985-07-16 Xerox Corporation Ohmic contacts for hydrogenated amorphous silicon
US4526665A (en) * 1984-08-20 1985-07-02 Gould Inc. Method of depositing fully reacted titanium disilicide thin films
US4751198A (en) * 1985-09-11 1988-06-14 Texas Instruments Incorporated Process for making contacts and interconnections using direct-reacted silicide
US4737474A (en) * 1986-11-17 1988-04-12 Spectrum Cvd, Inc. Silicide to silicon bonding process
GB8629409D0 (en) * 1986-12-09 1987-01-21 Evans B L Multilayered structures
JPS6489470A (en) * 1987-09-30 1989-04-03 Mitsubishi Electric Corp Manufacture of semiconductor device
EP0704883A3 (en) * 1988-02-11 1997-07-09 Sgs Thomson Microelectronics Melting metal silicide encapsulation to protect multilayered polyicides
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
US4992152A (en) * 1989-04-20 1991-02-12 Eastman Kodak Company Reducing hillocking in aluminum layers formed on substrates
US4925812A (en) * 1989-09-21 1990-05-15 International Rectifier Corporation Platinum diffusion process
AT399419B (de) * 1989-09-21 1995-05-26 Int Rectifier Corp Verfahren zur einführung von platinatomen in eine siliziumscheibe zur verringerung der minoritätsträger-lebensdauer
US5093274A (en) * 1990-02-02 1992-03-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacture thereof
JPH05206394A (ja) * 1992-01-24 1993-08-13 Mitsubishi Electric Corp 電界効果トランジスタおよびその製造方法
JP2677168B2 (ja) * 1993-09-17 1997-11-17 日本電気株式会社 半導体装置の製造方法
US5624869A (en) * 1994-04-13 1997-04-29 International Business Machines Corporation Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen
US5849629A (en) * 1995-10-31 1998-12-15 International Business Machines Corporation Method of forming a low stress polycide conductors on a semiconductor chip
US6187617B1 (en) 1999-07-29 2001-02-13 International Business Machines Corporation Semiconductor structure having heterogeneous silicide regions and method for forming same
US6351578B1 (en) * 1999-08-06 2002-02-26 Gemfire Corporation Thermo-optic switch having fast rise-time
US6294435B1 (en) 1999-10-08 2001-09-25 Vanguard International Semiconductor Corporation Method of reducing word line resistance and contact resistance
DE102004039967B4 (de) 2004-08-18 2006-10-12 Gkn Driveline International Gmbh Verfahren zum Rückwärtsfließpressen von Innenprofilen
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier
CN118518641B (zh) * 2024-07-22 2024-11-22 中国计量大学 一种基于表面等离子体共振的Pt-WO3薄膜氢气传感器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB989469A (en) * 1962-02-15 1965-04-22 Gen Electric Formation of corrosion resistant silicide coatings on metal compositions
DE1521529C3 (de) * 1965-06-15 1974-11-28 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur Herstellung von feinen Strukturen auf einem Substrat
US3614547A (en) * 1970-03-16 1971-10-19 Gen Electric Tungsten barrier electrical connection
CA1004964A (en) * 1972-05-30 1977-02-08 Union Carbide Corporation Corrosion resistant coatings and process for making the same
GB1583835A (en) * 1977-03-28 1981-02-04 Avco Everett Res Lab Inc Metal surface modification
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
US4218291A (en) * 1978-02-28 1980-08-19 Vlsi Technology Research Association Process for forming metal and metal silicide films
US4191565A (en) * 1978-06-15 1980-03-04 Eutectic Corporation Flame spray powder mix
SU737498A1 (ru) * 1978-11-10 1980-06-02 Белорусский Ордена Трудового Красного Знамени Политехнический Институт Состав дл вольфрамосилицировани стальных изделий

Also Published As

Publication number Publication date
JPS5797651A (en) 1982-06-17
EP0053712A1 (en) 1982-06-16
EP0053712B1 (en) 1984-09-12
JPS634703B2 (enExample) 1988-01-30
US4322453A (en) 1982-03-30

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee