DE3165007D1 - Buried heterostructure laser diode and method for making the same - Google Patents

Buried heterostructure laser diode and method for making the same

Info

Publication number
DE3165007D1
DE3165007D1 DE8181102910T DE3165007T DE3165007D1 DE 3165007 D1 DE3165007 D1 DE 3165007D1 DE 8181102910 T DE8181102910 T DE 8181102910T DE 3165007 T DE3165007 T DE 3165007T DE 3165007 D1 DE3165007 D1 DE 3165007D1
Authority
DE
Germany
Prior art keywords
making
same
laser diode
buried heterostructure
heterostructure laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181102910T
Other languages
English (en)
Inventor
Ikuo Mito
Mitsuhiro Kitamura
Kazuhisa Kaede
Kohroh Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4866580A external-priority patent/JPS56146288A/ja
Priority claimed from JP6167180A external-priority patent/JPS56158495A/ja
Priority claimed from JP12326180A external-priority patent/JPS5748286A/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3165007D1 publication Critical patent/DE3165007D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
DE8181102910T 1980-04-15 1981-04-15 Buried heterostructure laser diode and method for making the same Expired DE3165007D1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4866580A JPS56146288A (en) 1980-04-15 1980-04-15 Manufacture of semiconductor light emitting device
JP6167180A JPS56158495A (en) 1980-05-12 1980-05-12 Manufacture of semiconductor light emitting device
JP12326180A JPS5748286A (en) 1980-09-05 1980-09-05 Manufacture of buried hetero structured semiconductor laser

Publications (1)

Publication Number Publication Date
DE3165007D1 true DE3165007D1 (en) 1984-08-30

Family

ID=27293373

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181102910T Expired DE3165007D1 (en) 1980-04-15 1981-04-15 Buried heterostructure laser diode and method for making the same

Country Status (3)

Country Link
US (1) US4425650A (de)
EP (1) EP0038085B1 (de)
DE (1) DE3165007D1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3105786A1 (de) * 1981-02-17 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche
EP0083697B1 (de) * 1981-10-19 1987-09-09 Nec Corporation Zweikanaliger Planar-vergrabene-Heterostruktur-Laser
GB2114808B (en) * 1981-12-01 1985-10-09 Standard Telephones Cables Ltd Semiconductor laser manufacture
CA1196078A (en) * 1981-12-07 1985-10-29 Masafumi Seki Double channel planar buried heterostructure laser with periodic structure formed in guide layer
JPS5957486A (ja) * 1982-09-27 1984-04-03 Nec Corp 埋め込み形半導体レ−ザ
JPS6050983A (ja) * 1983-08-30 1985-03-22 Sharp Corp 半導体レ−ザ素子の製造方法
US4675058A (en) * 1983-12-14 1987-06-23 Honeywell Inc. Method of manufacturing a high-bandwidth, high radiance, surface emitting LED
US4860296A (en) * 1983-12-30 1989-08-22 American Telephone And Telegraph Company, At&T Bell Laboratories Laser controlled by a multiple-layer heterostructure
JPS60154689A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 発光素子およびこれを用いた光通信装置
GB2154059B (en) * 1984-01-25 1987-10-28 Hitachi Ltd Light emitting chip and communication apparatus using the same
DE3421215A1 (de) * 1984-06-07 1985-12-12 Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt Verfahren zur erzeugung von ingaasp und ingaas - doppelheterostrukturlasern und -led's mittels fluessigphasenepitaxie fuer einen wellenlaengenbereich von (lambda) = 1,2 (my)m bis 1,7 (my)m
JPS6174388A (ja) * 1984-09-19 1986-04-16 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
JPS61160989A (ja) * 1985-01-09 1986-07-21 Nec Corp 半導体レ−ザアレイ装置とその製造方法
JPS61163689A (ja) * 1985-01-14 1986-07-24 Sharp Corp 半導体装置の製造方法
GB8516853D0 (en) * 1985-07-03 1985-08-07 British Telecomm Manufacture of semiconductor structures
US4905057A (en) * 1985-12-18 1990-02-27 Hitachi, Ltd. Semiconductor devices
JPS62202584A (ja) * 1986-02-28 1987-09-07 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
US4731791A (en) * 1986-05-30 1988-03-15 Lytel Incorporated Buried hetero-structure laser diode
US4779282A (en) * 1987-10-05 1988-10-18 Hughes Aircraft Company Low leakage current GaInAsP/InP buried heterostructure laser and method of fabrication
DE3739408A1 (de) * 1987-11-20 1989-06-01 Siemens Ag Laserchipaufbau
JPH03151684A (ja) * 1989-11-08 1991-06-27 Mitsubishi Electric Corp 多波長集積化半導体レーザの製造方法
US5214662A (en) * 1990-11-16 1993-05-25 Furukawa Electric Co., Ltd. Semiconductor optical devices with pn current blocking layers of wide-band gap materials
US5515393A (en) * 1992-01-29 1996-05-07 Sony Corporation Semiconductor laser with ZnMgSSe cladding layers
US5386428A (en) * 1993-11-02 1995-01-31 Xerox Corporation Stacked active region laser array for multicolor emissions
SE9700931D0 (sv) * 1997-03-14 1997-03-14 Ericsson Telefon Ab L M Buried heterostructure laser
US6556605B1 (en) * 2000-02-29 2003-04-29 Triquent Technology Holding, Co. Method and device for preventing zinc/iron interaction in a semiconductor laser
DE60136261D1 (de) * 2001-01-18 2008-12-04 Avago Tech Fiber Ip Sg Pte Ltd Halbleiterbauelement mit Strombegrenzungstruktur
JP2003309330A (ja) 2002-04-12 2003-10-31 Sumitomo Electric Ind Ltd 半導体光素子
JP2007053242A (ja) * 2005-08-18 2007-03-01 Fuji Xerox Co Ltd 半導体レーザ装置およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device

Also Published As

Publication number Publication date
EP0038085B1 (de) 1984-07-25
US4425650A (en) 1984-01-10
EP0038085A1 (de) 1981-10-21

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee